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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
TE28F008 | SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY INTRODUCTION This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and e | INTEL 英特尔 |   | |
TE28F008 | SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY | INTEL 英特尔 | | |
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY INTRODUCTION This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and e | INTEL 英特尔 | | ||
SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE INTRODUCTION This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and e | INTEL 英特尔 | | ||
SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE INTRODUCTION This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and e | INTEL 英特尔 | | ||
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY INTRODUCTION This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and e | INTEL 英特尔 | | ||
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY INTRODUCTION This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and e | INTEL 英特尔 | | ||
3 Volt Advanced Boot Block Flash Memory This datasheet contains the specifications for the 3 Volt Advanced Boot Block flash memory family, which is optimized for low power, portable systems. | INTEL 英特尔 | | ||
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY INTRODUCTION This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and e | INTEL 英特尔 | | ||
3 Volt Advanced Boot Block Flash Memory This datasheet contains the specifications for the 3 Volt Advanced Boot Block flash memory family, which is optimized for low power, portable systems. | INTEL 英特尔 | | ||
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY INTRODUCTION This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and e | INTEL 英特尔 | | ||
SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE INTRODUCTION This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and e | INTEL 英特尔 | | ||
SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE INTRODUCTION This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and e | INTEL 英特尔 | | ||
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY INTRODUCTION This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and e | INTEL 英特尔 | | ||
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY INTRODUCTION This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and e | INTEL 英特尔 | | ||
3 Volt Advanced Boot Block Flash Memory This datasheet contains the specifications for the 3 Volt Advanced Boot Block flash memory family, which is optimized for low power, portable systems. | INTEL 英特尔 | | ||
3 Volt Advanced Boot Block Flash Memory This datasheet contains the specifications for the 3 Volt Advanced Boot Block flash memory family, which is optimized for low power, portable systems. | INTEL 英特尔 | | ||
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY INTRODUCTION This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and e | INTEL 英特尔 | | ||
3 VOLT ADVANCED BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible | INTEL 英特尔 | | ||
3 VOLT ADVANCED BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible | INTEL 英特尔 | | ||
3 VOLT ADVANCED BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible | INTEL 英特尔 | | ||
3 VOLT ADVANCED BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY The 0.25 µm 3 Volt Advanced+ Boot Block, manufactured on Intel’s latest 0.25 µ technology, represents a feature-rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability (2.7 V read, program and erase) with high-speed, low-power operation. Flexible | INTEL 英特尔 | | ||
BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT INTRODUCTION This datasheet contains 4-, 8-, and 16-Mbit 3 Volt FlashFile memory specifications. Section 1.0 provides a flash memory overview. Sections 2.0, 3.0, 4.0, and 5.0 describe the memory organization and functionality. Section 6.0 covers electrical specifications for commercial and extend | INTEL 英特尔 | | ||
BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT SMART 5 FlashFile™ MEMORY FAMILY 4, 8, AND 16 MBIT Intel’s byte-wide Smart 5 FlashFile™ memory family renders a variety of density offerings in the same package. The 4-, 8-, and 16-Mbit byte-wide FlashFile memories provide high-density, low-cost, nonvolatile, read/write storage solutions for a wi | INTEL 英特尔 | | ||
8-MBIT (1-MBIT x 8) FlashFileTM MEMORY Intel’s 28F008SA 8-Mbit FlashFileTM Memory is the highest density nonvolatile read/write solution for solid-state storage. The 28F008SA’s extended cycling, symmetrically blocked architecture, fast access time, write automation and low power consumption provide a more reliable, lower power, lighter | INTEL 英特尔 | | ||
BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT INTRODUCTION This datasheet contains 4-, 8-, and 16-Mbit SmartVoltage FlashFile memory specifications. Section 1.0 provides a flash memory overview. Sections 2.0, through 5.0 describe the memory organization and functionality. Section 6.0 covers electrical specifications for commercial and extend | INTEL 英特尔 | | ||
SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE | INTEL 英特尔 | | ||
8-MBIT (1-MBIT x 8) FlashFileTM MEMORY Intel’s 28F008SA 8-Mbit FlashFileTM Memory is the highest density nonvolatile read/write solution for solid-state storage. The 28F008SA’s extended cycling, symmetrically blocked architecture, fast access time, write automation and low power consumption provide a more reliable, lower power, lighter | INTEL 英特尔 | | ||
8 MBIT (1 MBIT x 8) FLASH MEMORY PRODUCT OVERVIEW The VE28F008 is a high-performance 8 Mbit (8,388,608 bit) memory organized as 1 Mbyte (1,048,576 bytes) of 8 bits each. Sixteen 64 Kbyte (65,536 byte) blocks are included on the VE28F008. A memory map is shown in Figure 4 of this specification. A block erase operation erases one | INTEL 英特尔 | | ||
8-MBIT (1 MBIT x 8) FLASHFILETM MEMORY PRODUCT OVERVIEW The 28F008SA-L is a high-performance 8-Mbit (8,388,608-bit) memory organized as 1 Mbyte (1,048,576 bytes) of 8 bits each. Sixteen 64-Kbyte (65,536-byte) blocks are included on the 28F008SA-L. A memory map is shown in Figure 6 of this specification. A block erase operation erases | INTEL 英特尔 | | ||
8 MBIT (1 MBIT x 8) FLASH MEMORY PRODUCT OVERVIEW The VE28F008 is a high-performance 8 Mbit (8,388,608 bit) memory organized as 1 Mbyte (1,048,576 bytes) of 8 bits each. Sixteen 64 Kbyte (65,536 byte) blocks are included on the VE28F008. A memory map is shown in Figure 4 of this specification. A block erase operation erases one | INTEL 英特尔 | | ||
M-bit (1 MB x 8) Smart 5 Flash Memories FEATURES • Smart 5 technology – 5 V VCC – 5 V or 12 V VPP • High performance read access time LH28F008SC-V85/SCH-V85 – 85 ns (5.0±0.25 V)/90 ns (5.0±0.5 V) LH28F008SC-V12/SCH-V12 – 120 ns (5.0±0.5 V) • Enhanced automated suspend options – Byte write suspend to read – Block erase suspend | SHARPSharp Corporation 夏普 | |
TE28F008产品属性
- 类型
描述
- 型号
TE28F008
- 制造商
INTEL
- 制造商全称
Intel Corporation
- 功能描述
SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
2023+ |
3000 |
进口原装现货 |
|||||
INTEL/英特尔 |
24+ |
TSOP |
60000 |
全新原装现货 |
|||
INTEL |
99+ |
TSOP-40 |
528 |
原装现货海量库存欢迎咨询 |
|||
INTEL |
19+ |
TSSOP40 |
23537 |
||||
INTEL/英特尔 |
24+ |
TSOP |
9600 |
原装现货,优势供应,支持实单! |
|||
INTEL/英特尔 |
2402+ |
TSOP-40 |
8324 |
原装正品!实单价优! |
|||
INTERSILE |
319 |
917 |
原装正品 |
||||
INTEL |
22+ |
TSOP |
12245 |
现货,原厂原装假一罚十! |
|||
INTEL |
2016+ |
TSOP40 |
9000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
INTEL |
20+ |
TSOP |
2860 |
原厂原装正品价格优惠公司现货欢迎查询 |
TE28F008规格书下载地址
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2013-3-6
DdatasheetPDF页码索引
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