12-19 GHz VSAT Amplifier

Key Features • 0.50 um pHEMT Technology • 30 dB Nominal Gain • 30 dBm P1dB @ 15 GHz • Bias Conditions: 7 V, 433 mA • Chip Dimensions: 2.1 x 1.1 x 0.1 mm Primary Applications • VSAT Ground Terminals • Point to Point Radio • Military Ku Band

Ku Band HPA

Ku-Band VSAT Packaged Amplifier

Key Features • Typical Frequency Range: 12 - 19 GHz • 25 dB Nominal Gain • 29 dBm Nominal P1dB • Bias Conditions: 7 V, 433 mA • PHEMT Technology • Low cost true surface mount package • Package Dimensions: 4.0 x 4.0 x 0.9 mm (0.157 x 0.157 x 0.035 in) Primary Applications • VSAT Gr

Ku-Band VSAT Packaged Amplifier

Silicon Diffused Power Transistor

GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base dri

Cable Plug acc. to DIN EN 175301 - 803, Form A

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Lowpass Filter

文件：23.42 Kbytes Page：2 Pages

CAPTIVE PANEL SCREWS

文件：395.93 Kbytes Page：1 Pages

Silicon Diffused Power Transistor

文件：71.46 Kbytes Page：7 Pages