P-Channel Enhancement Mode Power MOSFET

Description The TF1216 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -12V,ID = -16A RDS(ON TYP) 12mΩ @ VGS=-4.

Multi-channel data acquisition

Up to 16 unipolar analog input channels Up to 12-bit resolution with 0.5 accuracy Up to 4 software configurable digital output lines Up to 1 MS/s sample rate USB connected and powered Complete with ready-to-go data logging software Includes API and examples for C/C++/C#, VB, LabVIEW VIs

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