| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
512Kilobit(64Kx8-Bit)CMOS12.0Volt,BulkEraseFlashMemory GENERALDESCRIPTION TheAm28F512isa512KbitFlashmemoryorganizedas64Kbytesof8bitseach.AMD’sFlashmemoriesofferthemostcost-effectiveandreliableread/writenon-volatilerandomaccessmemory.TheAm28F512ispackagedin32-pinPDIP,PLCC,andTSOPversions.Itisdesignedtobe | AMDAdvanced Micro Devices 超威半导体美国超威半导体公司 |  |   | |
512Kilobit(64Kx8-Bit)CMOS12.0Volt,BulkEraseFlashMemorywithEmbeddedAlgorithms GENERALDESCRIPTION TheAm28F512Aisa512KbitFlashmemoryorganizedas64Kbytesof8bitseach.AMD’sFlashmemoriesofferthemostcost-effectiveandreliableread/writenon-volatilerandomaccessmemory.TheAm28F512Aispackagedin32-pinPDIP,PLCC,andTSOPversions.Itisdesignedtob | AMDAdvanced Micro Devices 超威半导体美国超威半导体公司 | | | |
512K(64Kx8)CMOSFLASHMEMORY 512K(64Kx8)CMOSFLASHMEMORY | IntelIntel Corporation 英特尔 |  | | |
512K-BitCMOSFlashMemory DESCRIPTION TheCAT28F512isahighspeed64Kx8-bitelectricallyerasableandreprogrammableFlashmemoryideallysuitedforapplicationsrequiringin-systemorafter-salecodeupdates.Electricalerasureofthefullmemorycontentsisachievedtypicallywithin0.5second. ItispinandReadt | Catalyst Catalyst Semiconductor |  | | |
512K(64Kx8)CMOSFLASHMEMORY 文件：1.81909 Mbytes Page：30 Pages | IntelIntel Corporation 英特尔 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
AMD |
24+/25+ |
196 |
原装正品现货库存价优 |
||||
AMD |
22+ |
PLCC32 |
8200 |
原装现货库存.价格优势!! |
|||
AMD |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
TD28F512芯片相关品牌
TD28F512规格书下载地址
TD28F512参数引脚图相关
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TD28F512数据表相关新闻
TD120N16SOFHPSA1
TD120N16SOFHPSA1
2023-12-13TD370N18KOFHPSA1原装特价现货出售
TD370N18KOFHPSA1
2022-7-12TD301D232H
商品目录通讯模块 工作电压3V~3.6V 数据速率115.2Kbps 隔离器的技术构架- 是否带隔离侧电源Yes 类型RS232 通道数1 通道类型Undirectional 输入端口/输出端口1/0 隔离电压2.5KVDC
2020-11-2TD2676
TD2676，当天发货0755-82732291全新原装现货或门市自取.
2020-10-14TD1509
TD1509，全新原装当天发货或门市自取0755-82732291.
2019-10-23TD350-先进的IGBT/ MOSFET驱动器
特点0.75Asource/1.2A汇分钟栅极驱动有源米勒钳位功能双关断带可调水平步骤和延迟去饱和检测故障状态输出负栅极驱动能力输入脉冲变压器或兼容光耦合器独立的接收器和源输出，方便栅极驱动UVLO保护2kV的ESD保护说明TD350是一种先进的IGBT栅极驱动器和功率MOSFET。控制和保护功能包括并允许高可靠性设计系统。米勒钳位功能的创新活动避免了负栅极驱动需要在大
2013-2-24
DdatasheetPDF页码索引
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