SILICON CONTROLLED RECTIFIERS

12 A Continuous On-State Current 100 A Surge-Current Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 20 mA

P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS

• 12 A Continuous On-State Current • 100 A Surge-Current • Glass Passivated Wafer • 100 V to 800 V Off-State Voltage • Max IGTof 20 mA • Compliance to ROHS

Thyristor

P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS

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isc Thyristors

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12Acontimunous on-state current

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TIRISTORI I TRIJACI

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封装/外壳：TO-220-3 包装：散装 描述：SCR 600V 12A TO220 分立半导体产品 晶闸管 - SCR

TIC126 SERIES SILICON CONTROLLED RECTIFIERS

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N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and designed for use as a line interrupter in telephone sets and for application in relay, high-speed and line-transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switc

Germanium Mesa Transistor, PNP, for High-Speed Switching Applications

Germanium Mesa Transistor, PNP, for High–Speed Switching Applications

POWER TRANSISTORS(5.0A,60-100V,65W)

... designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12

Silicon NPN Phototransistor

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