MICROWAVE POWER GaAs FET

FEATURES ■ HIGH POWERT P1dB=36.5dBm at 14.0GHz to 14.5GHz ■ HIGH GAIN G1dB=6.5dB at 14.0GHz to 14.5GHz ■ BROAD BAND INTERNALLY MATCHED ■ HERMETICALLY SEALED PACKAGE

Microwave Power GaAs FET - TIM1414-4LA - Toshiba

14.0-14.5GHz, 4W Internally Matched Power FET

14.0-14.5GHz, 4W Internally Matched Power FET • 14.0-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM • EIA FEATURES HIGH PAE( 27 TYPICAL) • EIB FEATURES HIGH IP3(49dBm TYPICAL) • +36.5/+35.5dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB • 8.5/7.5dB TYPICAL G1dB POWER GAIN FOR EIA/EI

4W X, Ku-BAND POWER GaAs MESFET

DESCRIPTION The NEZ1011-4E and NEZ1414-4E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with only a 50 Ω external circuit. To reduce thermal resistance the devic

14.00-14.50GHz 4-Watt Internally-Matched Power FET

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Internally Matched Power GaAs FET

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