MOSFETs Silicon N-Channel MOS

Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 1.35 Ω (typ.) (2) Low leakage current : IDSS = 10 μA (max) (VDS = 640 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.6 mA)

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=6A@ TC=25℃ ·Drain Source Voltage -VDSS=800V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.7Ω(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Power MOSFET (N-ch 700V VDSS)

6.0 AMPS. Silicon Rectifiers

FEATURES - High efficiency, Low VF - Glass passivated chip junction - High current capability - High reliability - High surge current capability - Low power loss - Green compound with suffix G on packing code & prefix G on datecode

CURRENT 6.0 Amperes VOLTAGE 50 to 1000 Volts

Features · The plastic package carries Underwrites Laboratory Flammability Classification 94V-0 · High forward current capability · High surge current capability · Construction utilizes void-free molded plastic technique · High temperature soldering guaranteed : 250℃/10 second

GENERAL PURPOSE SILICON RECTIFIER

Reverse Voltage - 50 to 1000 Volts Forward Current - 6.0 Ampere FEATURES • The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 • Construction utilizes void-free molded plastic technique • Low reverse leakage • High forward surge current capab

High forward surge current capability

Reverse Voltage - 50 to 1000 Volts Forward Current - 6.0 Ampere FEATURES ● The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ● Construction utilizes void-free molded plastic technique ● Low reverse leakage ● High forward surge current capabil

GENERAL PURPOSE SILICON RECTIFIER

[WEJ ELECTRONIC CO.] FEATURES • Low cost construction • Low forward voltage drop • Low reverse leakage • High forward surge current capability • High temperature soldering guaranteed: 260°C/10 seconds/0.375 (9.5mm)lead length at 5 lbs (2,3kg) tension