Description

The TriQuint TGF4230-SCC is a single gate 1.2 mm Discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high-efficiency power applications up to 12 GHz in Class A and Class AB operation.

Bond-pad and backside metalization is gold plated for compatibility with eutectic alloy attach methods as well as thermocompression and thermosonic wire-bonding processes.

The TGF4230-SCC is readily assembled using automatic equipment.

For an Application Note on the use of HFETs, refer to the TriQuint website for the Millimeter Wave Division.

Key Features and Performance

• Nominal Pout of 28.5 dBm at 8.5 GHz

• Nominal Gain of 10.0 dB at 8.5 GHz

• Nominal PAE of 55 at 8.5 GHz

• 1200 µm HFET

• 0.61 x 0.74 x 0.1 mm (0.024 x 0.029 x 0.004 in)

• Bias at 8 Volts, 96 mA

Primary Applications

• Cellular Base Stations

• High dynamic-range LNAs

• Military and Space