位置：首页 > IC中文资料第4672页 > TK2P60D
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
TK2P60D | Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBA 东芝 |   | |
TK2P60D | N-Channel MOSFET uses advanced trench technology 文件：1.79989 Mbytes Page：5 Pages | DOINGTER 杜因特 | | |
TK2P60D | Power MOSFET (N-ch 500V VDSS 700V) | TOSHIBA 东芝 | | |
TK2P60D | Switching Regulator Applications 文件：215.79 Kbytes Page：6 Pages | TOSHIBA 东芝 | | |
P-Channel Enhancement Mode Power MOSFET General Features VDS = -60V,ID = -1.9A RDS(ON) | RECTRON 丽正国际 | | ||
2.0 AMP. Schottky Barrier Rectifiers 文件：3.42097 Mbytes Page：2 Pages | DYELECDIYI Electronic Technology Co., Ltd. 迪一电子山东迪一电子科技有限公司 | |
TK2P60D产品属性
- 类型
描述
- 型号
TK2P60D
- 功能描述
MOSFET N-Ch MOS 2A 600V 60W 280pF 3.4 Ohm
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOSHIBA(东芝) |
24+ |
N/A |
12600 |
原装正品现货支持实单 |
|||
TOSHIBA |
24+ |
TO-252 |
16500 |
只做原装正品现货 假一赔十 |
|||
TOSHIBA |
11+ |
DPAK |
10 |
进口原装公司现货 |
|||
TOSHIBA/东芝 |
25+ |
NewPW-Mold |
20300 |
TOSHIBA/东芝原装特价TK2P60D即刻询购立享优惠#长期有货 |
|||
TOSH |
11+ |
TO252 |
2000 |
原装现货海量库存欢迎咨询 |
|||
TOSHIBA |
2118+ |
NA |
56000 |
原装正品 价格极优 |
|||
TOSHIBA/东芝 |
2022+ |
SOT252 |
32000 |
原厂代理 终端免费提供样品 |
|||
TOSHIBA |
21+ |
DPAK |
2000 |
原装优势现货 欢迎咨询 |
|||
TOSHIBA |
21+ |
TO-252 |
18194 |
原装现货假一赔十 |
|||
NK/南科功率 |
2025+ |
NewPW-Mold |
986966 |
国产 |
TK2P60D规格书下载地址
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