MICROWAVE POWER GaAs FET

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MICROWAVE POWER GaAs FET

4.40-5.00GHz 8-Watt Internally Matched Power FET

FEATURES • 4.40–5.00GHz Bandwidth • Input/Output Impedance Matched to 50 Ohms • +39.5 dBm Output Power at 1dB Compression • 10.5 dB Power Gain at 1dB Compression • 35 Power Added Efficiency • -46 dBc IM3 at PO = 28.5 dBm SCL • 100 Tested for DC, RF, and RTH

4.40-5.00GHz 8-Watt Internally Matched Power FET

FEATURES • 4.40–5.00GHz Bandwidth • Input/Output Impedance Matched to 50 Ohms • +39.5 dBm Output Power at 1dB Compression • 10.5 dB Power Gain at 1dB Compression • 35 Power Added Efficiency • -46 dBc IM3 at PO = 28.5 dBm SCL • 100 Tested for DC, RF, and RTH

C-BAND POWER GAAS MESFET

DESCRIPTION The NEZ C-Band series of high performance microwave power GaAs MESFETs provides high gain and low intermodulation distortion over standard and digital communication bands from 3 to 8 GHz. FEATURES ● INTERNALLY MATCHED (IN/OUT) ● HIGH Pout (4 W, 8 W, & 15W) ● CLASS A OPERATION

C-BAND POWER GAAS MESFET

DESCRIPTION The NEZ C-Band series of high performance microwave power GaAs MESFETs provides high gain and low intermodulation distortion over standard and digital communication bands from 3 to 8 GHz. FEATURES ● INTERNALLY MATCHED (IN/OUT) ● HIGH Pout (4 W, 8 W, & 15W) ● CLASS A OPERATION

C-Band Internally Matched FET

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