2.2A 52KHz 32V PWM Buck DC/DC Converter

The TD3111 is a 52 KHz fixed frequency monolithic step down switch mode regulator with a built in internal Power MOSFET. It achieves 2.2A continuous output current over a wide input supply range with excellent load and line regulation.The device includes a voltage reference, oscillation circuit, err * 2.2A Constant Output Current\n* 80mΩ RDSON Internal Power PMOSFET Switch\n* Up to 95% Efficiency\n* Fixed 52KHz Frequency\n* Wide 3.6V to 32V Input Voltage Range\n* Output Adjustable from0.8V to 30V\n* Built in Frequency Compensation\n* Built in Thermal Shutdown Function\n* Built in Current Li;

2.2A 52KHZ 32V PWM Buck DC/DC Converter

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MicroPower??Regulated Charge Pump

General Description The AAT3111 ChargePump™ is a MicroPower switched-capacitor voltage converter that delivers a regulated output. No external inductor is required for operation. Using three small capacitors, the AAT3111 can deliver up to 150mA to the voltage regulated output. The AAT3111 feature

NPN Epitaxial Silicon Transistor

Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R=22KΩ) • Complement to FJV4111R

Vertical Driver LSI for Video Camera CCD Area Image Sensor

Overview The MN3111H is a vertical driver LSI for a two-dimensional interline CCD image sensor. It features a built-in power supply circuit that, in conjunction with such external components as four booster capacitors, six voltage stabilization capacitors, eight Schottky barrier diodes, and two Z

Vertical Driver LSI for Video Camera CCD Area Image Sensor

Overview The MN3111H is a vertical driver LSI for a two-dimensional interline CCD image sensor. It features a built-in power supply circuit that, in conjunction with such external components as four booster capacitors, six voltage stabilization capacitors, eight Schottky barrier diodes, and two Z

FET BIAS CONTROLLER WITH POLARISATION SWITCH AND TONE DETECTION

DEVICE DESCRIPTION The ZNBG series of devices are designed to meet the bias requirements of GaAs and HEMT FETs commonly used in satellite receiver LNBs, PMR cellular telephones etc. with a minimum of external components. FEATURES • Provides bias for GaAs and HEMT FETs • Drives up to three