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TE28F320

3 Volt Advanced Boot Block Flash Memory

This datasheet contains the specifications for the 3 Volt Advanced Boot Block flash memory family, which is optimized for low power, portable systems.

INTEL

英特尔

SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY

INTRODUCTION This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and e

INTEL

英特尔

SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY

INTRODUCTION This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and e

INTEL

英特尔

SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY

INTRODUCTION This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and e

INTEL

英特尔

3 Volt Advanced Boot Block Flash Memory

This datasheet contains the specifications for the 3 Volt Advanced Boot Block flash memory family, which is optimized for low power, portable systems.

INTEL

英特尔

SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY

INTRODUCTION This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and e

INTEL

英特尔

3 Volt Advanced Boot Block Flash Memory

This datasheet contains the specifications for the 3 Volt Advanced Boot Block flash memory family, which is optimized for low power, portable systems.

INTEL

英特尔

SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY

INTRODUCTION This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and e

INTEL

英特尔

3 Volt Advanced Boot Block Flash Memory

This datasheet contains the specifications for the 3 Volt Advanced Boot Block flash memory family, which is optimized for low power, portable systems.

INTEL

英特尔

3 Volt Advanced Boot Block Flash Memory

This datasheet contains the specifications for the 3 Volt Advanced Boot Block flash memory family, which is optimized for low power, portable systems.

INTEL

英特尔

SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY

INTRODUCTION This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and e

INTEL

英特尔

SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY

INTRODUCTION This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and e

INTEL

英特尔

3 Volt Advanced Boot Block Flash Memory

This datasheet contains the specifications for the 3 Volt Advanced Boot Block flash memory family, which is optimized for low power, portable systems.

INTEL

英特尔

SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY

INTRODUCTION This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and e

INTEL

英特尔

3 Volt Advanced Boot Block Flash Memory

This datasheet contains the specifications for the 3 Volt Advanced Boot Block flash memory family, which is optimized for low power, portable systems.

INTEL

英特尔

SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY

INTRODUCTION This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and e

INTEL

英特尔

3 Volt Advanced Boot Block Flash Memory

This datasheet contains the specifications for the 3 Volt Advanced Boot Block flash memory family, which is optimized for low power, portable systems.

INTEL

英特尔

3 Volt Advanced Boot Block Flash Memory

This datasheet contains the specifications for the 3 Volt Advanced Boot Block flash memory family, which is optimized for low power, portable systems.

INTEL

英特尔

3 Volt Intel Advanced Boot Block Flash Memory

Device Description This section provides an overview of the Intel® Advanced+ Boot Block Flash Memory (C3) device features, packaging, signal naming, and device architecture. Product Overview The C3 device provides high-performance asynchronous reads in package-compatible densities with a 16 bit

INTEL

英特尔

3 VOLT ADVANCED BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

INTEL

英特尔

3 VOLT ADVANCED BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

INTEL

英特尔

Advanced Boot Block Flash Memory (C3)

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

INTEL

英特尔

Advanced Boot Block Flash Memory (C3)

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

INTEL

英特尔

Advanced Boot Block Flash Memory (C3)

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

INTEL

英特尔

Advanced Boot Block Flash Memory (C3)

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

INTEL

英特尔

Advanced Boot Block Flash Memory (C3)

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

INTEL

英特尔

Advanced Boot Block Flash Memory (C3)

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

INTEL

英特尔

3 VOLT ADVANCED BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

INTEL

英特尔

3 VOLT ADVANCED BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

INTEL

英特尔

Advanced Boot Block Flash Memory (C3)

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

INTEL

英特尔

Advanced Boot Block Flash Memory (C3)

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

INTEL

英特尔

Advanced Boot Block Flash Memory (C3)

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

INTEL

英特尔

Advanced Boot Block Flash Memory (C3)

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

INTEL

英特尔

Advanced Boot Block Flash Memory (C3)

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

INTEL

英特尔

Advanced Boot Block Flash Memory (C3)

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

INTEL

英特尔

Numonyx??Embedded Flash Memory (J3 v. D)

Introduction This document contains information pertaining to the Numonyx™ Embedded Flash Memory (J3 v D) device features, operation, and specifications. Product Features ■ Architecture — Symmetrical 128-Kbyte blocks — 256 Mbit (256 blocks) — 128 Mbit (128 blocks) — 64 Mbit

NUMONYX

WORD-WIDE FlashFile MEMORY FAMILY

INTRODUCTION This datasheet contains 16- and 32-Mbit WordWide FlashFileTM memory (28F160S3 and 28F320S3) specifications. Section 1 provides a flash memory overview. Sections 2, 3, 4, and 5 describe the memory organization and functionality. Section 6 covers electrical specifications for extended

INTEL

英特尔

WORD-WIDE FlashFile MEMORY FAMILY

INTRODUCTION This datasheet contains 16- and 32-Mbit WordWide FlashFileTM memory (28F160S3 and 28F320S3) specifications. Section 1 provides a flash memory overview. Sections 2, 3, 4, and 5 describe the memory organization and functionality. Section 6 covers electrical specifications for extended

INTEL

英特尔

封装/外壳:48-TFSOP(0.724",18.40mm 宽) 包装:管件 描述:IC FLSH 32MBIT PARALLEL 48TSOP I 集成电路(IC) 存储器

ETC

知名厂家

Intel StrataFlash Memory (J3)

文件:905.78 Kbytes Page:72 Pages

INTEL

英特尔

Intel StrataFlash Memory (J3)

文件:905.78 Kbytes Page:72 Pages

INTEL

英特尔

Intel StrataFlash Memory (J3)

文件:905.78 Kbytes Page:72 Pages

INTEL

英特尔

Intel StrataFlash Memory (J3)

文件:905.78 Kbytes Page:72 Pages

INTEL

英特尔

Intel StrataFlash Memory (J3)

文件:905.78 Kbytes Page:72 Pages

INTEL

英特尔

Intel StrataFlash Memory (J3)

文件:905.78 Kbytes Page:72 Pages

INTEL

英特尔

Intel StrataFlash Memory (J3)

文件:905.78 Kbytes Page:72 Pages

INTEL

英特尔

Intel StrataFlash짰 Memory

文件:990.7 Kbytes Page:72 Pages

INTEL

英特尔

Intel StrataFlash Memory (J3)

文件:905.78 Kbytes Page:72 Pages

INTEL

英特尔

Intel StrataFlash Memory (J3)

文件:905.78 Kbytes Page:72 Pages

INTEL

英特尔

Intel StrataFlash Memory (J3)

文件:905.78 Kbytes Page:72 Pages

INTEL

英特尔

Intel StrataFlash Memory (J3)

文件:905.78 Kbytes Page:72 Pages

INTEL

英特尔

封装/外壳:56-TFSOP(0.724",18.40mm 宽) 包装:卷带(TR) 描述:IC FLASH 32MBIT PARALLEL 56TSOP 集成电路(IC) 存储器

ETC

知名厂家

Parallel NOR Flash

MICRON

美光

Parallel NOR Flash

MICRON

美光

Parallel NOR Flash

MICRON

美光

32M (x16) Flash Memory

32Mbit (2Mbit×16) Page Mode Dual Work Flash MEMORY The product, which is 4-Plane Page Mode Dual Work (Simultaneous Read while Erase/Program) Flash memory, is a low power, high density, low cost, nonvolatile read/write storage solution for a wide range of applications. The product can operate at V

SHARPSharp Corporation

夏普

32M (x16) Flash Memory

32Mbit (2Mbit×16) Page Mode Dual Work Flash MEMORY The product, which is 4-Plane Page Mode Dual Work (Simultaneous Read while Erase/Program) Flash memory, is a low power, high density, low cost, nonvolatile read/write storage solution for a wide range of applications. The product can operate at V

SHARPSharp Corporation

夏普

32M (x16) Flash Memory

32Mbit (2Mbit×16) Page Mode Dual Work Flash MEMORY The product, which is 4-Plane Page Mode Dual Work (Simultaneous Read while Erase/Program) Flash memory, is a low power, high density, low cost, nonvolatile read/write storage solution for a wide range of applications. The product can operate at V

SHARPSharp Corporation

夏普

32M (x16) Flash Memory

The product, which is 4-Plane Page Mode Dual Work (Simultaneous Read while Erase/Program) Flash memory, is a low power, high density, low cost, nonvolatile read/write storage solution for a wide range of applications. The product can operate at VCC=2.7V-3.6V and VPP=1.65V-3.6V or 11.7V-12.3V. Its

SHARPSharp Corporation

夏普

TE28F320产品属性

  • 类型

    描述

  • 型号

    TE28F320

  • 制造商

    INTEL

  • 制造商全称

    Intel Corporation

  • 功能描述

    3 Volt Advanced Boot Block Flash Memory

更新时间:2026-5-23 15:34:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INTEL
14+
TSOP
9860
大量原装进口现货,一手货源,一站式服务,可开17%增
MICRON/美光
25+
N/A
12496
MICRON/美光原装正品TE28F320J3D75A即刻询购立享优惠#长期有货
INTEL(英特尔)
24+
标准封装
15298
原厂渠道供应,大量现货,原型号开票。
INTEL
2023+
TSOP
53500
正品,原装现货
INTEL/英特尔
1047+
明嘉莱只做原装正品现货
2510000
TSOP56
INTEL/英特尔
25+
TSOP
20000
原装
INTEL/英特尔
2025+
TSOP
5000
原装进口,免费送样品!
INTEL
2025+
N/A
70000
柒号只做原装 现货价秒杀全网
INTEL
24+
TSSOP
20000
原厂原装,正品现货,假一罚十
INT
24+
TSOP-48
7150
绝对原装现货,价格低,欢迎询购!

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