N-CHANNEL ENHANCEMENT MODE POWER MOSFET

● General Description The TF050N04N uses advanced trench technology and design to provide excellent RDS(ON) withlowgate charge. It can be used in a wide variety ofapplications. ● Features Advance device constructure Low RDS(ON) to minimize conduction loss Low Gate Charge for fast switching

场效应管(MOSFET)

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

● General Description The TF050N04M combines advanced trench MOSFETtechnology with a low resistance package to provideextremely low RDS(ON) .This device is ideal for load switchand battery protection applications. ● Features Advance high cell densityTrench technology Low RDS(ON) to minimiz

OptiMOS?? Power-Transistor

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OptiMOS?? Power-Transistor

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