POWER TRANSISTORS(1.0A,40-100V,30W)

NPN SILICON POWER TRANSISTORS

● Designed for Complementary Use with the TIP30 Series ● 30 W at 25°C Case Temperature ● 1 A Continuous Collector Current ● 3 A Peak Collector Current ● Customer-Specified Selections Available

NPN SILICON POWER TRANSISTORS

● Designed for Complementary Use with the TIP30 Series ● 30 W at 25°C Case Temperature ● 1 A Continuous Collector Current ● 3 A Peak Collector Current ● Customer-Specified Selections Available

General purpose Amplifier and Switching Applications

TIP29, 29A, 29B, 29C NPN PLASTIC POWER TRANSISTORS TIP30, 30A, 30B, 30C PNP PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications

Medium Power Linear Switching Applications

Features • Complementary to TIP30/TIP30A/TIP30B/TIP30C

COMPLEMENTARY SILICON EPITAXIAL-BASE POWER TRANSISTORS

COMPLEMENTARY SILICON EPITAXIAL-BASE POWER TRANSISTORS THE TIP29 SERIES (NPN) AND TIP30 SERIES (PNP) ARE COMPLEMENTARY SILICON EPITAXIAL BASE POWER TRANSISTORS DESIGNED FOR POWER AMPLIFIERS AND SWITCHING APPLICATIONS.

1.0 Amp Complementary Silicon Power Transistors

Features • Halogen free available upon request by adding suffix -HF • Mounting Torgue: 5 in-lbs Maximum • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates RoHS Compliant. See ordering information) • Marking: Type Number • Rth(jc) is 4.167°C/W, Rth(ja) is 62.5°C/W • Epoxy meets UL

PLASTIC POWER TRANSISTORS

TIP29, A, B, C NPN TIP30, A, B, C PNP TO-220 Plastic Package Complementary Silicon Transistors intended for a wide variety of Switching and Amplifier Applications, Series and Shunt Regulators, Driver and Output stages of Hi-Fi Amplifiers

Complementary Silicon Plastic Power Transistors

Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. Compact TO−220 package. Features • These Devices are Pb−Free and are RoHS Compliant*

isc Silicon NPN Power Transistors

DESCRIPTION ·Collector-Emitter Sustaining Voltage-: VCEO(SUS) = 40V(Min) ·Collector-Emitter Saturation Voltage-: VCE(sat) = 0.7V(Max.)@IC= 1.0A ·Complement to Type TIP30 APPLICATIONS ·Designed for use in general purpose amplifier and switching applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·Complement to type TIP30/30A/30B/30C APPLICATIONS ·For use in general purpose power amplifier and switching applications

1.0 Amp Complementary Silicon Power Transistors

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Silicon NPN Power Transistors

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SILICON NPN POWER TRANSISTORS

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1.0 Amp Complementary Silicon Power Transistors

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NPN SILICON POWER TRANSISTORS

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1.0 Ampere NPN Type Epitaxial Silicon Power Transistors

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High Power Bipolar Transistor

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NPN Epitaxial Silicon Transistor

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Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch

三极管

中等功率双极型晶体管

SILICON POWER TRANSISTORS

PNP TIP2955 NPN TIP3055 The TIP3055 is a NPN epitaxial-base transistor in TO3PN package.It is intended for power switching circuits, series and shunt regulators, output stage and hi-fi amplifiers. The complementary is the TIP2955 For PNP types Voltage and Curent are Negative. Compliance to

Complementary Silicon Power Transistors

15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 90 WATTS • DC Current Gain − hFE = 20-70 @ IC= 4.0 Adc • Collector−Emitter Saturation Voltage − VCE(sat) = 1.1 Vdc (Max) @ IC= 4.0 Adc • Excellent Safe Operating Area • These are Pb−Free Devices*

Complementary Silicon Power Transistors

15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 90 WATTS • DC Current Gain − hFE = 20-70 @ IC= 4.0 Adc • Collector−Emitter Saturation Voltage − VCE(sat) = 1.1 Vdc (Max) @ IC= 4.0 Adc • Excellent Safe Operating Area • These are Pb−Free Devices*

Silicon PNP Power Transistor

DESCRIPTION • Excellent Safe Operating Area • DC Current Gain- : hFE=20-70@lc = -4A • Collector-Emitter Saturation Voltage- :VCE(sat)=-1.1V(Max)@lc = -4A • Complement to Type TIP3055 APPLICATIONS • Designed for general-purpose switching and amplifier applications.

Complementary Power Transistor

Description: Complementary Silicon Power Transistors are designed for use in general purpose power amplifier and switching applications. Features: • Power Dissipation-PD = 90W at TC = 25°C • • DC Current Gain hFE = 20 ~ 100 at IC = 4A • • VCE(sat) = 1.1V (Max.) at IC = 4A, IB = 400mA

POWER TRANSISTORS(15A,60V,90W)

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 90 WATTS ..designed for use int general-purpose amplifier and switching application NPN -> TIP3055 PNP -> TIP2955

PNP SILICON POWER TRANSISTOR

• Designed for Complementary Use with the TIP3055 Series • 90 W at 25°C Case Temperature • 15 A Continuous Collector Current • Customer-Specified Selections Available

POWER TRANSISTORS COMPLEMENTARY SILICON

15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 90 WATTS • DC Current Gain − hFE = 20-70 @ IC= 4.0 Adc • Collector−Emitter Saturation Voltage − VCE(sat) = 1.1 Vdc (Max) @ IC= 4.0 Adc • Excellent Safe Operating Area • These are Pb−Free Devices*

COMPLEMENTARY SILICON POWER TRANSISTORS

NPN --> TIP3055 PNP --> TIP2955 Description The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications. Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ Gen

POWER TRANSISTORS COMPLEMENTARY SILICON

TIP2955 PNP TIP3055 NPN 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 90 WATTS . . . designed for general–purpose switching and amplifier applications. • DC Current Gain — hFE = 20–70 @ IC = 4.0 Adc • Collector–Emitter Saturation Voltage — VCE(sat) = 1.1 Vdc (Max) @

PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)

Audio Power Amplifier DC to DC Converter * High Current Capability * High Power Dissipation * Complematary to TIP3055

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3PN package ·Complement to type TIP3055 ·90 W at 25°C case temperature ·15 A continuous collector current APPLICATIONS ·Designed for general–purpose switching and amplifier applications.

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type TIP3055 • 90 W at 25°C case temperature • 15 A continuous collector current APPLICATIONS • Designed for general–purpose switching and amplifier applications.

Complementary Silicon High Power Ttransistors

PNP TIP2955 NPN TIP3055 DESCRIPTION The TIP3055 is a silicon Epitaxial-Base Planar NPN transistor mountend in TO-247 plastic package. It is intented for power switching circuits, series and shunt regulators, output stages and hi-fi amplifiers. The complementary PNP type is the TIP295

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The TIP3055 is a silicon Epitaxial-Base Planar NPN transistor mountend in TO-218 plastic package. It is intented for power switching circuits, series and shunt regulators, output stages and hi-fi amplifiers. The complementary PNP type is the TIP2955.

TO-3P Fully Isolated Plastic Package Transistor CDIL

TO-3P Fully Isolated Plastic Package Transistor CDIL

Complementary Silicon Power Transistors

15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 90 WATTS • DC Current Gain − hFE = 20-70 @ IC= 4.0 Adc • Collector−Emitter Saturation Voltage − VCE(sat) = 1.1 Vdc (Max) @ IC= 4.0 Adc • Excellent Safe Operating Area • These are Pb−Free Devices*

TO-3P Fully Isolated Plastic Package Transistor CDIL

TO-3P Fully Isolated Plastic Package Transistor CDIL

NPN SILICON POWER TRANSISTORS

● Designed for Complementary Use with the TIP30 Series ● 30 W at 25°C Case Temperature ● 1 A Continuous Collector Current ● 3 A Peak Collector Current ● Customer-Specified Selections Available

Medium Power Linear Switching Applications

Features • Complementary to TIP30/TIP30A/TIP30B/TIP30C

General purpose Amplifier and Switching Applications

TIP29, 29A, 29B, 29C NPN PLASTIC POWER TRANSISTORS TIP30, 30A, 30B, 30C PNP PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications

COMPLEMENTARY SILICON EPITAXIAL-BASE POWER TRANSISTORS

COMPLEMENTARY SILICON EPITAXIAL-BASE POWER TRANSISTORS THE TIP29 SERIES (NPN) AND TIP30 SERIES (PNP) ARE COMPLEMENTARY SILICON EPITAXIAL BASE POWER TRANSISTORS DESIGNED FOR POWER AMPLIFIERS AND SWITCHING APPLICATIONS.

NPN power transistors

Description The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP types are TIP30A and TIP30C. Features ■ NPN transistors Applications ■ Audi

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·Complement to type TIP30/30A/30B/30C APPLICATIONS ·For use in general purpose power amplifier and switching applications

1.0 Amp Complementary Silicon Power Transistors

Features • Halogen free available upon request by adding suffix -HF • Mounting Torgue: 5 in-lbs Maximum • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates RoHS Compliant. See ordering information) • Marking: Type Number • Rth(jc) is 4.167°C/W, Rth(ja) is 62.5°C/W • Epoxy meets UL

NPN SILICON POWER TRANSISTORS

● Designed for Complementary Use with the TIP30 Series ● 30 W at 25°C Case Temperature ● 1 A Continuous Collector Current ● 3 A Peak Collector Current ● Customer-Specified Selections Available

POWER TRANSISTORS(1.0A,40-100V,30W)

Complementary Silicon Plastic Power Transistors

Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. Compact TO−220 package. Features • These Devices are Pb−Free and are RoHS Compliant*

PLASTIC POWER TRANSISTORS

TIP29, A, B, C NPN TIP30, A, B, C PNP TO-220 Plastic Package Complementary Silicon Transistors intended for a wide variety of Switching and Amplifier Applications, Series and Shunt Regulators, Driver and Output stages of Hi-Fi Amplifiers

High Power Bipolar Transistors

Features • Collector-Emitter sustaining voltage - Vceo (sus) = 60V (Minimum) - TIP29A = 100V (Minimum) - TIP29C • Collector-Emitter saturation voltage - Vce (sat) = 0.7V (Maximum) at Ic = 1A • Current gain-bandwidth product ft = 3MHz (Minimum) at Ic = 200mA

1.0 Amp Complementary Silicon Power Transistors

Features • Halogen free available upon request by adding suffix -HF • Mounting Torgue: 5 in-lbs Maximum • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates RoHS Compliant. See ordering information) • Marking: Type Number • Rth(jc) is 4.167°C/W, Rth(ja) is 62.5°C/W • Epoxy meets UL

Complementary Silicon Plastic Power Transistors

Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. Compact TO−220 package. Features • These Devices are Pb−Free and are RoHS Compliant*

PLASTIC POWER TRANSISTORS

TIP29, A, B, C NPN TIP30, A, B, C PNP TO-220 Plastic Package Complementary Silicon Transistors intended for a wide variety of Switching and Amplifier Applications, Series and Shunt Regulators, Driver and Output stages of Hi-Fi Amplifiers

POWER TRANSISTORS(1.0A,40-100V,30W)

1 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80-100 VOLTS 30 WATTS

. . . designed for use in general purpose amplifier and switching applications. NPN -> TIP29B, TIP29C PNP -> TIP30B,TIP30C

POWER TRANSISTORS COMPLEMENTARY SILICON

Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. Compact TO−220 package. Features • These Devices are Pb−Free and are RoHS Compliant*

NPN SILICON POWER TRANSISTORS

● Designed for Complementary Use with the TIP30 Series ● 30 W at 25°C Case Temperature ● 1 A Continuous Collector Current ● 3 A Peak Collector Current ● Customer-Specified Selections Available

NPN SILICON POWER TRANSISTORS

● Designed for Complementary Use with the TIP30 Series ● 30 W at 25°C Case Temperature ● 1 A Continuous Collector Current ● 3 A Peak Collector Current ● Customer-Specified Selections Available