型号 功能描述 生产厂家 企业 LOGO 操作
TE28F320

3 Volt Advanced Boot Block Flash Memory

This datasheet contains the specifications for the 3 Volt Advanced Boot Block flash memory family, which is optimized for low power, portable systems.

Intel

英特尔

SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY

INTRODUCTION This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and e

Intel

英特尔

SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY

INTRODUCTION This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and e

Intel

英特尔

SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY

INTRODUCTION This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and e

Intel

英特尔

3 Volt Advanced Boot Block Flash Memory

This datasheet contains the specifications for the 3 Volt Advanced Boot Block flash memory family, which is optimized for low power, portable systems.

Intel

英特尔

SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY

INTRODUCTION This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and e

Intel

英特尔

3 Volt Advanced Boot Block Flash Memory

This datasheet contains the specifications for the 3 Volt Advanced Boot Block flash memory family, which is optimized for low power, portable systems.

Intel

英特尔

SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY

INTRODUCTION This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and e

Intel

英特尔

3 Volt Advanced Boot Block Flash Memory

This datasheet contains the specifications for the 3 Volt Advanced Boot Block flash memory family, which is optimized for low power, portable systems.

Intel

英特尔

3 Volt Advanced Boot Block Flash Memory

This datasheet contains the specifications for the 3 Volt Advanced Boot Block flash memory family, which is optimized for low power, portable systems.

Intel

英特尔

SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY

INTRODUCTION This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and e

Intel

英特尔

SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY

INTRODUCTION This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and e

Intel

英特尔

3 Volt Advanced Boot Block Flash Memory

This datasheet contains the specifications for the 3 Volt Advanced Boot Block flash memory family, which is optimized for low power, portable systems.

Intel

英特尔

SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY

INTRODUCTION This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and e

Intel

英特尔

3 Volt Advanced Boot Block Flash Memory

This datasheet contains the specifications for the 3 Volt Advanced Boot Block flash memory family, which is optimized for low power, portable systems.

Intel

英特尔

SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY

INTRODUCTION This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and e

Intel

英特尔

3 Volt Advanced Boot Block Flash Memory

This datasheet contains the specifications for the 3 Volt Advanced Boot Block flash memory family, which is optimized for low power, portable systems.

Intel

英特尔

3 Volt Advanced Boot Block Flash Memory

This datasheet contains the specifications for the 3 Volt Advanced Boot Block flash memory family, which is optimized for low power, portable systems.

Intel

英特尔

3 Volt Intel Advanced Boot Block Flash Memory

Device Description This section provides an overview of the Intel® Advanced+ Boot Block Flash Memory (C3) device features, packaging, signal naming, and device architecture. Product Overview The C3 device provides high-performance asynchronous reads in package-compatible densities with a 16 bit

Intel

英特尔

3 VOLT ADVANCED BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

Intel

英特尔

3 VOLT ADVANCED BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

Intel

英特尔

Advanced Boot Block Flash Memory (C3)

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

Intel

英特尔

Advanced Boot Block Flash Memory (C3)

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

Intel

英特尔

Advanced Boot Block Flash Memory (C3)

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

Intel

英特尔

Advanced Boot Block Flash Memory (C3)

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

Intel

英特尔

Advanced Boot Block Flash Memory (C3)

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

Intel

英特尔

Advanced Boot Block Flash Memory (C3)

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

Intel

英特尔

3 VOLT ADVANCED BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

Intel

英特尔

3 VOLT ADVANCED BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

Intel

英特尔

Advanced Boot Block Flash Memory (C3)

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

Intel

英特尔

Advanced Boot Block Flash Memory (C3)

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

Intel

英特尔

Advanced Boot Block Flash Memory (C3)

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

Intel

英特尔

Advanced Boot Block Flash Memory (C3)

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

Intel

英特尔

Advanced Boot Block Flash Memory (C3)

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

Intel

英特尔

Advanced Boot Block Flash Memory (C3)

The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible

Intel

英特尔

Numonyx??Embedded Flash Memory (J3 v. D)

Introduction This document contains information pertaining to the Numonyx™ Embedded Flash Memory (J3 v D) device features, operation, and specifications. Product Features ■ Architecture — Symmetrical 128-Kbyte blocks — 256 Mbit (256 blocks) — 128 Mbit (128 blocks) — 64 Mbit

NUMONYX

numonyx

WORD-WIDE FlashFile MEMORY FAMILY

INTRODUCTION This datasheet contains 16- and 32-Mbit WordWide FlashFileTM memory (28F160S3 and 28F320S3) specifications. Section 1 provides a flash memory overview. Sections 2, 3, 4, and 5 describe the memory organization and functionality. Section 6 covers electrical specifications for extended

Intel

英特尔

WORD-WIDE FlashFile MEMORY FAMILY

INTRODUCTION This datasheet contains 16- and 32-Mbit WordWide FlashFileTM memory (28F160S3 and 28F320S3) specifications. Section 1 provides a flash memory overview. Sections 2, 3, 4, and 5 describe the memory organization and functionality. Section 6 covers electrical specifications for extended

Intel

英特尔

封装/外壳:48-TFSOP(0.724",18.40mm 宽) 包装:管件 描述:IC FLSH 32MBIT PARALLEL 48TSOP I 集成电路(IC) 存储器

ETC

知名厂家

Intel StrataFlash Memory (J3)

文件:905.78 Kbytes Page:72 Pages

Intel

英特尔

Intel StrataFlash Memory (J3)

文件:905.78 Kbytes Page:72 Pages

Intel

英特尔

Intel StrataFlash Memory (J3)

文件:905.78 Kbytes Page:72 Pages

Intel

英特尔

Intel StrataFlash Memory (J3)

文件:905.78 Kbytes Page:72 Pages

Intel

英特尔

Intel StrataFlash Memory (J3)

文件:905.78 Kbytes Page:72 Pages

Intel

英特尔

Intel StrataFlash Memory (J3)

文件:905.78 Kbytes Page:72 Pages

Intel

英特尔

Intel StrataFlash Memory (J3)

文件:905.78 Kbytes Page:72 Pages

Intel

英特尔

Intel StrataFlash짰 Memory

文件:990.7 Kbytes Page:72 Pages

Intel

英特尔

Intel StrataFlash Memory (J3)

文件:905.78 Kbytes Page:72 Pages

Intel

英特尔

Intel StrataFlash Memory (J3)

文件:905.78 Kbytes Page:72 Pages

Intel

英特尔

Intel StrataFlash Memory (J3)

文件:905.78 Kbytes Page:72 Pages

Intel

英特尔

Intel StrataFlash Memory (J3)

文件:905.78 Kbytes Page:72 Pages

Intel

英特尔

封装/外壳:56-TFSOP(0.724",18.40mm 宽) 包装:卷带(TR) 描述:IC FLASH 32MBIT PARALLEL 56TSOP 集成电路(IC) 存储器

ETC

知名厂家

Parallel NOR Flash

Micron

美光

Parallel NOR Flash

Micron

美光

Parallel NOR Flash

Micron

美光

32M (x16) Flash Memory

32Mbit (2Mbit×16) Page Mode Dual Work Flash MEMORY The product, which is 4-Plane Page Mode Dual Work (Simultaneous Read while Erase/Program) Flash memory, is a low power, high density, low cost, nonvolatile read/write storage solution for a wide range of applications. The product can operate at V

SHARPSharp Corporation

夏普

32M (x16) Flash Memory

32Mbit (2Mbit×16) Page Mode Dual Work Flash MEMORY The product, which is 4-Plane Page Mode Dual Work (Simultaneous Read while Erase/Program) Flash memory, is a low power, high density, low cost, nonvolatile read/write storage solution for a wide range of applications. The product can operate at V

SHARPSharp Corporation

夏普

32M (x16) Flash Memory

32Mbit (2Mbit×16) Page Mode Dual Work Flash MEMORY The product, which is 4-Plane Page Mode Dual Work (Simultaneous Read while Erase/Program) Flash memory, is a low power, high density, low cost, nonvolatile read/write storage solution for a wide range of applications. The product can operate at V

SHARPSharp Corporation

夏普

32M (x16) Flash Memory

The product, which is 4-Plane Page Mode Dual Work (Simultaneous Read while Erase/Program) Flash memory, is a low power, high density, low cost, nonvolatile read/write storage solution for a wide range of applications. The product can operate at VCC=2.7V-3.6V and VPP=1.65V-3.6V or 11.7V-12.3V. Its

SHARPSharp Corporation

夏普

TE28F320产品属性

  • 类型

    描述

  • 型号

    TE28F320

  • 制造商

    INTEL

  • 制造商全称

    Intel Corporation

  • 功能描述

    3 Volt Advanced Boot Block Flash Memory

更新时间:2025-9-18 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INTEL(英特尔)
24+
NA/
8735
原厂直销,现货供应,账期支持!
INTEL(英特尔)
24+
标准封装
15298
原厂渠道供应,大量现货,原型号开票。
INTEL
2016+
TSOP
4000
只做原装,假一罚十,公司可开17%增值税发票!
MICRON/美光
25+
N/A
12496
MICRON/美光原装正品TE28F320J3D75A即刻询购立享优惠#长期有货
INTEL
24+
TSSOP
20000
原厂原装,正品现货,假一罚十
INTEL
2430+
TSOP
8540
只做原装正品假一赔十为客户做到零风险!!
INTEL/英特尔
25+
TSOP
13800
原装,请咨询
INTEL
25+
TSOP48
2000
百分百原装正品 真实公司现货库存 本公司只做原装 可
INTEL
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
INTEL
05+
18
全新原装!优势库存热卖中!

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