Advanced IGBT/MOSFET Driver

Description This device is an advanced gate driver for IGBTs and power MOSFETs. Control and protection functions are included and allow the design of high reliability systems. The innovative active Miller clamp function eliminates the need for negative gate drive in most applications and all

先进的IGBT/MOSFET驱动器

This device is an advanced gate driver for IGBTs and power MOSFETs. Control and protection functions are included and allow the design of high reliability systems.\n\n The innovative active Miller clamp function eliminates the need for negative gate drive in most applications and allows the use of a • 1.7 A sink / 1.3 A source (typ) current capability \n• Active Miller clamp feature \n• Desaturation detection \n• Adjustable turn-on delay \n• UVLO protection \n• 2k V ESD protection;

光耦合器-Darlington Transistor

Advanced IGBT/MOSFET Driver

Description This device is an advanced gate driver for IGBTs and power MOSFETs. Control and protection functions are included and allow the design of high reliability systems. The innovative active Miller clamp function eliminates the need for negative gate drive in most applications and all

Advanced IGBT/MOSFET Driver

Description This device is an advanced gate driver for IGBTs and power MOSFETs. Control and protection functions are included and allow the design of high reliability systems. The innovative active Miller clamp function eliminates the need for negative gate drive in most applications and all

Advanced IGBT/MOSFET Driver

Description This device is an advanced gate driver for IGBTs and power MOSFETs. Control and protection functions are included and allow the design of high reliability systems. The innovative active Miller clamp function eliminates the need for negative gate drive in most applications and all

Advanced IGBT/MOSFET driver

文件：241.09 Kbytes Page：18 Pages

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC GATE DRVR HIGH-SIDE 8SO 集成电路（IC） 栅极驱动器

封装/外壳：8-DIP（0.300"，7.62mm） 包装：管件 描述：IC GATE DRVR HIGH-SIDE 8DIP 集成电路（IC） 栅极驱动器

Dual Hot Carrier Mixer Diodes

Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features •Very Low Capacitance −Less Than 1.0 pF @ Zero V •Low Forward Voltage −0.5 V (Typ) @ IF= 10 mA •P

Silicon Complementary Transistors Digital w/2 Built-In Bias 47k Resistors (Surface Mount)

Description: The NTE352 is a silicon NPN transistor in a W65 type package designed primarily for use in 12.5V VHF large–signal power amplifier applications required in commercial and industrial FM equipment to 175MHz. Features: ● Specified 12.5V, 175MHz Characteristics: Output Power = 75W

Square Type

文件：31.46 Kbytes Page：1 Pages

Square Type

文件：32 Kbytes Page：1 Pages

LinCMOSE DUAL DIFFERENTIAL COMPARATOR

文件：140.77 Kbytes Page：9 Pages