Advanced LinCMOS RAIL-TO-RAIL OPERATIONAL AMPLIFIERS

Output Swing includes Both Supply Rails Low Noise . . . 12 nV/√Hz Typ at f = 1 kHz Low Input Bias Current . . . 1 pA Typ Fully Specified for Both Single-Supply and Split-Supply Operation Low Power . . . 500 μA Max Common-Mode Input Voltage Range Includes Negative Rail Low Input Offset Volt

Advanced LinCMOS RAIL-TO-RAIL OPERATIONAL AMPLIFIERS

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Advanced LinCMOS RAIL-TO-RAIL OPERATIONAL AMPLIFIERS

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Advanced LinCMOS田?RAIL-TO-RAIL OPERATIONAL AMPLIFIERS

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Advanced LinCMOS™ RAIL-TO-RAIL OPERATIONAL AMPLIFIERS

Qualified for Automotive Applications ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Output Swing includes Both Supply Rails Low Noise . . . 12 nV/√Hz Typ at f = 1 kHz Low Input Bias Current . . . 1 pA Typ Fully Specified fo

NPN video transistor

DESCRIPTION NPN silicon transistor encapsulated in a 4-lead plastic SOT223 package. APPLICATIONS • Primarily intended for cascode output and buffer stages in high resolution colour monitors.

Germanium PNP Transistor Audio Power Amp

Description: The NTE226 is a Germanium PNP transistor in a TO66 type package designed for high–fidelity, high–power output applications. Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . 35V Collector–Emitter Voltage (RB

SILICON TRIACS

Features ● 8 A RMS, 70 A Peak ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 50 mA (Quadrants 1 - 3)

SILICON TRIACS

Features ● 8 A RMS, 70 A Peak ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 50 mA (Quadrants 1 - 3)

SILICON TRIACS

Features ● 8 A RMS, 70 A Peak ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 50 mA (Quadrants 1 - 3)