位置:首页 > IC中文资料第12814页 > TE28F320
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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TE28F320 | 3VoltAdvancedBootBlockFlashMemory Thisdatasheetcontainsthespecificationsforthe3VoltAdvancedBootBlockflashmemoryfamily,whichisoptimizedforlowpower,portablesystems. | IntelIntel Corporation(Integrated Electronics Corporation) 英特尔英特尔(集成电子公司) | ||
SMART3ADVANCEDBOOTBLOCK4-,8-,16-,32-MBITFLASHMEMORYFAMILY INTRODUCTION ThisdatasheetcontainsthespecificationsfortheAdvancedBootBlockflashmemoryfamily,whichisoptimizedforlowpower,portablesystems.Thisfamilyofproductsfeatures1.65V–2.5Vor2.7V–3.6VI/OsandalowVCC/VPPoperatingrangeof2.7V–3.6Vforread,program,ande | IntelIntel Corporation(Integrated Electronics Corporation) 英特尔英特尔(集成电子公司) | |||
SMART3ADVANCEDBOOTBLOCK4-,8-,16-,32-MBITFLASHMEMORYFAMILY INTRODUCTION ThisdatasheetcontainsthespecificationsfortheAdvancedBootBlockflashmemoryfamily,whichisoptimizedforlowpower,portablesystems.Thisfamilyofproductsfeatures1.65V–2.5Vor2.7V–3.6VI/OsandalowVCC/VPPoperatingrangeof2.7V–3.6Vforread,program,ande | IntelIntel Corporation(Integrated Electronics Corporation) 英特尔英特尔(集成电子公司) | |||
SMART3ADVANCEDBOOTBLOCK4-,8-,16-,32-MBITFLASHMEMORYFAMILY INTRODUCTION ThisdatasheetcontainsthespecificationsfortheAdvancedBootBlockflashmemoryfamily,whichisoptimizedforlowpower,portablesystems.Thisfamilyofproductsfeatures1.65V–2.5Vor2.7V–3.6VI/OsandalowVCC/VPPoperatingrangeof2.7V–3.6Vforread,program,ande | IntelIntel Corporation(Integrated Electronics Corporation) 英特尔英特尔(集成电子公司) | |||
3VoltAdvancedBootBlockFlashMemory Thisdatasheetcontainsthespecificationsforthe3VoltAdvancedBootBlockflashmemoryfamily,whichisoptimizedforlowpower,portablesystems. | IntelIntel Corporation(Integrated Electronics Corporation) 英特尔英特尔(集成电子公司) | |||
SMART3ADVANCEDBOOTBLOCK4-,8-,16-,32-MBITFLASHMEMORYFAMILY INTRODUCTION ThisdatasheetcontainsthespecificationsfortheAdvancedBootBlockflashmemoryfamily,whichisoptimizedforlowpower,portablesystems.Thisfamilyofproductsfeatures1.65V–2.5Vor2.7V–3.6VI/OsandalowVCC/VPPoperatingrangeof2.7V–3.6Vforread,program,ande | IntelIntel Corporation(Integrated Electronics Corporation) 英特尔英特尔(集成电子公司) | |||
3VoltAdvancedBootBlockFlashMemory Thisdatasheetcontainsthespecificationsforthe3VoltAdvancedBootBlockflashmemoryfamily,whichisoptimizedforlowpower,portablesystems. | IntelIntel Corporation(Integrated Electronics Corporation) 英特尔英特尔(集成电子公司) | |||
SMART3ADVANCEDBOOTBLOCK4-,8-,16-,32-MBITFLASHMEMORYFAMILY INTRODUCTION ThisdatasheetcontainsthespecificationsfortheAdvancedBootBlockflashmemoryfamily,whichisoptimizedforlowpower,portablesystems.Thisfamilyofproductsfeatures1.65V–2.5Vor2.7V–3.6VI/OsandalowVCC/VPPoperatingrangeof2.7V–3.6Vforread,program,ande | IntelIntel Corporation(Integrated Electronics Corporation) 英特尔英特尔(集成电子公司) | |||
3VoltAdvancedBootBlockFlashMemory Thisdatasheetcontainsthespecificationsforthe3VoltAdvancedBootBlockflashmemoryfamily,whichisoptimizedforlowpower,portablesystems. | IntelIntel Corporation(Integrated Electronics Corporation) 英特尔英特尔(集成电子公司) | |||
3VoltAdvancedBootBlockFlashMemory Thisdatasheetcontainsthespecificationsforthe3VoltAdvancedBootBlockflashmemoryfamily,whichisoptimizedforlowpower,portablesystems. | IntelIntel Corporation(Integrated Electronics Corporation) 英特尔英特尔(集成电子公司) | |||
SMART3ADVANCEDBOOTBLOCK4-,8-,16-,32-MBITFLASHMEMORYFAMILY INTRODUCTION ThisdatasheetcontainsthespecificationsfortheAdvancedBootBlockflashmemoryfamily,whichisoptimizedforlowpower,portablesystems.Thisfamilyofproductsfeatures1.65V–2.5Vor2.7V–3.6VI/OsandalowVCC/VPPoperatingrangeof2.7V–3.6Vforread,program,ande | IntelIntel Corporation(Integrated Electronics Corporation) 英特尔英特尔(集成电子公司) | |||
SMART3ADVANCEDBOOTBLOCK4-,8-,16-,32-MBITFLASHMEMORYFAMILY INTRODUCTION ThisdatasheetcontainsthespecificationsfortheAdvancedBootBlockflashmemoryfamily,whichisoptimizedforlowpower,portablesystems.Thisfamilyofproductsfeatures1.65V–2.5Vor2.7V–3.6VI/OsandalowVCC/VPPoperatingrangeof2.7V–3.6Vforread,program,ande | IntelIntel Corporation(Integrated Electronics Corporation) 英特尔英特尔(集成电子公司) | |||
3VoltAdvancedBootBlockFlashMemory Thisdatasheetcontainsthespecificationsforthe3VoltAdvancedBootBlockflashmemoryfamily,whichisoptimizedforlowpower,portablesystems. | IntelIntel Corporation(Integrated Electronics Corporation) 英特尔英特尔(集成电子公司) | |||
SMART3ADVANCEDBOOTBLOCK4-,8-,16-,32-MBITFLASHMEMORYFAMILY INTRODUCTION ThisdatasheetcontainsthespecificationsfortheAdvancedBootBlockflashmemoryfamily,whichisoptimizedforlowpower,portablesystems.Thisfamilyofproductsfeatures1.65V–2.5Vor2.7V–3.6VI/OsandalowVCC/VPPoperatingrangeof2.7V–3.6Vforread,program,ande | IntelIntel Corporation(Integrated Electronics Corporation) 英特尔英特尔(集成电子公司) | |||
3VoltAdvancedBootBlockFlashMemory Thisdatasheetcontainsthespecificationsforthe3VoltAdvancedBootBlockflashmemoryfamily,whichisoptimizedforlowpower,portablesystems. | IntelIntel Corporation(Integrated Electronics Corporation) 英特尔英特尔(集成电子公司) | |||
SMART3ADVANCEDBOOTBLOCK4-,8-,16-,32-MBITFLASHMEMORYFAMILY INTRODUCTION ThisdatasheetcontainsthespecificationsfortheAdvancedBootBlockflashmemoryfamily,whichisoptimizedforlowpower,portablesystems.Thisfamilyofproductsfeatures1.65V–2.5Vor2.7V–3.6VI/OsandalowVCC/VPPoperatingrangeof2.7V–3.6Vforread,program,ande | IntelIntel Corporation(Integrated Electronics Corporation) 英特尔英特尔(集成电子公司) | |||
3VoltAdvancedBootBlockFlashMemory Thisdatasheetcontainsthespecificationsforthe3VoltAdvancedBootBlockflashmemoryfamily,whichisoptimizedforlowpower,portablesystems. | IntelIntel Corporation(Integrated Electronics Corporation) 英特尔英特尔(集成电子公司) | |||
3VoltAdvancedBootBlockFlashMemory Thisdatasheetcontainsthespecificationsforthe3VoltAdvancedBootBlockflashmemoryfamily,whichisoptimizedforlowpower,portablesystems. | IntelIntel Corporation(Integrated Electronics Corporation) 英特尔英特尔(集成电子公司) | |||
3VoltIntelAdvancedBootBlockFlashMemory DeviceDescription ThissectionprovidesanoverviewoftheIntel®Advanced+BootBlockFlashMemory(C3)devicefeatures,packaging,signalnaming,anddevicearchitecture. ProductOverview TheC3deviceprovideshigh-performanceasynchronousreadsinpackage-compatibledensitieswitha16bit | IntelIntel Corporation(Integrated Electronics Corporation) 英特尔英特尔(集成电子公司) | |||
3VOLTADVANCEDBOOTBLOCK8-,16-,32-MBITFLASHMEMORYFAMILY The0.25µm3VoltAdvanced+BootBlock,manufacturedonIntel’slatest0.25µtechnology,representsafeature-richsolutionatoveralllowersystemcost.Smart3flashmemorydevicesincorporatelowvoltagecapability(2.7Vread,programanderase)withhigh-speed,low-poweroperation.Flexible | IntelIntel Corporation(Integrated Electronics Corporation) 英特尔英特尔(集成电子公司) | |||
3VOLTADVANCEDBOOTBLOCK8-,16-,32-MBITFLASHMEMORYFAMILY The0.25µm3VoltAdvanced+BootBlock,manufacturedonIntel’slatest0.25µtechnology,representsafeature-richsolutionatoveralllowersystemcost.Smart3flashmemorydevicesincorporatelowvoltagecapability(2.7Vread,programanderase)withhigh-speed,low-poweroperation.Flexible | IntelIntel Corporation(Integrated Electronics Corporation) 英特尔英特尔(集成电子公司) | |||
AdvancedBootBlockFlashMemory(C3) The0.25µm3VoltAdvanced+BootBlock,manufacturedonIntel’slatest0.25µtechnology,representsafeature-richsolutionatoveralllowersystemcost.Smart3flashmemorydevicesincorporatelowvoltagecapability(2.7Vread,programanderase)withhigh-speed,low-poweroperation.Flexible | IntelIntel Corporation(Integrated Electronics Corporation) 英特尔英特尔(集成电子公司) | |||
AdvancedBootBlockFlashMemory(C3) The0.25µm3VoltAdvanced+BootBlock,manufacturedonIntel’slatest0.25µtechnology,representsafeature-richsolutionatoveralllowersystemcost.Smart3flashmemorydevicesincorporatelowvoltagecapability(2.7Vread,programanderase)withhigh-speed,low-poweroperation.Flexible | IntelIntel Corporation(Integrated Electronics Corporation) 英特尔英特尔(集成电子公司) | |||
AdvancedBootBlockFlashMemory(C3) The0.25µm3VoltAdvanced+BootBlock,manufacturedonIntel’slatest0.25µtechnology,representsafeature-richsolutionatoveralllowersystemcost.Smart3flashmemorydevicesincorporatelowvoltagecapability(2.7Vread,programanderase)withhigh-speed,low-poweroperation.Flexible | IntelIntel Corporation(Integrated Electronics Corporation) 英特尔英特尔(集成电子公司) | |||
AdvancedBootBlockFlashMemory(C3) The0.25µm3VoltAdvanced+BootBlock,manufacturedonIntel’slatest0.25µtechnology,representsafeature-richsolutionatoveralllowersystemcost.Smart3flashmemorydevicesincorporatelowvoltagecapability(2.7Vread,programanderase)withhigh-speed,low-poweroperation.Flexible | IntelIntel Corporation(Integrated Electronics Corporation) 英特尔英特尔(集成电子公司) | |||
AdvancedBootBlockFlashMemory(C3) The0.25µm3VoltAdvanced+BootBlock,manufacturedonIntel’slatest0.25µtechnology,representsafeature-richsolutionatoveralllowersystemcost.Smart3flashmemorydevicesincorporatelowvoltagecapability(2.7Vread,programanderase)withhigh-speed,low-poweroperation.Flexible | IntelIntel Corporation(Integrated Electronics Corporation) 英特尔英特尔(集成电子公司) | |||
AdvancedBootBlockFlashMemory(C3) The0.25µm3VoltAdvanced+BootBlock,manufacturedonIntel’slatest0.25µtechnology,representsafeature-richsolutionatoveralllowersystemcost.Smart3flashmemorydevicesincorporatelowvoltagecapability(2.7Vread,programanderase)withhigh-speed,low-poweroperation.Flexible | IntelIntel Corporation(Integrated Electronics Corporation) 英特尔英特尔(集成电子公司) | |||
3VOLTADVANCEDBOOTBLOCK8-,16-,32-MBITFLASHMEMORYFAMILY The0.25µm3VoltAdvanced+BootBlock,manufacturedonIntel’slatest0.25µtechnology,representsafeature-richsolutionatoveralllowersystemcost.Smart3flashmemorydevicesincorporatelowvoltagecapability(2.7Vread,programanderase)withhigh-speed,low-poweroperation.Flexible | IntelIntel Corporation(Integrated Electronics Corporation) 英特尔英特尔(集成电子公司) | |||
3VOLTADVANCEDBOOTBLOCK8-,16-,32-MBITFLASHMEMORYFAMILY The0.25µm3VoltAdvanced+BootBlock,manufacturedonIntel’slatest0.25µtechnology,representsafeature-richsolutionatoveralllowersystemcost.Smart3flashmemorydevicesincorporatelowvoltagecapability(2.7Vread,programanderase)withhigh-speed,low-poweroperation.Flexible | IntelIntel Corporation(Integrated Electronics Corporation) 英特尔英特尔(集成电子公司) | |||
AdvancedBootBlockFlashMemory(C3) The0.25µm3VoltAdvanced+BootBlock,manufacturedonIntel’slatest0.25µtechnology,representsafeature-richsolutionatoveralllowersystemcost.Smart3flashmemorydevicesincorporatelowvoltagecapability(2.7Vread,programanderase)withhigh-speed,low-poweroperation.Flexible | IntelIntel Corporation(Integrated Electronics Corporation) 英特尔英特尔(集成电子公司) | |||
AdvancedBootBlockFlashMemory(C3) The0.25µm3VoltAdvanced+BootBlock,manufacturedonIntel’slatest0.25µtechnology,representsafeature-richsolutionatoveralllowersystemcost.Smart3flashmemorydevicesincorporatelowvoltagecapability(2.7Vread,programanderase)withhigh-speed,low-poweroperation.Flexible | IntelIntel Corporation(Integrated Electronics Corporation) 英特尔英特尔(集成电子公司) | |||
AdvancedBootBlockFlashMemory(C3) The0.25µm3VoltAdvanced+BootBlock,manufacturedonIntel’slatest0.25µtechnology,representsafeature-richsolutionatoveralllowersystemcost.Smart3flashmemorydevicesincorporatelowvoltagecapability(2.7Vread,programanderase)withhigh-speed,low-poweroperation.Flexible | IntelIntel Corporation(Integrated Electronics Corporation) 英特尔英特尔(集成电子公司) | |||
AdvancedBootBlockFlashMemory(C3) The0.25µm3VoltAdvanced+BootBlock,manufacturedonIntel’slatest0.25µtechnology,representsafeature-richsolutionatoveralllowersystemcost.Smart3flashmemorydevicesincorporatelowvoltagecapability(2.7Vread,programanderase)withhigh-speed,low-poweroperation.Flexible | IntelIntel Corporation(Integrated Electronics Corporation) 英特尔英特尔(集成电子公司) | |||
AdvancedBootBlockFlashMemory(C3) The0.25µm3VoltAdvanced+BootBlock,manufacturedonIntel’slatest0.25µtechnology,representsafeature-richsolutionatoveralllowersystemcost.Smart3flashmemorydevicesincorporatelowvoltagecapability(2.7Vread,programanderase)withhigh-speed,low-poweroperation.Flexible | IntelIntel Corporation(Integrated Electronics Corporation) 英特尔英特尔(集成电子公司) | |||
AdvancedBootBlockFlashMemory(C3) The0.25µm3VoltAdvanced+BootBlock,manufacturedonIntel’slatest0.25µtechnology,representsafeature-richsolutionatoveralllowersystemcost.Smart3flashmemorydevicesincorporatelowvoltagecapability(2.7Vread,programanderase)withhigh-speed,low-poweroperation.Flexible | IntelIntel Corporation(Integrated Electronics Corporation) 英特尔英特尔(集成电子公司) | |||
Numonyx??EmbeddedFlashMemory(J3v.D) Introduction ThisdocumentcontainsinformationpertainingtotheNumonyx™EmbeddedFlashMemory(J3vD)devicefeatures,operation,andspecifications. ProductFeatures ■Architecture —Symmetrical128-Kbyteblocks —256Mbit(256blocks) —128Mbit(128blocks) —64Mbit | NUMONYXNUMONYX 恒忆 | |||
WORD-WIDEFlashFileMEMORYFAMILY INTRODUCTION Thisdatasheetcontains16-and32-MbitWordWideFlashFileTMmemory(28F160S3and28F320S3)specifications.Section1providesaflashmemoryoverview.Sections2,3,4,and5describethememoryorganizationandfunctionality.Section6coverselectricalspecificationsforextended | IntelIntel Corporation(Integrated Electronics Corporation) 英特尔英特尔(集成电子公司) | |||
WORD-WIDEFlashFileMEMORYFAMILY INTRODUCTION Thisdatasheetcontains16-and32-MbitWordWideFlashFileTMmemory(28F160S3and28F320S3)specifications.Section1providesaflashmemoryoverview.Sections2,3,4,and5describethememoryorganizationandfunctionality.Section6coverselectricalspecificationsforextended | IntelIntel Corporation(Integrated Electronics Corporation) 英特尔英特尔(集成电子公司) | |||
封装/外壳:48-TFSOP(0.724",18.40mm 宽) 包装:管件 描述:IC FLSH 32MBIT PARALLEL 48TSOP I 集成电路(IC) 存储器 | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | |||
IntelStrataFlashMemory(J3) 文件:905.78 Kbytes Page:72 Pages | IntelIntel Corporation(Integrated Electronics Corporation) 英特尔英特尔(集成电子公司) | |||
IntelStrataFlashMemory(J3) 文件:905.78 Kbytes Page:72 Pages | IntelIntel Corporation(Integrated Electronics Corporation) 英特尔英特尔(集成电子公司) | |||
IntelStrataFlashMemory(J3) 文件:905.78 Kbytes Page:72 Pages | IntelIntel Corporation(Integrated Electronics Corporation) 英特尔英特尔(集成电子公司) | |||
IntelStrataFlashMemory(J3) 文件:905.78 Kbytes Page:72 Pages | IntelIntel Corporation(Integrated Electronics Corporation) 英特尔英特尔(集成电子公司) | |||
IntelStrataFlashMemory(J3) 文件:905.78 Kbytes Page:72 Pages | IntelIntel Corporation(Integrated Electronics Corporation) 英特尔英特尔(集成电子公司) | |||
IntelStrataFlashMemory(J3) 文件:905.78 Kbytes Page:72 Pages | IntelIntel Corporation(Integrated Electronics Corporation) 英特尔英特尔(集成电子公司) | |||
IntelStrataFlashMemory(J3) 文件:905.78 Kbytes Page:72 Pages | IntelIntel Corporation(Integrated Electronics Corporation) 英特尔英特尔(集成电子公司) | |||
IntelStrataFlash짰Memory 文件:990.7 Kbytes Page:72 Pages | IntelIntel Corporation(Integrated Electronics Corporation) 英特尔英特尔(集成电子公司) | |||
IntelStrataFlashMemory(J3) 文件:905.78 Kbytes Page:72 Pages | IntelIntel Corporation(Integrated Electronics Corporation) 英特尔英特尔(集成电子公司) | |||
IntelStrataFlashMemory(J3) 文件:905.78 Kbytes Page:72 Pages | IntelIntel Corporation(Integrated Electronics Corporation) 英特尔英特尔(集成电子公司) | |||
IntelStrataFlashMemory(J3) 文件:905.78 Kbytes Page:72 Pages | IntelIntel Corporation(Integrated Electronics Corporation) 英特尔英特尔(集成电子公司) | |||
IntelStrataFlashMemory(J3) 文件:905.78 Kbytes Page:72 Pages | IntelIntel Corporation(Integrated Electronics Corporation) 英特尔英特尔(集成电子公司) | |||
封装/外壳:56-TFSOP(0.724",18.40mm 宽) 包装:卷带(TR) 描述:IC FLASH 32MBIT PARALLEL 56TSOP 集成电路(IC) 存储器 | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | |||
32M(x16)FlashMemory 32Mbit(2Mbit×16)PageModeDualWorkFlashMEMORY Theproduct,whichis4-PlanePageModeDualWork(SimultaneousReadwhileErase/Program)Flashmemory,isalowpower,highdensity,lowcost,nonvolatileread/writestoragesolutionforawiderangeofapplications.TheproductcanoperateatV | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司(SMA) | |||
32M(x16)FlashMemory 32Mbit(2Mbit×16)PageModeDualWorkFlashMEMORY Theproduct,whichis4-PlanePageModeDualWork(SimultaneousReadwhileErase/Program)Flashmemory,isalowpower,highdensity,lowcost,nonvolatileread/writestoragesolutionforawiderangeofapplications.TheproductcanoperateatV | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司(SMA) | |||
32M(x16)FlashMemory 32Mbit(2Mbit×16)PageModeDualWorkFlashMEMORY Theproduct,whichis4-PlanePageModeDualWork(SimultaneousReadwhileErase/Program)Flashmemory,isalowpower,highdensity,lowcost,nonvolatileread/writestoragesolutionforawiderangeofapplications.TheproductcanoperateatV | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司(SMA) | |||
32M(x16)FlashMemory Theproduct,whichis4-PlanePageModeDualWork(SimultaneousReadwhileErase/Program)Flashmemory,isalowpower,highdensity,lowcost,nonvolatileread/writestoragesolutionforawiderangeofapplications.TheproductcanoperateatVCC=2.7V-3.6VandVPP=1.65V-3.6Vor11.7V-12.3V.Its | SHARPSharp Microelectronics of the Americas (SMA) 夏普微美国夏普微电子公司(SMA) |
TE28F320产品属性
- 类型
描述
- 型号
TE28F320
- 制造商
INTEL
- 制造商全称
Intel Corporation
- 功能描述
3 Volt Advanced Boot Block Flash Memory
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
INTEL/英特尔 |
22+ |
TSOP56 |
58560 |
代理品牌,原装现货,假一罚十 |
|||
INTEL(英特尔) |
23+ |
N/A |
589610 |
新到现货 原厂一手货源 价格秒杀代理! |
|||
INTEL |
23+ |
TSOP |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
INTEL |
2020+ |
TSOP48 |
2000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
INTEL |
05+ |
18 |
全新原装!优势库存热卖中! |
||||
INTEL/英特尔 |
2020+ |
TSSOP |
90000 |
原装现货/假一罚十/可开增票 |
|||
int |
dc03 |
原厂封装 |
56 |
INSTOCK:96/tray/tssop |
|||
INTEL |
2023+ |
3000 |
进口原装现货 |
||||
INTEL |
2022+ |
TSOP56 |
12096 |
原厂授权代理 价格绝对优势 |
|||
INTEL |
22+ |
TSOP |
6850 |
十七年VIP会员,诚信经营,一手货源,原装正品可零售! |
TE28F320规格书下载地址
TE28F320参数引脚图相关
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- TE200A
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概述该TEA1039是一个双极集成电路设计的开关模式电源控制目的。再加上外部误差放大器和电压调节器(例如一个稳压二极管)形成一个完整的控制系统。该电路能够直接驱动小功率晶体管开关电源系统的开关电源。特点:·适于频率和占空比调节。·适合用于回扫转换器和正向转换器。·宽的频率范围。·可调整的输入灵敏度。·可调最小频率和最大占空比限制。·可调过流保护限制。·电源电压超出范围的保护。·慢启动设施。功能描述
2013-3-6
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