CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC

Dual 4-Input NAND Gate The TC74AC20 is an advanced high speed CMOS 4-INPUT NAND GATE fabricated with silicon gate and double-layer metal wiring C2MOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation

74AC CMOS logic IC series

Function：Dual 4-Input NAND Gate\nNumber of Circuits：2\nRoHS Compatible Product(s) (#)：Available

CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC

Dual 4-Input NAND Gate The TC74AC20 is an advanced high speed CMOS 4-INPUT NAND GATE fabricated with silicon gate and double-layer metal wiring C2MOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation

Dual 4-Input NAND Gate

文件：244.28 Kbytes Page：7 Pages

DUAL 4-INPUT NAND GATE

DESCRIPTION The 74AC20 is an advanced high-speed CMOS DUAL 4-INPUT NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS tecnology. ■ HIGH SPEED: tPD = 4ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 2µA(MAX.) at TA=25°C ■ HIGH NOISE IMMUNITY: VN

DUAL 4-INPUT NAND GATE

DESCRIPTION The 74AC20 is an advanced high-speed CMOS DUAL 4-INPUT NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS tecnology. ■ HIGH SPEED: tPD = 4ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 2µA(MAX.) at TA=25°C ■ HIGH NOISE IMMUNITY: VN

DUAL 4-INPUT NAND GATE

DESCRIPTION The 74AC20 is an advanced high-speed CMOS DUAL 4-INPUT NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS tecnology. ■ HIGH SPEED: tPD = 4ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 2µA(MAX.) at TA=25°C ■ HIGH NOISE IMMUNITY: VN

Dual 4-Input NAND Gate

文件：30.05 Kbytes Page：5 Pages

Dual 4-Input NAND Gate

文件：30.05 Kbytes Page：5 Pages