Topstek Current Transducer

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Power MOSFET (N-ch single 30V VDSS 60V)

Polarity：N-ch\nGeneration：U-MOSⅢ\nRoHS Compatible Product(s) (#)：Available Drain current ID 30 A \nPower Dissipation PD 30 W \nDrain-Source voltage VDSS 60 V ;

Power MOSFET (N-ch single 30V VDSS 60V)

Polarity：N-ch\nGeneration：U-MOSⅢ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：马来西亚\n Drain current ID 30 A \nPower Dissipation PD 25 W \nDrain-Source voltage VDSS 60 V \n;

Field Effect Transistor Silicon N Channel MOS Type

Switching Regulator Applications ● Low drain-source ON-resistance: RDS (ON) = 19 mΩ (typ.) ● High forward transfer admittance: |Yfs| = 34 S (typ.) ● Low leakage current: IDSS = 10 μA (max) (VDS = 60 V) ● Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Switching Voltage Regulators

MOSFETs Silicon N-channel MOS (U-MOS-H) Features (1) Low drain-source on-resistance: RDS(ON)= 12.2 mΩ(typ.) (VGS= 10 V) (2) Low leakage current: IDSS= 10 µA (max) (VDS= 60 V) (3) Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 0.2 mA) Applications • Switching Voltage Regulators

Power MOSFET (N-ch single 30V VDSS 60V)

Application Scope：Switching regulators\nPolarity：N-ch\nGeneration：U-MOSⅧ-H\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中国 Drain current ID 43 A \nPower Dissipation PD 25 W \nDrain-Source voltage VDSS 60 V \nGate-Source voltage VGSS +/-20 V ;

N-Channel 60 V (D-S) MOSFET

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N-Channel 60 V (D-S) MOSFET

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Isc N-Channel MOSFET Transistor

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