BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

iscN-ChannelMOSFETTransistor

•DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance:RDS(ON)=0.165Ω(typ.) •Lowleakagecurrent:IDSS=100μA(max)(VDS=600V) •Enhancementmode:Vth=3.0to5.0V(VDS=10V,ID=1mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrob

FieldEffectTransistorSiliconNChannelMOSType(DTMOS??

SwitchingRegulatorApplications •Lowdrain-sourceON-resistance:RDS(ON)=0.165Ω(typ.) •Highforwardtransferadmittance:⎪Yfs⎪=12S(typ.) •Lowleakagecurrent:IDSS=100μA(max)(VDS=600V) •Enhancement-mode:Vth=3.0to5.0V(VDS=10V,ID=1mA)

SCHOTTKYBARRIERTYPEDIODESTACK(SWITCHINGTYPEPOWERSUPPLY,CONVERTER&CHOPPER)

SWITCHINGTYPEPOWERSUPPLYAPPLICATION. CONVERTER&CHOPPERAPPLICATION. FEATURES •AverageOutputRectifiedCurrent :IO=20A(Tc=108°C). •RepetitivePeakReverseVoltage :VRRM=60V. •FastReverseRecoveryTime:trr=35ns. •LowPeakForwardVoltage:0.58V(Max.)

PlasticSiliconRectifiers

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PLASTICSILICONRECTIFIERS

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PlasticSiliconRectifiers

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SCHOTTKYBARRIERTYPEDIODESTACK

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