丝印代码：2425C；PRECISION VIRTUAL GROUND

2.5-V Virtual Ground for 5-V/GND Analog Systems High Output-Current Capability Sink or Source . . . 20 mA Typ Micropower Operation . . . 170 μA Typ Excellent Regulation Characteristics − Output Regulation −45 μV Typ at IO = 0 to −10 mA +15 μV Typ at IO = 0 to +10 mA − Input Regulation = 1

PRECISION VIRTUAL GROUND

文件：451.97 Kbytes Page：22 Pages

封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：管件 描述：IC VREF GND REF 0.8% TO92-3 集成电路（IC） 电压基准

PRECISION VIRTUAL GROUND

文件：451.97 Kbytes Page：22 Pages

丝印代码：2425C；PRECISION VIRTUAL GROUND

2.5-V Virtual Ground for 5-V/GND Analog Systems High Output-Current Capability Sink or Source . . . 20 mA Typ Micropower Operation . . . 170 μA Typ Excellent Regulation Characteristics − Output Regulation −45 μV Typ at IO = 0 to −10 mA +15 μV Typ at IO = 0 to +10 mA − Input Regulation = 1

PRECISION VIRTUAL GROUND

文件：451.97 Kbytes Page：22 Pages

PRECISION VIRTUAL GROUND

文件：451.97 Kbytes Page：22 Pages

SPEECH NETWORK WITH DIALER INTERFACE

INTRODUCTION The KA2425A is telephone speech network integrated circuit which includes transmit amp, receive amp, side tone amp, DC loop interface function, DTMF input, voltage regulator for speech, a regulated output voltage for a dialer, and equalization circuit . FEATURES • Low voltage opera

SPEECH NETWORK WITH DIALER INTERFACE

INTRODUCTION The KA2425A is telephone speech network integrated circuit which includes transmit amp, receive amp, side tone amp, DC loop interface function, DTMF input, voltage regulator for speech, a regulated output voltage for a dialer, and equalization circuit . FEATURES • Low voltage opera

4-PORT TRANSFER SWITCH

Product Description The RF2425 is a very low-cost single-throw, double-pole GaAs MESFET switch. There are two bidirectional input/output channels which can be turned off or on by a single logic control line. Two of the ports may be tied together externally to make a transmit/receive switch. The d

N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the

N-Channel Enhancement-Mode Vertical DMOS FETs

Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the