2.5A Fast Recovery Rectifier

Features • Low forward voltage drop • High current capability • High reliability • High surge current capability • High temperature soldering guaranteed: 250°C/10 seconds /.0375 (9.5mm) lead length, 5lbs (2.3kg) tension • RoHS Compliance

N-Channel JFET

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2.5A Fast Recovery Rectifier

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Electret Condenser Microphone Applications

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N-Channel JFET

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N-Channel JFET

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封装/外壳：SOT-1123 包装：散装 描述：JFET N-CH 1MA 30MW USFP 分立半导体产品 晶体管 - JFET

封装/外壳：SOT-1123 包装：散装 描述：JFET N-CH 1MA 30MW USFP 分立半导体产品 晶体管 - JFET

N-Channel JFET

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Electret Condenser Microphone Applications

N-Channel JFET

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Electret Condenser Microphone Applications

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N-Channel JFET

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N-Channel JFET

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N-Channel JFET

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PNP video transistors

DESCRIPTION PNP video transistor in a SOT223 plastic package. NPN complements: BFQ236 and BFQ236A. FEATURES • High breakdown voltages • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability • Surface mounting. APPLICATION

SMALL OUTLINE OPTOISOLATORS AC INPUT TRANSISTOR OUTPUT

The MOC256 is an AC input phototransistor optocoupler. The device consists of two infrared emitters connected in anti–parallel and coupled to a silicon NPN phototransistor detector. They are designed for applications requiring the detection or monitoring of AC signals. These devices are constructe

Silicon NPN Transistor Darlington w/Damper Diode

Description: The NTE256 is a silicon epitaxial planer NPN Darlington transistor in a TO218 type package with an integrated Base–Emitter speed–up diode. This device is particularly suitable for use as an output stage in high power, fast switching applications.

SILICON TRIACS

SILICON TRIACS ● High Current Triacs ● 20 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 150 A Peak Current ● Max IGT of 50 mA (Quadrants 1 - 3)

SILICON TRIACS

SILICON TRIACS ● High Current Triacs ● 20 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 150 A Peak Current ● Max IGT of 50 mA (Quadrants 1 - 3)