位置：首页 > IC中文资料第4672页 > TK2P60D
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
TK2P60D | BipolarSmall-SignalTransistors MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 |  |   |
TK2P60D | N-ChannelMOSFETusesadvancedtrenchtechnology 文件：1.79989 Mbytes Page：5 Pages | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. 杜因特深圳市杜因特半导体有限公司 |  | |
TK2P60D | SwitchingRegulatorApplications 文件：215.79 Kbytes Page：6 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | |
P-ChannelEnhancementModePowerMOSFET GeneralFeatures VDS=-60V,ID=-1.9A RDS(ON) | RECTRON Rectron Semiconductor |  | | |
2.0AMP.SchottkyBarrierRectifiers 文件：3.42097 Mbytes Page：2 Pages | DYELECDIYI Electronic Technology Co., Ltd. 迪一电子山东迪一电子科技有限公司 |  | |
TK2P60D产品属性
- 类型
描述
- 型号
TK2P60D
- 功能描述
MOSFET N-Ch MOS 2A 600V 60W 280pF 3.4 Ohm
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOSHIBA/东芝 |
24+ |
TO252 |
22055 |
郑重承诺只做原装进口现货 |
|||
TOSHIBA(东芝) |
24+ |
N/A |
5000 |
只有原装 |
|||
TOSHIBA |
23+ |
TO-252 |
20000 |
||||
TOSHIBA |
24+ |
TO252 |
39500 |
进口原装现货 支持实单价优 |
|||
TOSHIBA/东芝 |
24+ |
NA/ |
3998 |
原装现货,当天可交货,原型号开票 |
|||
TOSHIBA/东芝 |
13+ |
TO252 |
28612 |
原盘环保/2000 |
|||
TOSH |
11+ |
TO252 |
2000 |
原装现货海量库存欢迎咨询 |
|||
TOSHIBA |
24+ |
SOT-252 |
65300 |
一级代理/放心购买! |
|||
TOSHIBA |
24+ |
TO-252 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
TOSHIBA |
23+ |
SO-252 |
8560 |
受权代理!全新原装现货特价热卖! |
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TK2P60D规格书下载地址
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TK2P60D数据表相关新闻
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TK150E09NETOSHIBA/东芝TO-220
2019-6-26
DdatasheetPDF页码索引
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