DUAL 4-INPUT NAND GATE

DESCRIPTION The 74AC20 is an advanced high-speed CMOS DUAL 4-INPUT NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS tecnology. ■ HIGH SPEED: tPD = 4ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 2µA(MAX.) at TA=25°C ■ HIGH NOISE IMMUNITY: VN

DUAL 4-INPUT NAND GATE

DESCRIPTION The 74AC20 is an advanced high-speed CMOS DUAL 4-INPUT NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS tecnology. ■ HIGH SPEED: tPD = 4ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 2µA(MAX.) at TA=25°C ■ HIGH NOISE IMMUNITY: VN

Dual 4-Input NAND Gate

General Description The AC20 contains four 4-input NAND gates. Features ■ ICC reduced by 50 ■ Outputs source/sink 24 mA

DUAL 4-INPUT NAND GATE

DESCRIPTION The 74AC20 is an advanced high-speed CMOS DUAL 4-INPUT NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS tecnology. ■ HIGH SPEED: tPD = 4ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 2µA(MAX.) at TA=25°C ■ HIGH NOISE IMMUNITY: VN

Dual 4?묲nput NAND Gate

文件：122.1 Kbytes Page：8 Pages

Dual 4-Input NAND Gate

文件：99.11 Kbytes Page：7 Pages

Dual 4-Input NAND Gate

General Description The AC20 contains four 4-input NAND gates. Features ■ ICC reduced by 50 ■ Outputs source/sink 24 mA

DUAL 4-INPUT NAND GATE

DESCRIPTION The 74AC20 is an advanced high-speed CMOS DUAL 4-INPUT NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS tecnology. ■ HIGH SPEED: tPD = 4ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 2µA(MAX.) at TA=25°C ■ HIGH NOISE IMMUNITY: VN

Dual 4-Input NAND Gate

文件：99.11 Kbytes Page：7 Pages

Dual 4-Input NAND Gate

文件：99.11 Kbytes Page：7 Pages

封装/外壳：14-TSSOP（0.173"，4.40mm 宽） 包装：卷带（TR） 描述：IC GATE NAND 2CH 4-INP 14TSSOP 集成电路（IC） 门和反相器

封装/外壳：14-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC GATE NAND 2CH 4-INP 14SO 集成电路（IC） 门和反相器