SILICON TRIACS

● Sensitive Gate Triacs ● 6 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 5 mA (Quadrants 1 - 3)

SILICON BIDIRECTIONAL TRIODE THYRISTOR

DESCRIPTION This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by either polarity of gate signal with main Terminal 2 at either polarity. • 6 A RMS • Glass Passivated Wafer • 100 V to 800 V Off-State Voltage • Max IGT of 5 mA (Qua

SILICON TRIACS

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Thyristor

SILICON TRIACS

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SILICON TRIACS

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SMALL OUTLINE OPTOISOLATORS TRANSISTOR OUTPUT

Small Outline Optoisolators Transistor Output (Low Input Current) These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic package. They are ideally suited for high densi

Silicon PNP epitaxial planer transistor

Transistor array to drive the small motor ■ Features ● Small and lightweight ● Low power consumption (low VCE(sat) transistor used) ● Low-voltage drive ● With 6 elements incorporated. (SO–14) ■ Applications ● Video cameras ● Cameras ● Portable CD players ● Small motor drive circuits in g

Three quadrant triacs high commutation

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3.0 mm X 7.0 mm Series

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Silicon NPN Transistor High Speed Switch, Core Driver

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