4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

DESCRIPTION The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at C-band for microwave and satellite communications. Internal input and output circuits matched to 50 Ω are designed to provide good flatness of gain and output power in allocated

4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

DESCRIPTION The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at C-band for microwave and satellite communications. Internal input and output circuits matched to 50 Ω are designed to provide good flatness of gain and output power in allocated

C-BAND POWER GAAS MESFET

DESCRIPTION The NEZ C-Band series of high performance microwave power GaAs MESFETs provides high gain and low intermodulation distortion over standard and digital communication bands from 3 to 8 GHz. FEATURES ● INTERNALLY MATCHED (IN/OUT) ● HIGH Pout (4 W, 8 W, & 15W) ● CLASS A OPERATION

C-BAND POWER GAAS MESFET

DESCRIPTION The NEZ C-Band series of high performance microwave power GaAs MESFETs provides high gain and low intermodulation distortion over standard and digital communication bands from 3 to 8 GHz. FEATURES ● INTERNALLY MATCHED (IN/OUT) ● HIGH Pout (4 W, 8 W, & 15W) ● CLASS A OPERATION

4.40-5.00GHz 8-Watt Internally Matched Power FET

FEATURES • 4.40–5.00GHz Bandwidth • Input/Output Impedance Matched to 50 Ohms • +39.5 dBm Output Power at 1dB Compression • 10.5 dB Power Gain at 1dB Compression • 35 Power Added Efficiency • -46 dBc IM3 at PO = 28.5 dBm SCL • 100 Tested for DC, RF, and RTH

4.40-5.00GHz 8-Watt Internally Matched Power FET

FEATURES • 4.40–5.00GHz Bandwidth • Input/Output Impedance Matched to 50 Ohms • +39.5 dBm Output Power at 1dB Compression • 10.5 dB Power Gain at 1dB Compression • 35 Power Added Efficiency • -46 dBc IM3 at PO = 28.5 dBm SCL • 100 Tested for DC, RF, and RTH

C-Band Internally Matched FET

文件：256.32 Kbytes Page：4 Pages