NPN SiGe RF TRANSISTOR

□ Features o Low Noise Figure NF = 1.1 dB Typ. @ f = 1 GHz, VCE = 3 V, IC = 5 mA NF = 1.5 dB Typ. @ f = 2 GHz, VCE = 3 V, IC = 5 mA o High Power Gain MAG = 18.5 dB Typ. @ f = 1 GHz, VCE = 3 V, IC = 15 mA 13 dB Typ. @ f = 2 GHz, VCE = 3 V, IC = 15 mA o High Transition

NPN SiGe RF TRANSISTOR

NPN SiGe RF TRANSISTOR

□ Features o Low Noise Figure NF = 1.1 dB Typ. @ f = 1 GHz, VCE = 3 V, IC = 5 mA NF = 1.5 dB Typ. @ f = 2 GHz, VCE = 3 V, IC = 5 mA o High Power Gain MAG = 18.5 dB Typ. @ f = 1 GHz, VCE = 3 V, IC = 15 mA 13 dB Typ. @ f = 2 GHz, VCE = 3 V, IC = 15 mA o High Transition

SiGe NPN Transistor

□ Features o Low Noise Figure NF = 1.1 dB at f = 1 GHz, VCE = 3 V, IC = 5 mA NF = 1.5 dB at f = 2 GHz, VCE = 3 V, IC = 5 mA o High Power Gain MAG = 18.5 dB at f = 1 GHz, VCE = 3 V, IC = 15 mA MAG = 13 dB at f = 1 GHz, VCE = 3 V, IC = 15 mA o High Transition Frequency fT = 12

SiGe NPN Transistor

□ Features o Low Noise Figure NF = 1.1 dB at f = 1 GHz, VCE = 3 V, IC = 5 mA NF = 1.5 dB at f = 2 GHz, VCE = 3 V, IC = 5 mA o High Power Gain MAG = 18.5 dB at f = 1 GHz, VCE = 3 V, IC = 15 mA MAG = 13 dB at f = 1 GHz, VCE = 3 V, IC = 15 mA o High Transition Frequency fT = 12

NPN SiGe RF TRANSISTOR

□ Features o Low Noise Figure NF = 1.1 dB Typ. @ f = 1 GHz, VCE = 3 V, IC = 5 mA NF = 1.5 dB Typ. @ f = 2 GHz, VCE = 3 V, IC = 5 mA o High Power Gain MAG = 18.5 dB Typ. @ f = 1 GHz, VCE = 3 V, IC = 15 mA 13 dB Typ. @ f = 2 GHz, VCE = 3 V, IC = 15 mA o High Transition

SiGe NPN Transistor

□ Features o Low Noise Figure NF = 1.1 dB at f = 1 GHz, VCE = 3 V, IC = 5 mA NF = 1.5 dB at f = 2 GHz, VCE = 3 V, IC = 5 mA o High Power Gain MAG = 18.5 dB at f = 1 GHz, VCE = 3 V, IC = 15 mA MAG = 13 dB at f = 1 GHz, VCE = 3 V, IC = 15 mA o High Transition Frequency fT = 12

NPN SiGe RF TRANSISTOR

□ Features o Low Noise Figure NF = 1.1 dB Typ. @ f = 1 GHz, VCE = 3 V, IC = 5 mA NF = 1.5 dB Typ. @ f = 2 GHz, VCE = 3 V, IC = 5 mA o High Power Gain MAG = 18.5 dB Typ. @ f = 1 GHz, VCE = 3 V, IC = 15 mA 13 dB Typ. @ f = 2 GHz, VCE = 3 V, IC = 15 mA o High Transition

NPN Planer RF TRANSISTOR

□ Features o Low Noise Figure NF = 1.1 dB Typ. @ f = 1 GHz, VCE = 3 V, IC = 5 mA NF = 1.5 dB Typ. @ f = 2 GHz, VCE = 3 V, IC = 5 mA o High Power Gain MAG = 18.5 dB Typ. @ f = 1 GHz, VCE = 3 V, IC = 15 mA 13 dB Typ. @ f = 2 GHz, VCE = 3 V, IC = 15 mA o High Transition

SiGe NPN Transistor

□ Features o Low Noise Figure NF = 1.1 dB at f = 1 GHz, VCE = 3 V, IC = 5 mA NF = 1.5 dB at f = 2 GHz, VCE = 3 V, IC = 5 mA o High Power Gain MAG = 18.5 dB at f = 1 GHz, VCE = 3 V, IC = 15 mA MAG = 13 dB at f = 1 GHz, VCE = 3 V, IC = 15 mA o High Transition Frequency fT = 12

NPN SiGe RF TRANSISTOR

□ Features o Low Noise Figure NF = 1.1 dB Typ. @ f = 1 GHz, VCE = 3 V, IC = 5 mA NF = 1.5 dB Typ. @ f = 2 GHz, VCE = 3 V, IC = 5 mA o High Power Gain MAG = 18.5 dB Typ. @ f = 1 GHz, VCE = 3 V, IC = 15 mA 13 dB Typ. @ f = 2 GHz, VCE = 3 V, IC = 15 mA o High Transition

NPN SiGe RF TRANSISTOR

□ Features o Low Noise Figure NF = 1.1 dB Typ. @ f = 1 GHz, VCE = 3 V, IC = 5 mA NF = 1.5 dB Typ. @ f = 2 GHz, VCE = 3 V, IC = 5 mA o High Power Gain MAG = 18.5 dB Typ. @ f = 1 GHz, VCE = 3 V, IC = 15 mA 13 dB Typ. @ f = 2 GHz, VCE = 3 V, IC = 15 mA o High Transition

SiGe NPN Transistor

□ Features o Low Noise Figure NF = 1.1 dB at f = 1 GHz, VCE = 3 V, IC = 5 mA NF = 1.5 dB at f = 2 GHz, VCE = 3 V, IC = 5 mA o High Power Gain MAG = 18.5 dB at f = 1 GHz, VCE = 3 V, IC = 15 mA MAG = 13 dB at f = 1 GHz, VCE = 3 V, IC = 15 mA o High Transition Frequency fT = 12

SiGe NPN Transistor

NPN Planer RF TRANSISTOR

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