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TGF价格
参考价格:¥72.7915
型号:TGF120K 品牌:FerriShield 备注:这里有TGF多少钱,2025年最近7天走势,今日出价,今日竞价,TGF批发/采购报价,TGF行情走势销售排行榜,TGF报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
TGF | 包装:散装 描述:BUSS HEAT LIMITER 电路保护 电气专用保险丝 | ETC 知名厂家 | ETC | |
Discrete MESFET Description TheTriQuintTGF1350-SCCisasingle-gateGaAsfield-effecttransistor(FET)usedforlow-noiseapplicationsDCto18GHz.Bondpadisgoldplatedforcompatibilitywiththermocompressionandthermosoniccompatibilitywire-bondingprocesses.TheTGF1350-SCCisreadilyassembledusing | TriQuint TriQuint Semiconductor | |||
Discrete MESFET Description TheTriQuintTGF1350-SCCisasingle-gateGaAsfield-effecttransistor(FET)usedforlow-noiseapplicationsDCto18GHz.Bondpadisgoldplatedforcompatibilitywiththermocompressionandthermosoniccompatibilitywire-bondingprocesses.TheTGF1350-SCCisreadilyassembledusing | TriQuint TriQuint Semiconductor | |||
DC-12 GHz Discrete Power pHEMT ProductDescription TheTriQuintTGF2021-01isadiscrete1mmpHEMTwhichoperatesfromDC-12GHz.TheTGF2021-01isdesignedusingTriQuint’sprovenstandard0.35umpowerpHEMTproductionprocess. TheTGF2021-01typicallyprovides>30dBmofsaturatedoutputpowerwithpowergainof11dB.Th | TriQuint TriQuint Semiconductor | |||
DC - 12 GHz Discrete power pHEMT ProductDescription TheTriQuintTGF2021-02isadiscrete2mmpHEMTwhichoperatesfromDC-12GHz.TheTGF2021-02isdesignedusingTriQuint’sprovenstandard0.35umpowerpHEMTproductionprocess. TheTGF2021-02typicallyprovides>33dBmofsaturatedoutputpowerwithpowergainof11dB.T | TriQuint TriQuint Semiconductor | |||
DC - 12 GHz Discrete power pHEMT ProductDescription TheTriQuintTGF2021-04isadiscrete4mmpHEMTwhichoperatesfromDC-12GHz.TheTGF2021-04isdesignedusingTriQuint’sprovenstandard0.35umpowerpHEMTproductionprocess. TheTGF2021-04typicallyprovides>36dBmofsaturatedoutputpowerwithpowergainof11dB.Th | TriQuint TriQuint Semiconductor | |||
DC - 12 GHz Discrete power pHEMT ProductDescription TheTriQuintTGF2021-08isadiscrete8mmpHEMTwhichoperatesfromDC-12GHz.TheTGF2021-08isdesignedusingTriQuint’sprovenstandard0.35umpowerpHEMTproductionprocess. TheTGF2021-08typicallyprovides>39dBmofsaturatedoutputpowerwithpowergainof11dB.The | MACOMTyco Electronics 玛科姆技术方案控股有限公司 | |||
DC - 20 GHz Discrete power pHEMT ProductDescription TheTriQuintTGF2022-12isadiscrete1.2mmpHEMTwhichoperatesfromDC-20GHz.TheTGF2022-12isdesignedusingTriQuint’sprovenstandard0.35umpowerpHEMTproductionprocess. TheTGF2022-12typicallyprovides>31dBmofsaturatedoutputpowerwithpowergainof13dB. | TriQuint TriQuint Semiconductor | |||
DC - 20 GHz Discrete power pHEMT ProductDescription TheTriQuintTGF2022-24isadiscrete2.4mmpHEMTwhichoperatesfromDC-20GHz.TheTGF2022-24isdesignedusingTriQuint’sprovenstandard0.35umpowerpHEMTproductionprocess. TheTGF2022-24typicallyprovides>34dBmofsaturatedoutputpowerwithpowergainof13dB. | TriQuint TriQuint Semiconductor | |||
DC - 20 GHz Discrete power pHEMT • ProductDescription TheTriQuintTGF2022-48isadiscrete4.8mmpHEMTwhichoperatesfromDC-20GHz.TheTGF2022-48isdesignedusingTriQuint’sprovenstandard0.35umpowerpHEMTproductionprocess. TheTGF2022-48typicallyprovides>37dBmofsaturatedoutputpowerwithpowergainof13d | TriQuint TriQuint Semiconductor | |||
DC - 20 GHz Discrete power pHEMT ProductDescription TheTriQuintTGF2022-60isadiscrete6.0mmpHEMTwhichoperatesfromDC-20GHz.TheTGF2022-60isdesignedusingTriQuint’sprovenstandard0.35umpowerpHEMTproductionprocess. TheTGF2022-60typicallyprovides>38dBmofsaturatedoutputpowerwithpowergainof12dB. | TriQuint TriQuint Semiconductor | |||
25 Watt Discrete Power GaN on SiC HEMT ProductFeatures FrequencyRange:DC-18GHz 44.3dBmNominalPSATat6GHz 64.4MaximumPAEat6GHz 17.6dBLinearGainat6GHz Bias:VD=12-32V,IDQ=100-250mA Technology:QGaN25onSiC ChipDimensions:0.82x1.44x0.10mm | QORVOQorvo, Inc 威讯联合威讯联合半导体(德州)有限公司 | |||
DC – 4 GHz, 50 V, 200 W GaN RF Transistor KeyFeatures Frequency:DCto4GHz OutputPower(P3dB)1:257W LinearGain1:18dB TypicalPAE3dB 1:67.5 OperatingVoltage:50V CWandPulsecapable Note1:@3GHzLoadPull | QORVOQorvo, Inc 威讯联合威讯联合半导体(德州)有限公司 | |||
DC – 4 GHz, 50 V, 200 W GaN RF Transistor KeyFeatures Frequency:DCto4GHz OutputPower(P3dB)1:257W LinearGain1:18dB TypicalPAE3dB 1:67.5 OperatingVoltage:50V CWandPulsecapable Note1:@3GHzLoadPull | QORVOQorvo, Inc 威讯联合威讯联合半导体(德州)有限公司 | |||
DC – 4 GHz, 50 V, 200 W GaN RF Transistor KeyFeatures Frequency:DCto4GHz OutputPower(P3dB)1:257W LinearGain1:18dB TypicalPAE3dB 1:67.5 OperatingVoltage:50V CWandPulsecapable Note1:@3GHzLoadPull | QORVOQorvo, Inc 威讯联合威讯联合半导体(德州)有限公司 | |||
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor KeyFeatures Frequency:4to6GHz OutputPower(P3dB)1:6.8W LinearGain1:13dB TypicalPAE3dB 1:60 OperatingVoltage:32V CWandPulsecapable | QORVOQorvo, Inc 威讯联合威讯联合半导体(德州)有限公司 | |||
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor KeyFeatures Frequency:4to6GHz OutputPower(P3dB)1:6.8W LinearGain1:13dB TypicalPAE3dB 1:60 OperatingVoltage:32V CWandPulsecapable | QORVOQorvo, Inc 威讯联合威讯联合半导体(德州)有限公司 | |||
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor KeyFeatures Frequency:4to6GHz OutputPower(P3dB)1:6.8W LinearGain1:13dB TypicalPAE3dB 1:60 OperatingVoltage:32V CWandPulsecapable | QORVOQorvo, Inc 威讯联合威讯联合半导体(德州)有限公司 | |||
4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor KeyFeatures Frequency:4to6GHz OutputPower(P3dB)1:6.8W LinearGain1:13dB TypicalPAE3dB 1:60 OperatingVoltage:32V CWandPulsecapable | QORVOQorvo, Inc 威讯联合威讯联合半导体(德州)有限公司 | |||
12 mm Discrete HFET 12mmDiscreteHFET •0.5umgatefingerlength •NominalPoutof6.0Wattsat2.3GHz •NominalPAEof54.5at2.3GHz •NominalGainof12.7dBat2.3GHz •Diesize36.0x81.0x4.0mils(0.914x2.057x0.102mm) | TriQuint TriQuint Semiconductor | |||
12 mm Discrete HFET 12mmDiscreteHFET •0.5umgatefingerlength •NominalPoutof6.0Wattsat2.3GHz •NominalPAEof54.5at2.3GHz •NominalGainof12.7dBat2.3GHz •Diesize36.0x81.0x4.0mils(0.914x2.057x0.102mm) | TriQuint TriQuint Semiconductor | |||
18 mm Discrete HFET 18mmDiscreteHFET •0.5umgatefingerlength •NominalPoutof9.0Wattsat2.3GHz •NominalPAEof53at2.3GHz •NominalGainof11.5dBat2.3GHz •DieSize36.0x81.0x4.0mils(0.914x2.057x0.102mm) | TriQuint TriQuint Semiconductor | |||
18 mm Discrete HFET 18mmDiscreteHFET •0.5umgatefingerlength •NominalPoutof9.0Wattsat2.3GHz •NominalPAEof53at2.3GHz •NominalGainof11.5dBat2.3GHz •DieSize36.0x81.0x4.0mils(0.914x2.057x0.102mm) | TriQuint TriQuint Semiconductor | |||
24 mm Discrete HFET 24mmDiscreteHFET •0.5umgatefingerlength •NominalPoutof12Wattsat2.3GHz •NominalPAEof51.5at2.3GHz •NominalGainof10.8dBat2.3GHz •Diesize36.0x81.0x4.0mils(0.914x2.057x0.102mm) | TriQuint TriQuint Semiconductor | |||
24 mm Discrete HFET 24mmDiscreteHFET •0.5umgatefingerlength •NominalPoutof12Wattsat2.3GHz •NominalPAEof51.5at2.3GHz •NominalGainof10.8dBat2.3GHz •Diesize36.0x81.0x4.0mils(0.914x2.057x0.102mm) | TriQuint TriQuint Semiconductor | |||
1.2mm Discrete HFET DESCRIPTION TheTriquintTGF4230-EEUisasinglegate1.2mmDiscreteGaAsHeterostructureFieldEffectTransistor(HFET)designedforhigh-efficiencypowerapplicationsupto12-GHzinClassAandClassABoperation. Bond-padandbacksidemetalizationisgoldplatedforcompatibilitywith | TriQuint TriQuint Semiconductor | |||
1.2mm Discrete HFET DESCRIPTION TheTriquintTGF4230-EEUisasinglegate1.2mmDiscreteGaAsHeterostructureFieldEffectTransistor(HFET)designedforhigh-efficiencypowerapplicationsupto12-GHzinClassAandClassABoperation. Bond-padandbacksidemetalizationisgoldplatedforcompatibilitywith | TriQuint TriQuint Semiconductor | |||
DC - 12 GHz Discrete HFET Description TheTriQuintTGF4230-SCCisasinglegate1.2mmDiscreteGaAsHeterostructureFieldEffectTransistor(HFET)designedforhigh-efficiencypowerapplicationsupto12GHzinClassAandClassABoperation. Bond-padandbacksidemetalizationisgoldplatedforcompatibilitywithe | TriQuint TriQuint Semiconductor | |||
2.4mm Discrete HFET ●2400mx0.5m ●NominalPoutof31.5-dBmat8.5GHz ●NominalGainof10-dBat8.5GHz ●NominalPAEof56at8.5GHz ●Suitableforhighreliabilityapplications ●0,572x0,978x0,102mm (0.023x0.039x0.004in.) | TriQuint TriQuint Semiconductor | |||
2.4mm Discrete HFET ●2400mx0.5m ●NominalPoutof31.5-dBmat8.5GHz ●NominalGainof10-dBat8.5GHz ●NominalPAEof56at8.5GHz ●Suitableforhighreliabilityapplications ●0,572x0,978x0,102mm (0.023x0.039x0.004in.) | TriQuint TriQuint Semiconductor | |||
2.4 mm Discrete HFET DESCRIPTION TheTriQuintTGF4240-SCCisasinglegate2.4mmDiscreteGaAsHeterostructureFieldEffectTransistor(HFET)designedforhigh-efficiencypowerapplicationsupto12GHzinClassAandClassABoperation. Typicalperformanceat8.5GHzis31.5dBmpoweroutput,10dBGain,and56PA | TriQuint TriQuint Semiconductor | |||
4.8 mm Discrete HFET Description TheTriQuintTGF4250-SCCisasinglegate4.8mmdiscreteGaAsHeterostructureFieldEffectTransistor(HFET)designedforhighefficiencypowerapplicationsupto10.5GHzinClassAandClassABoperation.Typicalperformanceat2GHzis34dBmpoweroutput,13dBgain,and53PAE | TriQuint TriQuint Semiconductor | |||
4.8 mm Discrete HFET Description TheTriQuintTGF4250-SCCisasinglegate4.8mmdiscreteGaAsHeterostructureFieldEffectTransistor(HFET)designedforhighefficiencypowerapplicationsupto10.5GHzinClassAandClassABoperation.Typicalperformanceat2GHzis34dBmpoweroutput,13dBgain,and53PAE | TriQuint TriQuint Semiconductor | |||
DC - 10.5 GHz Discrete HFET Description TheTriQuintTGF4250-SCCisasinglegate4.8mmdiscreteGaAsHeterostructureFieldEffectTransistor(HFET)designedforhighefficiencypowerapplicationsupto10.5GHzinClassAandClassABoperation.Typicalperformanceat2GHzis34dBmpoweroutput,13dBgain,and53PAE | TriQuint TriQuint Semiconductor | |||
9.6mm Discrete HFET 9.6mmDiscreteHFET ●9600mx0.5m ●NominalPoutof37-dBmat6.0GHz ●NominalGainof9.5-dBat6.0GHz ●NominalPAEof52at6.0GHz ●Suitableforhighreliabilityapplications ●0,572x2,324x0,102mm(0.023x0.092x0.004in.) | TriQuint TriQuint Semiconductor | |||
9.6mm Discrete HFET 9.6mmDiscreteHFET ●9600mx0.5m ●NominalPoutof37-dBmat6.0GHz ●NominalGainof9.5-dBat6.0GHz ●NominalPAEof52at6.0GHz ●Suitableforhighreliabilityapplications ●0,572x2,324x0,102mm(0.023x0.092x0.004in.) | TriQuint TriQuint Semiconductor | |||
9.6 mm Discrete HFET Description TheTriQuintTGF4260-SCCisasinglegate9.6mmdiscreteGaAsHeterostructureFieldEffectTransistor(HFET)designedforhighefficiencypowerapplicationsupto10.5GHzinClassAandClassABoperation. KeyFeaturesandPerformance •9600µmx0.5µmHFET •NominalPoutof37d | TriQuint TriQuint Semiconductor | |||
300um Discrete pHEMT KeyFeaturesandPerformance •0.25umpHEMTTechnology •DC22GHzFrequencyRange •1.2dBNF,14.5dBAssociatedGainat10GHz,3VOperation •FloatingSourceConfiguration •ChipDimensions0.620mmx0.514mm PrimaryApplications •LowNoiseamplifiers | TriQuint TriQuint Semiconductor | |||
300um Discrete pHEMT KeyFeaturesandPerformance •0.25umpHEMTTechnology •DC22GHzFrequencyRange •1.2dBNF,14.5dBAssociatedGainat10GHz,3VOperation •FloatingSourceConfiguration •ChipDimensions0.620mmx0.514mm PrimaryApplications •LowNoiseamplifiers | TriQuint TriQuint Semiconductor | |||
包装:盒 描述:THERM PAD 199.9MMX199.9MM GRAY 风扇,热管理 热 - 垫,片 | Leader Leader Tech Inc. | |||
Discrete MESFET 文件:121.39 Kbytes Page:7 Pages | TriQuint TriQuint Semiconductor | |||
Discrete MESFET 文件:121.39 Kbytes Page:7 Pages | TriQuint TriQuint Semiconductor | |||
180 um Discrete GaAs pHEMT 文件:245.3 Kbytes Page:8 Pages | TriQuint TriQuint Semiconductor | |||
180 um Discrete GaAs pHEMT 文件:245.3 Kbytes Page:8 Pages | TriQuint TriQuint Semiconductor | |||
DC - 12 GHz Discrete power pHEMT 文件:151.19 Kbytes Page:8 Pages | TriQuint TriQuint Semiconductor | |||
DC - 12 GHz Discrete power pHEMT 文件:151.19 Kbytes Page:8 Pages | TriQuint TriQuint Semiconductor | |||
DC - 12 GHz Discrete power pHEMT 文件:149.52 Kbytes Page:8 Pages | TriQuint TriQuint Semiconductor | |||
DC - 20 GHz Discrete power pHEMT 文件:219.3 Kbytes Page:10 Pages | TriQuint TriQuint Semiconductor | |||
6 Watt Discrete Power GaN on SiC HEMT 文件:445.78 Kbytes Page:8 Pages | TriQuint TriQuint Semiconductor | |||
6 Watt Discrete Power GaN on SiC HEMT 文件:780.01 Kbytes Page:13 Pages | TriQuint TriQuint Semiconductor | |||
6 Watt Discrete Power GaN on SiC HEMT 文件:780.01 Kbytes Page:13 Pages | TriQuint TriQuint Semiconductor | |||
12 Watt Discrete Power GaN on SiC HEMT 文件:222.71 Kbytes Page:7 Pages | TriQuint TriQuint Semiconductor | |||
12 Watt Discrete Power GaN on SiC HEMT 文件:196.81 Kbytes Page:9 Pages | TriQuint TriQuint Semiconductor | |||
12 Watt Discrete Power GaN on SiC HEMT 文件:196.81 Kbytes Page:9 Pages | TriQuint TriQuint Semiconductor | |||
25 Watt Discrete Power GaN on SiC HEMT 文件:221.82 Kbytes Page:7 Pages | TriQuint TriQuint Semiconductor | |||
25 Watt Discrete Power GaNon SiCHEMT 文件:199.23 Kbytes Page:9 Pages | TriQuint TriQuint Semiconductor | |||
25 Watt Discrete Power GaNon SiCHEMT 文件:199.23 Kbytes Page:9 Pages | TriQuint TriQuint Semiconductor | |||
50 Watt Discrete Power GaN on SiC HEMT 文件:221.99 Kbytes Page:7 Pages | TriQuint TriQuint Semiconductor | |||
50 Watt Discrete Power GaN on SiC HEMT 文件:200.41 Kbytes Page:9 Pages | TriQuint TriQuint Semiconductor | |||
50 Watt Discrete Power GaN on SiC HEMT 文件:200.41 Kbytes Page:9 Pages | TriQuint TriQuint Semiconductor |
TGF产品属性
- 类型
描述
- 型号
TGF
- 功能描述
导热接口产品 Thermal Gap Fill Pad
- RoHS
否
- 制造商
Panasonic Electronic Components
- 类型
Thermal Graphite Sheets
- 材料
Graphite Polymer Film
- 长度
180 mm
- 宽度
115 mm
- 厚度
0.07 mm
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
TRIQUINT |
24+ |
SOT-89 |
18560 |
假一赔十全新原装现货特价供应工厂客户可放款 |
|||
QORVO |
24+ |
NA |
5000 |
全新原装正品,现货销售 |
|||
ST |
2511 |
SCR |
16900 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
Qorvo |
22+ |
QFN-16 |
1200 |
只做原装,假一罚十价格低。 |
|||
TRIQUINTSEMI |
05+ |
原厂原装 |
8452 |
只做全新原装真实现货供应 |
|||
TRIQUINT |
24+ |
SOT-89 |
20000 |
全新原厂原装,进口正品现货,正规渠道可含税!! |
|||
TriQuint |
21+ |
SOT-89 |
1328 |
原装现货假一赔十 |
|||
TRIQUINT |
638 |
原装正品 |
|||||
TRIQUIN |
20+ |
N/A |
29516 |
高频管全新原装主营-可开原型号增税票 |
|||
TRIQUIN |
24+ |
SOT-89 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
TGF规格书下载地址
TGF参数引脚图相关
- u300
- u202
- u1205
- t触发器
- type-c
- tx20
- ttl电平
- ttl电路
- tsmc
- tsl2561
- tsl230
- tr100
- tps61200
- tmds
- tm7705
- tl7705
- tl494
- tl431
- tip127
- tip122
- TGF4250
- TGF4240
- TGF4230
- TGF4124
- TGF4118
- TGF4112
- TGF2957
- TGF2956
- TGF2955
- TGF2954
- TGF2953
- TGF2952
- TGF2819-FL
- TGF28119-FS-EVB1
- TGF280L
- TGF2160
- TGF2120
- TGF2080
- TGF2060
- TGF2040
- TGF2025
- TGF2023-2-02
- TGF2023-2-01
- TGF2022-60
- TGF2022-24
- TGF2022-12
- TGF2022-06
- TGF2021-08
- TGF2021-04
- TGF2021-01
- TGF2018
- TGF150D
- TGF1350
- TGF120K
- TGECEI
- TGDC501-TB-B
- TGD9A
- TGD8A
- TGD7A
- TGD6A
- TGD5A
- TGD50
- TGD4A
- TGD40A
- TGD-3A
- TGD3A
- TGD39A
- TGD38A
- TGD37A
- TGD36A
- TGD35A
- TGD34A
- TGD33A
- TGD32A
- TGD31A
- TGD30A
- TGD0501TBB
- TG-CPCB3-LI98-0.15
- TG-CPCB3
- TG-CPCB2-LI98-0.15
- TG-CPCB2
- TG-CPCB1-LI98-0.15
- TG-CPCB1
- TGC4403-SM
- TGC4403
- TGC175-28
- TGC175-24
- TGC175-230
- TGC175-10
- TGC1430F
- TGC130-24
- TGC130-20
- TGC130-16
- TGC130-10
TGF数据表相关新闻
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GaN射频放大器,GaN射频放大器,30dBm射频放大器
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2020-11-25TGM-240NS
型号:TGM-240NS 厂商:HALO 封装:SOP6 联系人:陈先生电话:18018738768(微信同号) QQ:1005525513 我司有一手货源,价优,可以长期提供大量,优质的货源,专业的渠道,物美价廉是公司与客户之间共同的理念 深圳市弘扬盛电子专业经销网络滤波器,网络变压器,RJ45网络连接器系列,USB连接器系列,RJ11插座系类,
2020-4-13
DdatasheetPDF页码索引
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