HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION This devices is manufacturedusing Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The THD series is designed for use in horizontal deflection circuits in televisions and monitors. ■ STMicroelectronic

27W SWITCHING REGULATOR FOR AUTOMOTIVE APPLICATION

DESCRIPTION The GS-R218 is a switching voltage regulator that can deliver an output current of 1,5 A at 18 V when supplied by a car battery. The regulator uses a cigar lighter case with a coiled cord and it is protected against overloads and short circuits at the output (latching overload protec

Thyristors(Silicon Controlled Rectifiers)

. . . designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gate-controlled, solid-state devices are needed. • Glass-Passivated Junctions • Blocking Voltage to 800 Volts • TO-220 Construction —

Silicon PNP Transistor Audio Power Output

Description: The NTE218 is ideal for use as a driver, switch and medium–power amplifier applications. This device features: Features: • Low Saturation Voltage – 0.6VCE(sat) @ IC = 1A • High Gain Characteristics – hFE @ IC = 250mA: 30–100 • Excellent Safe Area Limits

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

Operational Amplifiers

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