1.2mm Discrete HFET

DESCRIPTION The Triquint TGF4230 - EEU is a single gate 1.2 mm Discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high- efficiency power applications up to 1 2- GHz in Class A and Class AB operation. Bond- pad and backside metalization is gold plated for compatibility with

1.2mm Discrete HFET

1.2mm Discrete HFET

DESCRIPTION The Triquint TGF4230 - EEU is a single gate 1.2 mm Discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high- efficiency power applications up to 1 2- GHz in Class A and Class AB operation. Bond- pad and backside metalization is gold plated for compatibility with

DC - 12 GHz Discrete HFET

Description The TriQuint TGF4230-SCC is a single gate 1.2 mm Discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high-efficiency power applications up to 12 GHz in Class A and Class AB operation. Bond-pad and backside metalization is gold plated for compatibility with e

DC - 12 GHz Discrete HFET

文件：226.73 Kbytes Page：9 Pages

1.2mm Discrete HFET

DC - 12 GHz Discrete HFET

DC - 12 GHz Discrete HFET

文件：226.73 Kbytes Page：9 Pages

Dual, High Speed, 2.5V to 12V, Rail-to-Rail Amplifier

Description The FAN4230 is a dual, low cost, high performance, voltage feedback amplifier that consumes only 2.5mA of supply current while providing ±130mA of output short circuit current. The FAN4230 is designed to operate from 2.5V to 12V (±6V) supplies. The common mode voltage range extends

High-Performance T-13/4 (5 mm) TS AlGaAs Infrared (875 nm) Lamp

Description The HSDL-4200 series of emitters are the first in a sequence of emitters that are aimed at high power, low forward voltage, and high speed. These emitters utilize the Transparent Substrate, double heterojunction, Aluminum Gallium Arsenide (TS AlGaAs) LED technology. These devices are

Silicon Power Rectifier

文件：120.31 Kbytes Page：3 Pages

Silicon Power Rectifier

文件：120.31 Kbytes Page：3 Pages