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TIC216晶体管资料

  • TIC216A别名:TIC216A三极管、TIC216A晶体管、TIC216A晶体三极管

  • TIC216A生产厂家

  • TIC216A制作材料:Triac

  • TIC216A性质

  • TIC216A封装形式:直插封装

  • TIC216A极限工作电压:100V

  • TIC216A最大电流允许值:6A

  • TIC216A最大工作频率:<1MHZ或未知

  • TIC216A引脚数:3

  • TIC216A最大耗散功率

  • TIC216A放大倍数

  • TIC216A图片代号:B-10

  • TIC216Avtest:100

  • TIC216Ahtest:999900

  • TIC216Aatest:6

  • TIC216Awtest:0

  • TIC216A代换 TIC216A用什么型号代替:TAG221-100,TAG226-100,TXC18H40M,

型号 功能描述 生产厂家 企业 LOGO 操作
TIC216

SILICON TRIACS

● Sensitive Gate Triacs ● 6 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 5 mA (Quadrants 1 - 3)

POINN

TIC216

SILICON TRIACS

● Sensitive Gate Triacs\n● 6 A RMS\n● Glass Passivated Wafer\n● 400 V to 800 V Off-State Voltage\n● Max IGT of 5 mA (Quadrants 1 - 3)

POINN

TIC216

Thyristor

COMSET

TIC216

SILICON TRIACS

TI

德州仪器

TIC216

SILICON TRIACS

文件:104.51 Kbytes Page:3 Pages

TI

德州仪器

TIC216

SILICON TRIACS

文件:115.59 Kbytes Page:3 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

SILICON BIDIRECTIONAL TRIODE THYRISTOR

DESCRIPTION This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by either polarity of gate signal with main Terminal 2 at either polarity. • 6 A RMS • Glass Passivated Wafer • 100 V to 800 V Off-State Voltage • Max IGT of 5 mA (Qua

COMSET

SILICON BIDIRECTIONAL TRIODE THYRISTOR

DESCRIPTION This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by either polarity of gate signal with main Terminal 2 at either polarity. • 6 A RMS • Glass Passivated Wafer • 100 V to 800 V Off-State Voltage • Max IGT of 5 mA (Qua

COMSET

SILICON BIDIRECTIONAL TRIODE THYRISTOR

DESCRIPTION This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by either polarity of gate signal with main Terminal 2 at either polarity. • 6 A RMS • Glass Passivated Wafer • 100 V to 800 V Off-State Voltage • Max IGT of 5 mA (Qua

COMSET

SILICON TRIACS

● Sensitive Gate Triacs ● 6 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 5 mA (Quadrants 1 - 3)

POINN

SILICON TRIACS

● Sensitive Gate Triacs ● 6 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 5 mA (Quadrants 1 - 3)

POINN

SILICON BIDIRECTIONAL TRIODE THYRISTOR

DESCRIPTION This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by either polarity of gate signal with main Terminal 2 at either polarity. • 6 A RMS • Glass Passivated Wafer • 100 V to 800 V Off-State Voltage • Max IGT of 5 mA (Qua

COMSET

SILICON BIDIRECTIONAL TRIODE THYRISTOR

DESCRIPTION This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by either polarity of gate signal with main Terminal 2 at either polarity. • 6 A RMS • Glass Passivated Wafer • 100 V to 800 V Off-State Voltage • Max IGT of 5 mA (Qua

COMSET

SILICON TRIACS

● Sensitive Gate Triacs ● 6 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 5 mA (Quadrants 1 - 3)

POINN

SILICON TRIACS

● Sensitive Gate Triacs ● 6 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 5 mA (Quadrants 1 - 3)

POINN

SILICON BIDIRECTIONAL TRIODE THYRISTOR

DESCRIPTION This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by either polarity of gate signal with main Terminal 2 at either polarity. • 6 A RMS • Glass Passivated Wafer • 100 V to 800 V Off-State Voltage • Max IGT of 5 mA (Qua

COMSET

SILICON TRIACS

文件:163.44 Kbytes Page:3 Pages

COMSET

SILICON TRIACS

文件:104.51 Kbytes Page:3 Pages

TI

德州仪器

SILICON TRIACS

文件:163.44 Kbytes Page:3 Pages

COMSET

SILICON TRIACS

文件:163.44 Kbytes Page:3 Pages

COMSET

SILICON TRIACS

文件:104.51 Kbytes Page:3 Pages

TI

德州仪器

SILICON TRIACS

文件:104.51 Kbytes Page:3 Pages

TI

德州仪器

SILICON TRIACS

文件:104.51 Kbytes Page:3 Pages

TI

德州仪器

SILICON TRIACS

文件:163.44 Kbytes Page:3 Pages

COMSET

SILICON TRIACS

文件:115.59 Kbytes Page:3 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

isc Triacs

文件:108.68 Kbytes Page:1 Pages

ISC

无锡固电

Sensitive Gate Triacs

文件:43.24 Kbytes Page:1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SILICON TRIACS

文件:104.51 Kbytes Page:3 Pages

TI

德州仪器

SILICON TRIACS

文件:104.51 Kbytes Page:3 Pages

TI

德州仪器

Sensitive Gate Triacs

文件:48.59 Kbytes Page:1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

isc Triacs

文件:108.68 Kbytes Page:1 Pages

ISC

无锡固电

SILICON TRIACS

文件:115.59 Kbytes Page:3 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

SILICON TRIACS

文件:163.44 Kbytes Page:3 Pages

COMSET

封装/外壳:TO-220-3 包装:管件 描述:TRIAC SENS GATE 600V 6A TO220 分立半导体产品 晶闸管 - TRIAC

ETC

知名厂家

SILICON TRIACS

文件:115.59 Kbytes Page:3 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

SILICON TRIACS

文件:163.44 Kbytes Page:3 Pages

COMSET

SILICON TRIACS

文件:104.51 Kbytes Page:3 Pages

TI

德州仪器

SILICON TRIACS

文件:104.51 Kbytes Page:3 Pages

TI

德州仪器

SILICON TRIACS

文件:163.44 Kbytes Page:3 Pages

COMSET

SILICON TRIACS

文件:115.59 Kbytes Page:3 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

封装/外壳:TO-220-3 包装:管件 描述:TRIAC SENS GATE 700V 6A TO220 分立半导体产品 晶闸管 - TRIAC

ETC

知名厂家

SMALL OUTLINE OPTOISOLATORS TRANSISTOR OUTPUT

Small Outline Optoisolators Transistor Output (Low Input Current) These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high densi

MOTOROLA

摩托罗拉

Silicon PNP epitaxial planer transistor

Transistor array to drive the small motor ■ Features ● Small and lightweight ● Low power consumption (low VCE(sat) transistor used) ● Low-voltage drive ● With 6 elements incorporated. (SO–14) ■ Applications ● Video cameras ● Cameras ● Portable CD players ● Small motor drive circuits in g

PANASONIC

松下

Three quadrant triacs high commutation

文件:44.64 Kbytes Page:4 Pages

PHILIPS

飞利浦

3.0 mm X 7.0 mm Series

文件:32.159 Kbytes Page:1 Pages

PANASONIC

松下

Silicon NPN Transistor High Speed Switch, Core Driver

文件:19.46 Kbytes Page:2 Pages

NTE

TIC216产品属性

  • 类型

    描述

  • 电压 - 断态:

    400V

  • 电流 - 通态(It(RMS))(最大值):

    6A

  • 电压 - 栅极触发(Vgt)(最大值):

    2.2V

  • 电流 - 不重复浪涌 50,60Hz(Itsm):

    60A @ 50Hz

  • 电流 - 栅极触发(Igt)(最大值):

    5mA

  • 电流 - 保持(Ih)(最大值):

    30mA

  • 配置:

    单一

  • 工作温度:

    -40°C ~ 110°C(TC)

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-220-3

  • 供应商器件封装:

    TO-220

更新时间:2026-5-15 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Bourns Inc.
25+
TO-220
7786
正规渠道,免费送样。支持账期,BOM一站式配齐
Bourns Inc.
25+
TO-220
20948
样件支持,可原厂排单订货!
PHI
22+
TO-220
20000
只做原装 品质保障
BOURNS/伯恩斯
20+
TO-220
38560
原装优势主营型号-可开原型号增税票
TI
23+
TO-220
10000
专做原装正品,假一罚百!
BOURNS
1322+
TO-220
18
一级代理,专注军工、汽车、医疗、工业、新能源、电力
BOURNS
25+23+
TO-220
20546
绝对原装正品全新进口深圳现货
BOURNS/伯恩斯
24+
TO-220
47186
郑重承诺只做原装进口现货
POWER
24+
TO-220-3
8866
TI
23+
TO-220
8560
受权代理!全新原装现货特价热卖!

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