位置:首页 > IC中文资料第12814页 > TE28F320
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
TE28F320 | 3 Volt Advanced Boot Block Flash Memory This datasheet contains the specifications for the 3 Volt Advanced Boot Block flash memory family, which is optimized for low power, portable systems. | INTEL 英特尔 | ||
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY INTRODUCTION This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and e | INTEL 英特尔 | |||
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY INTRODUCTION This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and e | INTEL 英特尔 | |||
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY INTRODUCTION This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and e | INTEL 英特尔 | |||
3 Volt Advanced Boot Block Flash Memory This datasheet contains the specifications for the 3 Volt Advanced Boot Block flash memory family, which is optimized for low power, portable systems. | INTEL 英特尔 | |||
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY INTRODUCTION This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and e | INTEL 英特尔 | |||
3 Volt Advanced Boot Block Flash Memory This datasheet contains the specifications for the 3 Volt Advanced Boot Block flash memory family, which is optimized for low power, portable systems. | INTEL 英特尔 | |||
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY INTRODUCTION This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and e | INTEL 英特尔 | |||
3 Volt Advanced Boot Block Flash Memory This datasheet contains the specifications for the 3 Volt Advanced Boot Block flash memory family, which is optimized for low power, portable systems. | INTEL 英特尔 | |||
3 Volt Advanced Boot Block Flash Memory This datasheet contains the specifications for the 3 Volt Advanced Boot Block flash memory family, which is optimized for low power, portable systems. | INTEL 英特尔 | |||
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY INTRODUCTION This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and e | INTEL 英特尔 | |||
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY INTRODUCTION This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and e | INTEL 英特尔 | |||
3 Volt Advanced Boot Block Flash Memory This datasheet contains the specifications for the 3 Volt Advanced Boot Block flash memory family, which is optimized for low power, portable systems. | INTEL 英特尔 | |||
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY INTRODUCTION This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and e | INTEL 英特尔 | |||
3 Volt Advanced Boot Block Flash Memory This datasheet contains the specifications for the 3 Volt Advanced Boot Block flash memory family, which is optimized for low power, portable systems. | INTEL 英特尔 | |||
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY INTRODUCTION This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and e | INTEL 英特尔 | |||
3 Volt Advanced Boot Block Flash Memory This datasheet contains the specifications for the 3 Volt Advanced Boot Block flash memory family, which is optimized for low power, portable systems. | INTEL 英特尔 | |||
3 Volt Advanced Boot Block Flash Memory This datasheet contains the specifications for the 3 Volt Advanced Boot Block flash memory family, which is optimized for low power, portable systems. | INTEL 英特尔 | |||
3 Volt Intel Advanced Boot Block Flash Memory Device Description This section provides an overview of the Intel® Advanced+ Boot Block Flash Memory (C3) device features, packaging, signal naming, and device architecture. Product Overview The C3 device provides high-performance asynchronous reads in package-compatible densities with a 16 bit | INTEL 英特尔 | |||
3 VOLT ADVANCED BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible | INTEL 英特尔 | |||
3 VOLT ADVANCED BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible | INTEL 英特尔 | |||
Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible | INTEL 英特尔 | |||
Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible | INTEL 英特尔 | |||
Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible | INTEL 英特尔 | |||
Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible | INTEL 英特尔 | |||
Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible | INTEL 英特尔 | |||
Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible | INTEL 英特尔 | |||
3 VOLT ADVANCED BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible | INTEL 英特尔 | |||
3 VOLT ADVANCED BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible | INTEL 英特尔 | |||
Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible | INTEL 英特尔 | |||
Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible | INTEL 英特尔 | |||
Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible | INTEL 英特尔 | |||
Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible | INTEL 英特尔 | |||
Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible | INTEL 英特尔 | |||
Advanced Boot Block Flash Memory (C3) The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible | INTEL 英特尔 | |||
Numonyx??Embedded Flash Memory (J3 v. D) Introduction This document contains information pertaining to the Numonyx™ Embedded Flash Memory (J3 v D) device features, operation, and specifications. Product Features ■ Architecture — Symmetrical 128-Kbyte blocks — 256 Mbit (256 blocks) — 128 Mbit (128 blocks) — 64 Mbit | NUMONYX | |||
WORD-WIDE FlashFile MEMORY FAMILY INTRODUCTION This datasheet contains 16- and 32-Mbit WordWide FlashFileTM memory (28F160S3 and 28F320S3) specifications. Section 1 provides a flash memory overview. Sections 2, 3, 4, and 5 describe the memory organization and functionality. Section 6 covers electrical specifications for extended | INTEL 英特尔 | |||
WORD-WIDE FlashFile MEMORY FAMILY INTRODUCTION This datasheet contains 16- and 32-Mbit WordWide FlashFileTM memory (28F160S3 and 28F320S3) specifications. Section 1 provides a flash memory overview. Sections 2, 3, 4, and 5 describe the memory organization and functionality. Section 6 covers electrical specifications for extended | INTEL 英特尔 | |||
封装/外壳:48-TFSOP(0.724",18.40mm 宽) 包装:管件 描述:IC FLSH 32MBIT PARALLEL 48TSOP I 集成电路(IC) 存储器 | ETC 知名厂家 | ETC | ||
Intel StrataFlash Memory (J3) 文件:905.78 Kbytes Page:72 Pages | INTEL 英特尔 | |||
Intel StrataFlash Memory (J3) 文件:905.78 Kbytes Page:72 Pages | INTEL 英特尔 | |||
Intel StrataFlash Memory (J3) 文件:905.78 Kbytes Page:72 Pages | INTEL 英特尔 | |||
Intel StrataFlash Memory (J3) 文件:905.78 Kbytes Page:72 Pages | INTEL 英特尔 | |||
Intel StrataFlash Memory (J3) 文件:905.78 Kbytes Page:72 Pages | INTEL 英特尔 | |||
Intel StrataFlash Memory (J3) 文件:905.78 Kbytes Page:72 Pages | INTEL 英特尔 | |||
Intel StrataFlash Memory (J3) 文件:905.78 Kbytes Page:72 Pages | INTEL 英特尔 | |||
Intel StrataFlash짰 Memory 文件:990.7 Kbytes Page:72 Pages | INTEL 英特尔 | |||
Intel StrataFlash Memory (J3) 文件:905.78 Kbytes Page:72 Pages | INTEL 英特尔 | |||
Intel StrataFlash Memory (J3) 文件:905.78 Kbytes Page:72 Pages | INTEL 英特尔 | |||
Intel StrataFlash Memory (J3) 文件:905.78 Kbytes Page:72 Pages | INTEL 英特尔 | |||
Intel StrataFlash Memory (J3) 文件:905.78 Kbytes Page:72 Pages | INTEL 英特尔 | |||
封装/外壳:56-TFSOP(0.724",18.40mm 宽) 包装:卷带(TR) 描述:IC FLASH 32MBIT PARALLEL 56TSOP 集成电路(IC) 存储器 | ETC 知名厂家 | ETC | ||
Parallel NOR Flash | MICRON 美光 | |||
Parallel NOR Flash | MICRON 美光 | |||
Parallel NOR Flash | MICRON 美光 | |||
32M (x16) Flash Memory 32Mbit (2Mbit×16) Page Mode Dual Work Flash MEMORY The product, which is 4-Plane Page Mode Dual Work (Simultaneous Read while Erase/Program) Flash memory, is a low power, high density, low cost, nonvolatile read/write storage solution for a wide range of applications. The product can operate at V | SHARPSharp Corporation 夏普 | |||
32M (x16) Flash Memory 32Mbit (2Mbit×16) Page Mode Dual Work Flash MEMORY The product, which is 4-Plane Page Mode Dual Work (Simultaneous Read while Erase/Program) Flash memory, is a low power, high density, low cost, nonvolatile read/write storage solution for a wide range of applications. The product can operate at V | SHARPSharp Corporation 夏普 | |||
32M (x16) Flash Memory 32Mbit (2Mbit×16) Page Mode Dual Work Flash MEMORY The product, which is 4-Plane Page Mode Dual Work (Simultaneous Read while Erase/Program) Flash memory, is a low power, high density, low cost, nonvolatile read/write storage solution for a wide range of applications. The product can operate at V | SHARPSharp Corporation 夏普 | |||
32M (x16) Flash Memory The product, which is 4-Plane Page Mode Dual Work (Simultaneous Read while Erase/Program) Flash memory, is a low power, high density, low cost, nonvolatile read/write storage solution for a wide range of applications. The product can operate at VCC=2.7V-3.6V and VPP=1.65V-3.6V or 11.7V-12.3V. Its | SHARPSharp Corporation 夏普 |
TE28F320产品属性
- 类型
描述
- 型号
TE28F320
- 制造商
INTEL
- 制造商全称
Intel Corporation
- 功能描述
3 Volt Advanced Boot Block Flash Memory
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INTEL |
14+ |
TSOP |
9860 |
大量原装进口现货,一手货源,一站式服务,可开17%增 |
|||
MICRON/美光 |
25+ |
N/A |
12496 |
MICRON/美光原装正品TE28F320J3D75A即刻询购立享优惠#长期有货 |
|||
INTEL(英特尔) |
24+ |
标准封装 |
15298 |
原厂渠道供应,大量现货,原型号开票。 |
|||
INTEL |
2023+ |
TSOP |
53500 |
正品,原装现货 |
|||
INTEL/英特尔 |
1047+ |
明嘉莱只做原装正品现货 |
2510000 |
TSOP56 |
|||
INTEL/英特尔 |
25+ |
TSOP |
20000 |
原装 |
|||
INTEL/英特尔 |
2025+ |
TSOP |
5000 |
原装进口,免费送样品! |
|||
INTEL |
2025+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
INTEL |
24+ |
TSSOP |
20000 |
原厂原装,正品现货,假一罚十 |
|||
INT |
24+ |
TSOP-48 |
7150 |
绝对原装现货,价格低,欢迎询购! |
TE28F320规格书下载地址
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2013-3-6
DdatasheetPDF页码索引
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