NPN SiGe RF TRANSISTOR

□ Features o Low Noise Figure NF = 1.1 dB Typ. @ f = 1 GHz, VCE = 3 V, IC = 5 mA NF = 1.5 dB Typ. @ f = 2 GHz, VCE = 3 V, IC = 5 mA o High Power Gain MAG = 18.5 dB Typ. @ f = 1 GHz, VCE = 3 V, IC = 15 mA 13 dB Typ. @ f = 2 GHz, VCE = 3 V, IC = 15 mA o High Transition

SiGe NPN Transistor

□ Features o Low Noise Figure NF = 1.1 dB at f = 1 GHz, VCE = 3 V, IC = 5 mA NF = 1.5 dB at f = 2 GHz, VCE = 3 V, IC = 5 mA o High Power Gain MAG = 18.5 dB at f = 1 GHz, VCE = 3 V, IC = 15 mA MAG = 13 dB at f = 1 GHz, VCE = 3 V, IC = 15 mA o High Transition Frequency fT = 12

NPN Planer RF TRANSISTOR

□ Features o Low Noise Figure NF = 1.1 dB Typ. @ f = 1 GHz, VCE = 3 V, IC = 5 mA NF = 1.5 dB Typ. @ f = 2 GHz, VCE = 3 V, IC = 5 mA o High Power Gain MAG = 18.5 dB Typ. @ f = 1 GHz, VCE = 3 V, IC = 15 mA 13 dB Typ. @ f = 2 GHz, VCE = 3 V, IC = 15 mA o High Transition

NPN Planer RF TRANSISTOR

8-BIT MCUs WITH A/D CONVERTER, TWO TIMERS, OSCILLATOR SAFEGUARD & SAFE RESET

INTRODUCTION The ST6200C, 01C and 03C devices are low cost members of the ST62xx 8-bit HCMOS family of microcontrollers, which is targeted at low to medium complexity applications. All ST62xx devices are based on a building block approach: a common core is surrounded by a number of on-chip periph

LOW VOLTAGE 8-BIT ROM MCUs WITH A/D CONVERTER,AND 16 PINS

INTRODUCTION The ST6200C, 01C and 03C devices are low cost members of the ST62xx 8-bit HCMOS family of microcontrollers, which is targeted at low to medium complexity applications. All ST62xx devices are based on a building block approach: a common core is surrounded by a number of on-chip periph

Transmissive Optical Sensor with Schmitt Trigger Logic Output

Description This device consists of a transmissive sensor with a 3-pin connector. The operating wavelength is λ = 950 nm. The detector consists of a photologic-IC with Schmitt trigger output. Features ● Output:    ‘LOW’ when infrared beam is not interrupted ● Inverter-open collector ● TLL co

High Efficiency LED, 5 mm Tinted Non-Diffused Package

文件：130.169 Kbytes Page：9 Pages

GaAlAs Infrared Emitting Diodes in ø 5 mm (T–13/4) Package

文件：87.93 Kbytes Page：6 Pages