THS789Quad-ChannelTimeMeasurementUnit(TMU)

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封装/外壳：100-TQFP 裸露焊盘 包装：卷带（TR） 描述：IC TIME MEASUREMNT UNIT 100HTQFP 集成电路（IC） 应用特定时钟/定时

ComplementaryPlasticSiliconPowerTransistors

...designedforlowpoweraudioamplifierandlow-current,highspeedswitchingapplications. •HighCollector-EmitterSustainingVoltage—VCEO(sus)=80Vdc(Win)—BD789,BD790=100Vdc(Min)—BD791,BD792 •HighDCCurrentGain@IQ=200mAdchpE=40-250 •LowCollector-EmitterSatura

ComplementaryPlasticSiliconPowerTransistors

ComplementaryPlasticSiliconPowerTransistors ...designedforlowpoweraudioamplifierandlow–current,highspeedswitchingapplications. •HighCollector–EmitterSustainingVoltage— VCEO(sus)=80Vdc(Min)—BD789,BD790 =100Vdc(Min)—BD791,BD792 •Hi

PNPSILICONPOWER(SWITCHING)TRANSISTOR

FEATURES *2WPOWERDISSIPATION *8APeakPulseCurrent *ExcellentHFECharacteristicsupto10Amps *LowSaturationVoltageE.g.10mvTyp.

SOT89PNPSILICONPOWER(SWITCHING)TRANSISTOR

Features •BVCEO>-25V •IC=-3AhighContinuousCurrent •ICM=-8APeakPulseCurrent •LowsaturationvoltageVCE(sat)

PNPSiliconPowerSwitchingTransistor

Features ●2Wpowerdissipation. ●8Apeakpulsecurrent. ●ExcellentHFEcharacteristicsupto10Amps. ●ExtremelylowsaturationvoltageE.g.10mvTyp.