位置：首页 > IC中文资料第11488页 > TJ15P04M3,RQ(S
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Power Management Switches Features (1) Low drain-source on-resistance: RDS(ON) = 28 mΩ (typ.) (VGS = -10 V) (2) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) (3) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.1 mA) Applications • Motor Drivers • Power Management Switches | TOSHIBA 东芝 |   | ||
丝印：DPAK；Isc P-Channel MOSFET Transistor • DESCRITION • Switching Voltage Regulators • FEATURES • Low drain-source on-resistance: RDS(ON) = 36mΩ (MAX) • Enhancement mode: Vth =0.8 to 2V (VDS = -10 V, ID=-7.5A) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBA 东芝 | |
TJ15P04M3,RQ(S产品属性
- 类型
描述
- 型号
TJ15P04M3,RQ(S
- 功能描述
MOSFET P-Ch MOS 1100 pF 29W PD -15A -40V
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOSHIBA/东芝 |
25+ |
TO-252 |
880000 |
明嘉莱只做原装正品现货 |
|||
TOSHIBA |
475 |
||||||
TOSHIBA |
24+ |
con |
475 |
现货常备产品原装可到京北通宇商城查价格 |
|||
TOSHIBA(东芝) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
TOSHIBA |
22+ |
TO-252-3 |
20000 |
公司只做原装 品质保证 |
|||
TOSHIBA/东芝 |
2025+ |
TO-252 |
890 |
原装进口价格优 请找坤融电子! |
|||
TOSHIBA/东芝 |
25+ |
TO-252 |
30000 |
房间原装现货特价热卖,有单详谈 |
|||
VBsemi |
24+ |
TO252 |
25836 |
新到现货，只做全新原装正品 |
|||
TOSHIBA/东芝 |
17+ |
TO-252 |
890 |
原装现货 |
|||
TOSHIBA/东芝 |
23+ |
TO-252 |
8678 |
原厂原装 |
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