Wideband Driver Amplifier

Key Features and Performance • Two Stage Driver Amplifier • 0.25µm pHEMT 2MI Technology • 8-18 GHz Frequency Range • 13 dBm Nominal Pout • 17 dB Nominal Gain • Balanced In/Out for Low VSWR • 4.5V @ 50mA Self Bias • Chip Dimensions: 3.5mm x 2.4mm x 0.1 mm Primary Applications • X

Wideband Driver Amplifier

6-13 GHz Low Noise Amplifier

Key Features and Performance • 3 Stage LNA 0.25um pHEMT Technology • 6-13 GHz Frequency Range • 1.75 dB Typical Noise Figure Midband • 25 dB Nominal Gain • High Input Power Handling: ~ 20dBm • Balanced Input for Low VSWR • 5V @ 65mA Self Bias Primary Applications • Point-to-Point

6-13 GHz Low Noise Amplifier

Key Features and Performance • 3 Stage LNA 0.25um pHEMT Technology • 6-13 GHz Frequency Range • 1.75 dB Typical Noise Figure Midband • 25 dB Nominal Gain • High Input Power Handling: ~ 20dBm • Balanced Input for Low VSWR • 5V @ 65mA Self Bias Primary Applications • Point-to-Point

6-13 GHz Low Noise Amplifier

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Wire-Thread-Inserts

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13 watt; pin-based Compact Fluorescent; 2700K; 82 CRI; GX24q-1 (4-Pin) base

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