丝印代码：4504；WIDEBAND, LOW-DISTORTION, FULLY DIFFERENTIAL AMPLIFIERS

1FEATURES 23· Fully Differential Architecture · Bandwidth: 260 MHz · Slew Rate: 1800 V/ms · IMD 3: .73 dBc at 30 MHz · OIP3: 29 dBm at 30 MHz · Output Common-Mode Control · Wide Power-Supply Voltage Range: 5 V, ±5 V, 12 V, 15 V · Input Common-Mode Range Shifted to Include the Negative Po

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type For amplification of low-frequency output ■ Features • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half

CMOS HEX VOLTAGE-LEVEL SHIFTER FOR TTL-TO-CMOS OR CMOS-TO-CMOS OPERATION

文件：219.24 Kbytes Page：5 Pages

CMOS HEX VOLTAGE-LEVEL SHIFTER FOR TTL-TO-CMOS OR CMOS-TO-CMOS OPERATION

文件：219.24 Kbytes Page：5 Pages

Small signal combination for multistandard colour TV

文件：190.34 Kbytes Page：26 Pages

Small signal combination for multistandard colour TV

文件：190.34 Kbytes Page：26 Pages