Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

丝印代码：K13A50D；TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)

Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 500 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=12.5A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.47Ω(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Power MOSFET (N-ch 250V VDSS 500V)

Switching Regulator Applications

文件：191.03 Kbytes Page：6 Pages

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)

Switching Regulator Applications Low drain-source ON resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 500 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

iscN-Channel MOSFET Transistor

文件：343.35 Kbytes Page：2 Pages

Power MOSFET (N-ch 250V VDSS 500V)

Power MOSFET

文件：1.02445 Mbytes Page：8 Pages

iscN-Channel MOSFET Transistor

文件：343.35 Kbytes Page：2 Pages