位置：首页 > IC中文资料第22页 > TCET1113G
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
TCET1113G | OptocouplerwithPhototransistorOutput Description TheTCET111.(G)consistsofaphototransistoropticallycoupledtoagalliumarsenideinfrared-emittingdiodeina4-leadplasticdualinlinepackage.Theelementsaremountedononeleadframeusingacoplanartechnique,providingafixeddistancebetweeninputandoutputforhighe | VishayVishay Siliconix 威世科技 |  |   |
TCET1113G | Optocoupler,PhototransistorOutput,HighTemperature,110°C,Rated DESCRIPTION TheTCET111.,TCET111.Gconsistsofaphototransistor opticallycoupledtoagalliumarsenideinfrared-emitting diodeina4pinplasticdualinlinepackage. APPLICATIONS Circuitsforsafeprotectiveseparationagainstelectrical shockaccordingtosafetyclassII(reinforcedi | VishayVishay Siliconix 威世科技 | | |
TCET1113G | Optocoupler,PhototransistorOutput,HighTemperature,110°CRated 文件：203.42 Kbytes Page：11 Pages | VishayVishay Siliconix 威世科技 | | |
2GHzto6GHz,46dBm(40W),GaNPowerAmplifier FEATURES ►InternallymatchedandAC-coupled,40W,GaNpoweramplifier ►Integrateddrainbiasinductor ►POUT:46.5dBmtypicalfrom2.0GHzto5.7GHz(PIN=21dBm) ►Smallsignalgain:40.5dBtypicalfrom2.3GHzto5.7GHz ►Powergain:25.5dBtypicalfrom2.0GHzto5.7GHz(PIN=21 | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 |  | | |
2GHzto6GHz,46dBm(40W),GaNPowerAmplifier FEATURES ►InternallymatchedandAC-coupled,40W,GaNpoweramplifier ►Integrateddrainbiasinductor ►POUT:46.5dBmtypicalfrom2.0GHzto5.7GHz(PIN=21dBm) ►Smallsignalgain:40.5dBtypicalfrom2.3GHzto5.7GHz ►Powergain:25.5dBtypicalfrom2.0GHzto5.7GHz(PIN=21 | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | | | |
2GHzto6GHz,46dBm(40W),GaNPowerAmplifier FEATURES ►InternallymatchedandAC-coupled,40W,GaNpoweramplifier ►Integrateddrainbiasinductor ►POUT:46.5dBmtypicalfrom2.0GHzto5.7GHz(PIN=21dBm) ►Smallsignalgain:40.5dBtypicalfrom2.3GHzto5.7GHz ►Powergain:25.5dBtypicalfrom2.0GHzto5.7GHz(PIN=21 | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | | | |
Miniature,10WDIPSingle&DualOutputDC/DCConverters 文件：171.29 Kbytes Page：2 Pages | MPD MPD (Memory Protection Devices) |  | | |
Ultra-Small,Low-Power,16-BitAnalog-to-DigitalConverterwithInternalReference 文件：789.44 Kbytes Page：34 Pages | TITexas Instruments 德州仪器美国德州仪器公司 |  | |
TCET1113G产品属性
- 类型
描述
- 型号
TCET1113G
- 功能描述
晶体管输出光电耦合器 Phototransistor Out Single CTR>100-200%
- RoHS
否
- 制造商
Vishay Semiconductors
- 输入类型
DC
- 最大集电极/发射极电压
70 V
- 最大集电极/发射极饱和电压
0.4 V
- 绝缘电压
5300 Vrms
- 电流传递比
100 % to 200 %
- 最大正向二极管电压
1.65 V
- 最大输入二极管电流
60 mA
- 最大集电极电流
100 mA
- 最大功率耗散
100 mW
- 最大工作温度
+ 110 C
- 最小工作温度
- 55 C
- 封装/箱体
DIP-4
- 封装
Bulk
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
23+ |
N/A |
36000 |
正品授权货源可靠 |
||||
Vishay Semiconductor Opto Divi |
23+ |
4-DIP(0.400,10.16mm) |
25000 |
in stock隔离器IC-原装正品 |
|||
VISHAY/威世 |
23+ |
PDIP-4 |
8215 |
原厂原装 |
|||
VISHAY |
2020+ |
PDIP-4 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
VISHAY |
11+ |
DIP04 |
8000 |
全新原装,绝对正品现货供应 |
|||
VISHAY/威世 |
21+ |
DIPSOP |
15000 |
原厂VIP渠道,亚太地区一级代理商,可提供更多数量! |
|||
VISHAY/威世 |
2122+ |
DIP |
19990 |
全新原装正品现货,优势渠道可含税,假一赔十 |
|||
VISHAY/威世 |
2021+ |
DIP-4 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
VISHAY |
2016+ |
DIP |
6528 |
只做原厂原装现货!终端客户个别型号可以免费送样品! |
|||
VISHAY/威世 |
23+ |
DIP |
90000 |
只做原厂渠道价格优势可提供技术支持 |
TCET1113G芯片相关品牌
TCET1113G规格书下载地址
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DdatasheetPDF页码索引
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