POWER TRANSISTORS(10A,40-100V,80W)

10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 40 - 100 VOLTS 80WATTS TIP33,TIP33A,TIP33B,TIP33C ---> NPN TIP34,TIP34A,TIP34B,TIP34C ---> PNP

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type TIP33/33A/33B/33C • DC current gain hFE=40(Min)@IC=1.0A APPLICATIONS • Designed for use in general purpose power amplifier and switching applications.

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type TIP33/33A/33B/33C • DC current gain hFE=40(Min)@IC=1.0A APPLICATIONS • Designed for use in general purpose power amplifier and switching applications.

PNP SILICON POWER TRANSISTORS

● Designed for Complementary Use with the TIP33 Series ● 80 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Customer-Specified Selections Available

SILICON POWER TRANSISTORS

SILICON POWER TRANSISTORS They are PNP power transistors mounted in jedec TO-3PN. They are intended for use in general purpose power amplifier and switching applications. NPN complements are TIP33-A-B-C Compliance to RoHS.

HIGH POWER TRANSISTORS

HIGH POWER TRANSISTORS TO- 3PN Non Isolated Plastic Package For General Purpose Power Amplifier and Switching Applications.

P-N-P SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS

P-N-P SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USEWITH TIP33, TIP33A, TIP33B, TIP33C • 80 W at 25°C Case Temperature • 10A Rated Collector Current • Min fT of 3 MHz at 10V, 500mA

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR TIP33 and TIP34 series devices are complementary silicon high power transistors manufactured by the epitaxial base process, designed for general purpose amplifier and switching applications.

Silicon PNP Power Transistors

文件：139.63 Kbytes Page：3 Pages

General purpose PNP transistor

Trans GP BJT PNP 40V 10A 3-Pin(3+Tab) TO-218

Transistor

SILICON POWER TRANSISTORS

SILICON POWER TRANSISTORS They are PNP power transistors mounted in jedec TO-3PN. They are intended for use in general purpose power amplifier and switching applications. NPN complements are TIP33-A-B-C Compliance to RoHS.

P-N-P SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS

P-N-P SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USEWITH TIP33, TIP33A, TIP33B, TIP33C • 80 W at 25°C Case Temperature • 10A Rated Collector Current • Min fT of 3 MHz at 10V, 500mA

HIGH POWER TRANSISTORS

HIGH POWER TRANSISTORS TO- 3PN Non Isolated Plastic Package For General Purpose Power Amplifier and Switching Applications.

POWER TRANSISTORS(10A,40-100V,80W)

10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 40 - 100 VOLTS 80WATTS TIP33,TIP33A,TIP33B,TIP33C ---> NPN TIP34,TIP34A,TIP34B,TIP34C ---> PNP

PNP SILICON POWER TRANSISTORS

● Designed for Complementary Use with the TIP33 Series ● 80 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Customer-Specified Selections Available

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type TIP33/33A/33B/33C • DC current gain hFE=40(Min)@IC=1.0A APPLICATIONS • Designed for use in general purpose power amplifier and switching applications.

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type TIP33/33A/33B/33C • DC current gain hFE=40(Min)@IC=1.0A APPLICATIONS • Designed for use in general purpose power amplifier and switching applications.

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR TIP33 and TIP34 series devices are complementary silicon high power transistors manufactured by the epitaxial base process, designed for general purpose amplifier and switching applications.

TO-3P Fully Isolated Plastic Package Transistor CDIL

TO-3P Fully Isolated Plastic Package Transistor CDIL

NPN POWER TRANSISTORS

Complementary TIP34F, 34AF, 34BF, 34CF General Purpose Power Amplifier and Switching Applications.

HIGH POWER TRANSISTORS

HIGH POWER TRANSISTORS TO- 3PN Non Isolated Plastic Package For General Purpose Power Amplifier and Switching Applications.

POWER TRANSISTORS(10A,40-100V,80W)

10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 40 - 100 VOLTS 80WATTS TIP33,TIP33A,TIP33B,TIP33C ---> NPN TIP34,TIP34A,TIP34B,TIP34C ---> PNP

COMPLEMENTARY SILICON POWER TRANSISTORS

Complementary Silicon High-Power Transistors . . . for general–purpose power amplifier and switching applications. • 10 A Collector Current • Low Leakage Current — ICEO = 0.7 mA @ 60 V • Excellent dc Gain — hFE = 40 Typ @ 3.0 A • High Current Gain Bandwidth Product — hfe = 3.0 min @ IC = 0.5

COMPLEMENTARY SILICON POWER TRANSISTORS

Complementary Silicon High-Power Transistors . . . for general–purpose power amplifier and switching applications. • 10 A Collector Current • Low Leakage Current — ICEO = 0.7 mA @ 60 V • Excellent dc Gain — hFE = 40 Typ @ 3.0 A • High Current Gain Bandwidth Product — hfe = 3.0 min @ IC = 0.5

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type TIP33/33A/33B/33C • DC current gain hFE=40(Min)@IC=1.0A APPLICATIONS • Designed for use in general purpose power amplifier and switching applications.

PNP SILICON POWER TRANSISTORS

● Designed for Complementary Use with the TIP33 Series ● 80 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Customer-Specified Selections Available

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type TIP33/33A/33B/33C • DC current gain hFE=40(Min)@IC=1.0A APPLICATIONS • Designed for use in general purpose power amplifier and switching applications.

P-N-P SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS

P-N-P SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USEWITH TIP33, TIP33A, TIP33B, TIP33C • 80 W at 25°C Case Temperature • 10A Rated Collector Current • Min fT of 3 MHz at 10V, 500mA

SILICON POWER TRANSISTORS

SILICON POWER TRANSISTORS They are PNP power transistors mounted in jedec TO-3PN. They are intended for use in general purpose power amplifier and switching applications. NPN complements are TIP33-A-B-C Compliance to RoHS.

HIGH POWER TRANSISTORS

HIGH POWER TRANSISTORS TO- 3PN Non Isolated Plastic Package For General Purpose Power Amplifier and Switching Applications.

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR TIP33 and TIP34 series devices are complementary silicon high power transistors manufactured by the epitaxial base process, designed for general purpose amplifier and switching applications.

TO-3P Fully Isolated Plastic Package Transistor CDIL

TO-3P Fully Isolated Plastic Package Transistor CDIL

NPN POWER TRANSISTORS

Complementary TIP34F, 34AF, 34BF, 34CF General Purpose Power Amplifier and Switching Applications.

HIGH POWER TRANSISTORS

HIGH POWER TRANSISTORS TO- 3PN Non Isolated Plastic Package For General Purpose Power Amplifier and Switching Applications.

POWER TRANSISTORS(10A,40-100V,80W)

10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 40 - 100 VOLTS 80WATTS TIP33,TIP33A,TIP33B,TIP33C ---> NPN TIP34,TIP34A,TIP34B,TIP34C ---> PNP

COMPLEMENTARY SILICON POWER TRANSISTORS

Complementary Silicon High-Power Transistors . . . for general–purpose power amplifier and switching applications. • 10 A Collector Current • Low Leakage Current — ICEO = 0.7 mA @ 60 V • Excellent dc Gain — hFE = 40 Typ @ 3.0 A • High Current Gain Bandwidth Product — hfe = 3.0 min @ IC = 0.5

COMPLEMENTARY SILICON POWER TRANSISTORS

Complementary Silicon High-Power Transistors . . . for general–purpose power amplifier and switching applications. • 10 A Collector Current • Low Leakage Current — ICEO = 0.7 mA @ 60 V • Excellent dc Gain — hFE = 40 Typ @ 3.0 A • High Current Gain Bandwidth Product — hfe = 3.0 min @ IC = 0.5

COMPLEMENTARY SILICON POWER TRANSISTORS

Description The devices are manufactured in epitaxial-base planar technology and are suitable for power linear and switching applications. Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ General purpose

EPITAXIAL PLANAR PNP TRANSISTOR (HIGH POWER AMPLIFIER)

HIGH POWER AMPLIFIER APPLICATION. FEATURES • Complementary to TIP33C. • Recommended for 45Wᴕ 50W Audio Frequency Amplifier Output Stage.

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type TIP33/33A/33B/33C • DC current gain hFE=40(Min)@IC=1.0A APPLICATIONS • Designed for use in general purpose power amplifier and switching applications.

PNP SILICON POWER TRANSISTORS

● Designed for Complementary Use with the TIP33 Series ● 80 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Customer-Specified Selections Available

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type TIP33/33A/33B/33C • DC current gain hFE=40(Min)@IC=1.0A APPLICATIONS • Designed for use in general purpose power amplifier and switching applications.

HIGH POWER TRANSISTORS

HIGH POWER TRANSISTORS TO- 3PN Non Isolated Plastic Package For General Purpose Power Amplifier and Switching Applications.

P-N-P SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS

P-N-P SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USEWITH TIP33, TIP33A, TIP33B, TIP33C • 80 W at 25°C Case Temperature • 10A Rated Collector Current • Min fT of 3 MHz at 10V, 500mA

SILICON POWER TRANSISTORS

SILICON POWER TRANSISTORS They are PNP power transistors mounted in jedec TO-3PN. They are intended for use in general purpose power amplifier and switching applications. NPN complements are TIP33-A-B-C Compliance to RoHS.

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR TIP33 and TIP34 series devices are complementary silicon high power transistors manufactured by the epitaxial base process, designed for general purpose amplifier and switching applications.

TO-3P Fully Isolated Plastic Package Transistor CDIL

TO-3P Fully Isolated Plastic Package Transistor CDIL

NPN POWER TRANSISTORS

Complementary TIP34F, 34AF, 34BF, 34CF General Purpose Power Amplifier and Switching Applications.

HIGH POWER TRANSISTORS

HIGH POWER TRANSISTORS TO- 3PN Non Isolated Plastic Package For General Purpose Power Amplifier and Switching Applications.

POWER TRANSISTORS(10A,120-160V,80W)

10 AMPERE COMPLMENTARY SILICON POWER TRANSISTORS 120 - 160 VOLTS 80 WATTS

POWER TRANSISTORS(10A,120-160V,80W)

10 AMPERE COMPLMENTARY SILICON POWER TRANSISTORS 120 - 160 VOLTS 80 WATTS

POWER TRANSISTORS(10A,120-160V,80W)

10 AMPERE COMPLMENTARY SILICON POWER TRANSISTORS 120 - 160 VOLTS 80 WATTS

TO-3P Fully Isolated Plastic Package Transistor CDIL

TO-3P Fully Isolated Plastic Package Transistor CDIL

NPN POWER TRANSISTORS

Complementary TIP34F, 34AF, 34BF, 34CF General Purpose Power Amplifier and Switching Applications.

HIGH POWER TRANSISTORS

HIGH POWER TRANSISTORS TO- 3PN Non Isolated Plastic Package For General Purpose Power Amplifier and Switching Applications.

Silicon PNP Power Transistors

文件：139.63 Kbytes Page：3 Pages

封装/外壳：TO-218-3 包装：管件 描述：TRANS PNP 60V 10A SOT93 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-218-3 包装：散装 描述：TRANS PNP 80V 10A TO218 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个