Silicon P-Channel MOS (U-MOS)

1. Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 38.5 mΩ (typ.) (VGS = -10 V) (3) Low leakage current: IDSS = -10 μA (max) (VDS = -60 V) (4) Enhancement mode: V

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -15A@ TC=25℃ ·Drain Source Voltage -VDSS= -60V(Min) ·Static Drain-Source On-Resistance -RDS(on) =63mΩ(Max)@VGS= -10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

P-channel Enhancement Mode Power MOSFET

Features VDS= -60V, ID= -30A RDS(ON)

Power MOSFET (P-ch single)

P-Channel 60 V (D-S) MOSFET

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MOSFETs Silicon P-Channel MOS (U-MOS)

文件：249.29 Kbytes Page：9 Pages

Silicon P-Channel MOS (U-MOS)

1. Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 38.5 mΩ (typ.) (VGS = -10 V) (3) Low leakage current: IDSS = -10 μA (max) (VDS = -60 V) (4) Enhancement mode: V