SiGe NPN Transistor

□ FEATURES o Low Noise Figure NF = 1.5dB at f = 2 GHz, VCE = 3 V, IC = 5 mA NF = 1.7dB at f = 2 GHz, VCE = 1 V, IC = 3 mA o High Gain MAG = 12.5 dB at f = 2 GHz, VCE = 3 V, IC = 30 mA MAG = 9.5 dB at f = 2 GHz, VCE = 1 V, IC = 7 mA o High Transition Frequency fT = 11 GHz at

GaAlAs Red Light Emitting Diode

GaAlAs Red Light Emitting Diode For optical fiber communications and control systems Features ● Red light emission close to monochromatic light : λP = 680 nm ● High-power output, high-efficiency : PO = 3 mW ● High coupling characteristics and suits to a plastic fiber ● High-speed response :

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type For general amplification ■ Features • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planer transistor For general amplification ■ Features ● Two elements incorporated into one package. ● Reduction of the mounting area and assembly cost by one half.

FAMILY OF SELF-CALIBRATING Self-CalE PRECISION CMOS RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIERS

文件：498.4 Kbytes Page：32 Pages

FAMILY OF SELF-CALIBRATING Self-CalE PRECISION CMOS RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIERS

文件：498.4 Kbytes Page：32 Pages