Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=11A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.6Ω(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Power MOSFET (N-ch 250V VDSS 500V)

RES11A Matched, Thin-Film Resistor Dividers With 1-kΩ Inputs

1 Features • Wide temperature range: –40°C to +125°C • High ratio matching precision: ±0.05 (maximum) • Low drift: ±2 ppm/°C TCR (maximum) 2 Applications • Precision voltage divider, precision level translation • Gain and attenuating amplifiers • Difference amplifiers with high CMRR • D

MODEL PXU - TEMPERATURE/PROCESS CONTROLLERS

文件：1.90669 Mbytes Page：32 Pages

PXU PID Controller

文件：564.56 Kbytes Page：3 Pages