WIDEBAND, LOW-DISTORTION, FULLY DIFFERENTIAL AMPLIFIERS

1FEATURES 23· Fully Differential Architecture · Bandwidth: 260 MHz · Slew Rate: 1800 V/ms · IMD 3: .73 dBc at 30 MHz · OIP3: 29 dBm at 30 MHz · Output Common-Mode Control · Wide Power-Supply Voltage Range: 5 V, ±5 V, 12 V, 15 V · Input Common-Mode Range Shifted to Include the Negative Po

WIDEBAND, LOW-DISTORTION, FULLY DIFFERENTIAL AMPLIFIERS

文件：1.0943 Mbytes Page：38 Pages

WIDEBAND, LOW-DISTORTION, FULLY DIFFERENTIAL AMPLIFIERS

文件：1.52778 Mbytes Page：45 Pages

WIDEBAND, LOW-DISTORTION, FULLY DIFFERENTIAL AMPLIFIERS

1FEATURES 23· Fully Differential Architecture · Bandwidth: 260 MHz · Slew Rate: 1800 V/ms · IMD 3: .73 dBc at 30 MHz · OIP3: 29 dBm at 30 MHz · Output Common-Mode Control · Wide Power-Supply Voltage Range: 5 V, ±5 V, 12 V, 15 V · Input Common-Mode Range Shifted to Include the Negative Po

WIDEBAND, LOW-DISTORTION, FULLY DIFFERENTIAL AMPLIFIERS

1FEATURES 23· Fully Differential Architecture · Bandwidth: 260 MHz · Slew Rate: 1800 V/ms · IMD 3: .73 dBc at 30 MHz · OIP3: 29 dBm at 30 MHz · Output Common-Mode Control · Wide Power-Supply Voltage Range: 5 V, ±5 V, 12 V, 15 V · Input Common-Mode Range Shifted to Include the Negative Po

WIDEBAND, LOW-DISTORTION, FULLY DIFFERENTIAL AMPLIFIERS

1FEATURES 23· Fully Differential Architecture · Bandwidth: 260 MHz · Slew Rate: 1800 V/ms · IMD 3: .73 dBc at 30 MHz · OIP3: 29 dBm at 30 MHz · Output Common-Mode Control · Wide Power-Supply Voltage Range: 5 V, ±5 V, 12 V, 15 V · Input Common-Mode Range Shifted to Include the Negative Po

WIDEBAND, LOW-DISTORTION, FULLY DIFFERENTIAL AMPLIFIERS

文件：1.52778 Mbytes Page：45 Pages

WIDEBAND, LOW-DISTORTION, FULLY DIFFERENTIAL AMPLIFIERS

文件：1.52778 Mbytes Page：45 Pages

WIDEBAND, LOW-DISTORTION, FULLY DIFFERENTIAL AMPLIFIERS

文件：1.0943 Mbytes Page：38 Pages

WIDEBAND, LOW-DISTORTION, FULLY DIFFERENTIAL AMPLIFIERS

文件：1.52778 Mbytes Page：45 Pages

64-bit, 1-bit per word random access read/write memory

DESCRIPTION The HEF4505B is a 64-bit, 1-bit per word, fully decoded and completely static, random access memory. The memory is strobed for reading or writing only when the strobe input (ST), chip enable inputs (CE1 and CE2) are HIGH simultaneously.

64-bit, 1-bit per word random access read/write memory

DESCRIPTION The HEF4505B is a 64-bit, 1-bit per word, fully decoded and completely static, random access memory. The memory is strobed for reading or writing only when the strobe input (ST), chip enable inputs (CE1 and CE2) are HIGH simultaneously.

64-bit, 1-bit per word random access read/write memory

DESCRIPTION The HEF4505B is a 64-bit, 1-bit per word, fully decoded and completely static, random access memory. The memory is strobed for reading or writing only when the strobe input (ST), chip enable inputs (CE1 and CE2) are HIGH simultaneously.

NPN epitaxial planer transistor

Silicon NPN epitaxial planar type For general amplification (Tr1) For amplification of low-frequency output (Tr2) ■ Features • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half

Small signal combination IC for colour TV

文件：440 Kbytes Page：15 Pages