Optocoupler with Phototransistor Output

Description The TCET111.(G) consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic dual inline package. The elements are mounted on one lead frame using a coplanar technique, providing a fixed distance between input and output for highe

Optocoupler with Phototransistor Output

Optocoupler, Phototransistor Output, High Temperature, 110 °C Rated

文件：203.42 Kbytes Page：11 Pages

Optocoupler with Phototransistor Output

Description The TCET111.(G) consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic dual inline package. The elements are mounted on one lead frame using a coplanar technique, providing a fixed distance between input and output for highe

Optocoupler, Phototransistor Output, High Temperature, 110 °C, Rated

Optocoupler, Phototransistor Output, High Temperature, 110 °C Rated

文件：203.42 Kbytes Page：11 Pages

Optocoupler, Phototransistor Output, High Temperature, 110 °C Rated

文件：203.42 Kbytes Page：11 Pages

200 V - 1,000 V Single Phase Bridge

[VOLTAGE MULTIPLIERS INC.] 200 V - 1,000 V Single Phase Bridge 1.4 A - 1.5 A Forward Current 70 ns - 3000 ns Recovery Time

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