TGF价格

参考价格:¥72.7915

型号:TGF120K 品牌:FerriShield 备注:这里有TGF多少钱,2025年最近7天走势,今日出价,今日竞价,TGF批发/采购报价,TGF行情走势销售排行榜,TGF报价。
型号 功能描述 生产厂家&企业 LOGO 操作
TGF

包装:散装 描述:BUSS HEAT LIMITER 电路保护 电气专用保险丝

ETC

知名厂家

Discrete MESFET

Description TheTriQuintTGF1350-SCCisasingle-gateGaAsfield-effecttransistor(FET)usedforlow-noiseapplicationsDCto18GHz.Bondpadisgoldplatedforcompatibilitywiththermocompressionandthermosoniccompatibilitywire-bondingprocesses.TheTGF1350-SCCisreadilyassembledusing

TriQuint

TriQuint Semiconductor

TriQuint

Discrete MESFET

Description TheTriQuintTGF1350-SCCisasingle-gateGaAsfield-effecttransistor(FET)usedforlow-noiseapplicationsDCto18GHz.Bondpadisgoldplatedforcompatibilitywiththermocompressionandthermosoniccompatibilitywire-bondingprocesses.TheTGF1350-SCCisreadilyassembledusing

TriQuint

TriQuint Semiconductor

TriQuint

DC-12 GHz Discrete Power pHEMT

ProductDescription TheTriQuintTGF2021-01isadiscrete1mmpHEMTwhichoperatesfromDC-12GHz.TheTGF2021-01isdesignedusingTriQuint’sprovenstandard0.35umpowerpHEMTproductionprocess. TheTGF2021-01typicallyprovides>30dBmofsaturatedoutputpowerwithpowergainof11dB.Th

TriQuint

TriQuint Semiconductor

TriQuint

DC - 12 GHz Discrete power pHEMT

ProductDescription TheTriQuintTGF2021-02isadiscrete2mmpHEMTwhichoperatesfromDC-12GHz.TheTGF2021-02isdesignedusingTriQuint’sprovenstandard0.35umpowerpHEMTproductionprocess. TheTGF2021-02typicallyprovides>33dBmofsaturatedoutputpowerwithpowergainof11dB.T

TriQuint

TriQuint Semiconductor

TriQuint

DC - 12 GHz Discrete power pHEMT

ProductDescription TheTriQuintTGF2021-04isadiscrete4mmpHEMTwhichoperatesfromDC-12GHz.TheTGF2021-04isdesignedusingTriQuint’sprovenstandard0.35umpowerpHEMTproductionprocess. TheTGF2021-04typicallyprovides>36dBmofsaturatedoutputpowerwithpowergainof11dB.Th

TriQuint

TriQuint Semiconductor

TriQuint

DC - 12 GHz Discrete power pHEMT

ProductDescription TheTriQuintTGF2021-08isadiscrete8mmpHEMTwhichoperatesfromDC-12GHz.TheTGF2021-08isdesignedusingTriQuint’sprovenstandard0.35umpowerpHEMTproductionprocess. TheTGF2021-08typicallyprovides>39dBmofsaturatedoutputpowerwithpowergainof11dB.The

MACOMTyco Electronics

玛科姆技术方案控股有限公司

MACOM

DC - 20 GHz Discrete power pHEMT

ProductDescription TheTriQuintTGF2022-12isadiscrete1.2mmpHEMTwhichoperatesfromDC-20GHz.TheTGF2022-12isdesignedusingTriQuint’sprovenstandard0.35umpowerpHEMTproductionprocess. TheTGF2022-12typicallyprovides>31dBmofsaturatedoutputpowerwithpowergainof13dB.

TriQuint

TriQuint Semiconductor

TriQuint

DC - 20 GHz Discrete power pHEMT

ProductDescription TheTriQuintTGF2022-24isadiscrete2.4mmpHEMTwhichoperatesfromDC-20GHz.TheTGF2022-24isdesignedusingTriQuint’sprovenstandard0.35umpowerpHEMTproductionprocess. TheTGF2022-24typicallyprovides>34dBmofsaturatedoutputpowerwithpowergainof13dB.

TriQuint

TriQuint Semiconductor

TriQuint

DC - 20 GHz Discrete power pHEMT

• ProductDescription TheTriQuintTGF2022-48isadiscrete4.8mmpHEMTwhichoperatesfromDC-20GHz.TheTGF2022-48isdesignedusingTriQuint’sprovenstandard0.35umpowerpHEMTproductionprocess. TheTGF2022-48typicallyprovides>37dBmofsaturatedoutputpowerwithpowergainof13d

TriQuint

TriQuint Semiconductor

TriQuint

DC - 20 GHz Discrete power pHEMT

ProductDescription TheTriQuintTGF2022-60isadiscrete6.0mmpHEMTwhichoperatesfromDC-20GHz.TheTGF2022-60isdesignedusingTriQuint’sprovenstandard0.35umpowerpHEMTproductionprocess. TheTGF2022-60typicallyprovides>38dBmofsaturatedoutputpowerwithpowergainof12dB.

TriQuint

TriQuint Semiconductor

TriQuint

25 Watt Discrete Power GaN on SiC HEMT

ProductFeatures FrequencyRange:DC-18GHz 44.3dBmNominalPSATat6GHz 64.4MaximumPAEat6GHz 17.6dBLinearGainat6GHz Bias:VD=12-32V,IDQ=100-250mA Technology:QGaN25onSiC ChipDimensions:0.82x1.44x0.10mm

QORVOQorvo, Inc

威讯联合威讯联合半导体(德州)有限公司

QORVO

DC – 4 GHz, 50 V, 200 W GaN RF Transistor

KeyFeatures Frequency:DCto4GHz OutputPower(P3dB)1:257W LinearGain1:18dB TypicalPAE3dB 1:67.5 OperatingVoltage:50V CWandPulsecapable Note1:@3GHzLoadPull

QORVOQorvo, Inc

威讯联合威讯联合半导体(德州)有限公司

QORVO

DC – 4 GHz, 50 V, 200 W GaN RF Transistor

KeyFeatures Frequency:DCto4GHz OutputPower(P3dB)1:257W LinearGain1:18dB TypicalPAE3dB 1:67.5 OperatingVoltage:50V CWandPulsecapable Note1:@3GHzLoadPull

QORVOQorvo, Inc

威讯联合威讯联合半导体(德州)有限公司

QORVO

DC – 4 GHz, 50 V, 200 W GaN RF Transistor

KeyFeatures Frequency:DCto4GHz OutputPower(P3dB)1:257W LinearGain1:18dB TypicalPAE3dB 1:67.5 OperatingVoltage:50V CWandPulsecapable Note1:@3GHzLoadPull

QORVOQorvo, Inc

威讯联合威讯联合半导体(德州)有限公司

QORVO

4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor

KeyFeatures Frequency:4to6GHz OutputPower(P3dB)1:6.8W LinearGain1:13dB TypicalPAE3dB 1:60 OperatingVoltage:32V CWandPulsecapable

QORVOQorvo, Inc

威讯联合威讯联合半导体(德州)有限公司

QORVO

4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor

KeyFeatures Frequency:4to6GHz OutputPower(P3dB)1:6.8W LinearGain1:13dB TypicalPAE3dB 1:60 OperatingVoltage:32V CWandPulsecapable

QORVOQorvo, Inc

威讯联合威讯联合半导体(德州)有限公司

QORVO

4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor

KeyFeatures Frequency:4to6GHz OutputPower(P3dB)1:6.8W LinearGain1:13dB TypicalPAE3dB 1:60 OperatingVoltage:32V CWandPulsecapable

QORVOQorvo, Inc

威讯联合威讯联合半导体(德州)有限公司

QORVO

4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor

KeyFeatures Frequency:4to6GHz OutputPower(P3dB)1:6.8W LinearGain1:13dB TypicalPAE3dB 1:60 OperatingVoltage:32V CWandPulsecapable

QORVOQorvo, Inc

威讯联合威讯联合半导体(德州)有限公司

QORVO

12 mm Discrete HFET

12mmDiscreteHFET •0.5umgatefingerlength •NominalPoutof6.0Wattsat2.3GHz •NominalPAEof54.5at2.3GHz •NominalGainof12.7dBat2.3GHz •Diesize36.0x81.0x4.0mils(0.914x2.057x0.102mm)

TriQuint

TriQuint Semiconductor

TriQuint

12 mm Discrete HFET

12mmDiscreteHFET •0.5umgatefingerlength •NominalPoutof6.0Wattsat2.3GHz •NominalPAEof54.5at2.3GHz •NominalGainof12.7dBat2.3GHz •Diesize36.0x81.0x4.0mils(0.914x2.057x0.102mm)

TriQuint

TriQuint Semiconductor

TriQuint

18 mm Discrete HFET

18mmDiscreteHFET •0.5umgatefingerlength •NominalPoutof9.0Wattsat2.3GHz •NominalPAEof53at2.3GHz •NominalGainof11.5dBat2.3GHz •DieSize36.0x81.0x4.0mils(0.914x2.057x0.102mm)

TriQuint

TriQuint Semiconductor

TriQuint

18 mm Discrete HFET

18mmDiscreteHFET •0.5umgatefingerlength •NominalPoutof9.0Wattsat2.3GHz •NominalPAEof53at2.3GHz •NominalGainof11.5dBat2.3GHz •DieSize36.0x81.0x4.0mils(0.914x2.057x0.102mm)

TriQuint

TriQuint Semiconductor

TriQuint

24 mm Discrete HFET

24mmDiscreteHFET •0.5umgatefingerlength •NominalPoutof12Wattsat2.3GHz •NominalPAEof51.5at2.3GHz •NominalGainof10.8dBat2.3GHz •Diesize36.0x81.0x4.0mils(0.914x2.057x0.102mm)

TriQuint

TriQuint Semiconductor

TriQuint

24 mm Discrete HFET

24mmDiscreteHFET •0.5umgatefingerlength •NominalPoutof12Wattsat2.3GHz •NominalPAEof51.5at2.3GHz •NominalGainof10.8dBat2.3GHz •Diesize36.0x81.0x4.0mils(0.914x2.057x0.102mm)

TriQuint

TriQuint Semiconductor

TriQuint

1.2mm Discrete HFET

DESCRIPTION TheTriquintTGF4230-EEUisasinglegate1.2mmDiscreteGaAsHeterostructureFieldEffectTransistor(HFET)designedforhigh-efficiencypowerapplicationsupto12-GHzinClassAandClassABoperation. Bond-padandbacksidemetalizationisgoldplatedforcompatibilitywith

TriQuint

TriQuint Semiconductor

TriQuint

1.2mm Discrete HFET

DESCRIPTION TheTriquintTGF4230-EEUisasinglegate1.2mmDiscreteGaAsHeterostructureFieldEffectTransistor(HFET)designedforhigh-efficiencypowerapplicationsupto12-GHzinClassAandClassABoperation. Bond-padandbacksidemetalizationisgoldplatedforcompatibilitywith

TriQuint

TriQuint Semiconductor

TriQuint

DC - 12 GHz Discrete HFET

Description TheTriQuintTGF4230-SCCisasinglegate1.2mmDiscreteGaAsHeterostructureFieldEffectTransistor(HFET)designedforhigh-efficiencypowerapplicationsupto12GHzinClassAandClassABoperation. Bond-padandbacksidemetalizationisgoldplatedforcompatibilitywithe

TriQuint

TriQuint Semiconductor

TriQuint

2.4mm Discrete HFET

●2400mx0.5m ●NominalPoutof31.5-dBmat8.5GHz ●NominalGainof10-dBat8.5GHz ●NominalPAEof56at8.5GHz ●Suitableforhighreliabilityapplications ●0,572x0,978x0,102mm (0.023x0.039x0.004in.)

TriQuint

TriQuint Semiconductor

TriQuint

2.4mm Discrete HFET

●2400mx0.5m ●NominalPoutof31.5-dBmat8.5GHz ●NominalGainof10-dBat8.5GHz ●NominalPAEof56at8.5GHz ●Suitableforhighreliabilityapplications ●0,572x0,978x0,102mm (0.023x0.039x0.004in.)

TriQuint

TriQuint Semiconductor

TriQuint

2.4 mm Discrete HFET

DESCRIPTION TheTriQuintTGF4240-SCCisasinglegate2.4mmDiscreteGaAsHeterostructureFieldEffectTransistor(HFET)designedforhigh-efficiencypowerapplicationsupto12GHzinClassAandClassABoperation. Typicalperformanceat8.5GHzis31.5dBmpoweroutput,10dBGain,and56PA

TriQuint

TriQuint Semiconductor

TriQuint

4.8 mm Discrete HFET

Description TheTriQuintTGF4250-SCCisasinglegate4.8mmdiscreteGaAsHeterostructureFieldEffectTransistor(HFET)designedforhighefficiencypowerapplicationsupto10.5GHzinClassAandClassABoperation.Typicalperformanceat2GHzis34dBmpoweroutput,13dBgain,and53PAE

TriQuint

TriQuint Semiconductor

TriQuint

4.8 mm Discrete HFET

Description TheTriQuintTGF4250-SCCisasinglegate4.8mmdiscreteGaAsHeterostructureFieldEffectTransistor(HFET)designedforhighefficiencypowerapplicationsupto10.5GHzinClassAandClassABoperation.Typicalperformanceat2GHzis34dBmpoweroutput,13dBgain,and53PAE

TriQuint

TriQuint Semiconductor

TriQuint

DC - 10.5 GHz Discrete HFET

Description TheTriQuintTGF4250-SCCisasinglegate4.8mmdiscreteGaAsHeterostructureFieldEffectTransistor(HFET)designedforhighefficiencypowerapplicationsupto10.5GHzinClassAandClassABoperation.Typicalperformanceat2GHzis34dBmpoweroutput,13dBgain,and53PAE

TriQuint

TriQuint Semiconductor

TriQuint

9.6mm Discrete HFET

9.6mmDiscreteHFET ●9600mx0.5m ●NominalPoutof37-dBmat6.0GHz ●NominalGainof9.5-dBat6.0GHz ●NominalPAEof52at6.0GHz ●Suitableforhighreliabilityapplications ●0,572x2,324x0,102mm(0.023x0.092x0.004in.)

TriQuint

TriQuint Semiconductor

TriQuint

9.6mm Discrete HFET

9.6mmDiscreteHFET ●9600mx0.5m ●NominalPoutof37-dBmat6.0GHz ●NominalGainof9.5-dBat6.0GHz ●NominalPAEof52at6.0GHz ●Suitableforhighreliabilityapplications ●0,572x2,324x0,102mm(0.023x0.092x0.004in.)

TriQuint

TriQuint Semiconductor

TriQuint

9.6 mm Discrete HFET

Description TheTriQuintTGF4260-SCCisasinglegate9.6mmdiscreteGaAsHeterostructureFieldEffectTransistor(HFET)designedforhighefficiencypowerapplicationsupto10.5GHzinClassAandClassABoperation. KeyFeaturesandPerformance •9600µmx0.5µmHFET •NominalPoutof37d

TriQuint

TriQuint Semiconductor

TriQuint

300um Discrete pHEMT

KeyFeaturesandPerformance •0.25umpHEMTTechnology •DC22GHzFrequencyRange •1.2dBNF,14.5dBAssociatedGainat10GHz,3VOperation •FloatingSourceConfiguration •ChipDimensions0.620mmx0.514mm PrimaryApplications •LowNoiseamplifiers

TriQuint

TriQuint Semiconductor

TriQuint

300um Discrete pHEMT

KeyFeaturesandPerformance •0.25umpHEMTTechnology •DC22GHzFrequencyRange •1.2dBNF,14.5dBAssociatedGainat10GHz,3VOperation •FloatingSourceConfiguration •ChipDimensions0.620mmx0.514mm PrimaryApplications •LowNoiseamplifiers

TriQuint

TriQuint Semiconductor

TriQuint

包装:盒 描述:THERM PAD 199.9MMX199.9MM GRAY 风扇,热管理 热 - 垫,片

Leader

Leader Tech Inc.

Leader

Discrete MESFET

文件:121.39 Kbytes Page:7 Pages

TriQuint

TriQuint Semiconductor

TriQuint

Discrete MESFET

文件:121.39 Kbytes Page:7 Pages

TriQuint

TriQuint Semiconductor

TriQuint

180 um Discrete GaAs pHEMT

文件:245.3 Kbytes Page:8 Pages

TriQuint

TriQuint Semiconductor

TriQuint

180 um Discrete GaAs pHEMT

文件:245.3 Kbytes Page:8 Pages

TriQuint

TriQuint Semiconductor

TriQuint

DC - 12 GHz Discrete power pHEMT

文件:151.19 Kbytes Page:8 Pages

TriQuint

TriQuint Semiconductor

TriQuint

DC - 12 GHz Discrete power pHEMT

文件:151.19 Kbytes Page:8 Pages

TriQuint

TriQuint Semiconductor

TriQuint

DC - 12 GHz Discrete power pHEMT

文件:149.52 Kbytes Page:8 Pages

TriQuint

TriQuint Semiconductor

TriQuint

DC - 20 GHz Discrete power pHEMT

文件:219.3 Kbytes Page:10 Pages

TriQuint

TriQuint Semiconductor

TriQuint

6 Watt Discrete Power GaN on SiC HEMT

文件:445.78 Kbytes Page:8 Pages

TriQuint

TriQuint Semiconductor

TriQuint

6 Watt Discrete Power GaN on SiC HEMT

文件:780.01 Kbytes Page:13 Pages

TriQuint

TriQuint Semiconductor

TriQuint

6 Watt Discrete Power GaN on SiC HEMT

文件:780.01 Kbytes Page:13 Pages

TriQuint

TriQuint Semiconductor

TriQuint

12 Watt Discrete Power GaN on SiC HEMT

文件:222.71 Kbytes Page:7 Pages

TriQuint

TriQuint Semiconductor

TriQuint

12 Watt Discrete Power GaN on SiC HEMT

文件:196.81 Kbytes Page:9 Pages

TriQuint

TriQuint Semiconductor

TriQuint

12 Watt Discrete Power GaN on SiC HEMT

文件:196.81 Kbytes Page:9 Pages

TriQuint

TriQuint Semiconductor

TriQuint

25 Watt Discrete Power GaN on SiC HEMT

文件:221.82 Kbytes Page:7 Pages

TriQuint

TriQuint Semiconductor

TriQuint

25 Watt Discrete Power GaNon SiCHEMT

文件:199.23 Kbytes Page:9 Pages

TriQuint

TriQuint Semiconductor

TriQuint

25 Watt Discrete Power GaNon SiCHEMT

文件:199.23 Kbytes Page:9 Pages

TriQuint

TriQuint Semiconductor

TriQuint

50 Watt Discrete Power GaN on SiC HEMT

文件:221.99 Kbytes Page:7 Pages

TriQuint

TriQuint Semiconductor

TriQuint

50 Watt Discrete Power GaN on SiC HEMT

文件:200.41 Kbytes Page:9 Pages

TriQuint

TriQuint Semiconductor

TriQuint

50 Watt Discrete Power GaN on SiC HEMT

文件:200.41 Kbytes Page:9 Pages

TriQuint

TriQuint Semiconductor

TriQuint

TGF产品属性

  • 类型

    描述

  • 型号

    TGF

  • 功能描述

    导热接口产品 Thermal Gap Fill Pad

  • RoHS

  • 制造商

    Panasonic Electronic Components

  • 类型

    Thermal Graphite Sheets

  • 材料

    Graphite Polymer Film

  • 长度

    180 mm

  • 宽度

    115 mm

  • 厚度

    0.07 mm

更新时间:2025-7-15 12:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TRIQUINT
24+
SOT-89
18560
假一赔十全新原装现货特价供应工厂客户可放款
QORVO
24+
NA
5000
全新原装正品,现货销售
ST
2511
SCR
16900
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
Qorvo
22+
QFN-16
1200
只做原装,假一罚十价格低。
TRIQUINTSEMI
05+
原厂原装
8452
只做全新原装真实现货供应
TRIQUINT
24+
SOT-89
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
TriQuint
21+
SOT-89
1328
原装现货假一赔十
TRIQUINT
638
原装正品
TRIQUIN
20+
N/A
29516
高频管全新原装主营-可开原型号增税票
TRIQUIN
24+
SOT-89
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增

TGF芯片相关品牌

  • BANNER
  • CHEMI-CON
  • CTMICRO
  • JUXING
  • LINER
  • MCC
  • Microchip
  • MINMAX
  • NEL
  • ROHM
  • SANYO
  • SEOUL

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