POWER TRANSISTORS(10A,40-100V,80W)

10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 40 - 100 VOLTS 80WATTS TIP33,TIP33A,TIP33B,TIP33C ---> NPN TIP34,TIP34A,TIP34B,TIP34C ---> PNP

COMPLEMENTARY SILICON POWER TRANSISTORS

Complementary Silicon High-Power Transistors . . . for general–purpose power amplifier and switching applications. • 10 A Collector Current • Low Leakage Current — ICEO = 0.7 mA @ 60 V • Excellent dc Gain — hFE = 40 Typ @ 3.0 A • High Current Gain Bandwidth Product — hfe = 3.0 min @ IC = 0.5

COMPLEMENTARY SILICON POWER TRANSISTORS

Complementary Silicon High-Power Transistors . . . for general–purpose power amplifier and switching applications. • 10 A Collector Current • Low Leakage Current — ICEO = 0.7 mA @ 60 V • Excellent dc Gain — hFE = 40 Typ @ 3.0 A • High Current Gain Bandwidth Product — hfe = 3.0 min @ IC = 0.5

COMPLEMENTARY SILICON POWER TRANSISTORS

Description The devices are manufactured in epitaxial-base planar technology and are suitable for power linear and switching applications. Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ General purpose

EPITAXIAL PLANAR PNP TRANSISTOR (HIGH POWER AMPLIFIER)

HIGH POWER AMPLIFIER APPLICATION. FEATURES • Complementary to TIP33C. • Recommended for 45Wᴕ 50W Audio Frequency Amplifier Output Stage.

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type TIP33/33A/33B/33C • DC current gain hFE=40(Min)@IC=1.0A APPLICATIONS • Designed for use in general purpose power amplifier and switching applications.

PNP SILICON POWER TRANSISTORS

● Designed for Complementary Use with the TIP33 Series ● 80 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Customer-Specified Selections Available

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type TIP33/33A/33B/33C • DC current gain hFE=40(Min)@IC=1.0A APPLICATIONS • Designed for use in general purpose power amplifier and switching applications.

HIGH POWER TRANSISTORS

HIGH POWER TRANSISTORS TO- 3PN Non Isolated Plastic Package For General Purpose Power Amplifier and Switching Applications.

P-N-P SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS

P-N-P SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USEWITH TIP33, TIP33A, TIP33B, TIP33C • 80 W at 25°C Case Temperature • 10A Rated Collector Current • Min fT of 3 MHz at 10V, 500mA

SILICON POWER TRANSISTORS

SILICON POWER TRANSISTORS They are PNP power transistors mounted in jedec TO-3PN. They are intended for use in general purpose power amplifier and switching applications. NPN complements are TIP33-A-B-C Compliance to RoHS.

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR TIP33 and TIP34 series devices are complementary silicon high power transistors manufactured by the epitaxial base process, designed for general purpose amplifier and switching applications.

封装/外壳：TO-218-3 包装：散装 描述：TRANS PNP 100V 10A TO218 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-247-3 包装：剪切带（CT）带盒（TB） 描述：TRANS PNP 100V 10A TO247-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

EPITAXIAL PLANAR PNP TRANSISTOR (HIGH POWER AMPLIFIER)

Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch

Trans GP BJT PNP 100V 10A 3-Pin(3+Tab) TO-218

Silicon PNP Power Transistors

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Complementary power transistors

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TO-3P Fully Isolated Plastic Package Transistor CDIL

TO-3P Fully Isolated Plastic Package Transistor CDIL

NPN POWER TRANSISTORS

Complementary TIP34F, 34AF, 34BF, 34CF General Purpose Power Amplifier and Switching Applications.

HIGH POWER TRANSISTORS

HIGH POWER TRANSISTORS TO- 3PN Non Isolated Plastic Package For General Purpose Power Amplifier and Switching Applications.