位置：首页 > IC中文资料第5651页 > TC55416
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
262,144 WORD x 16 BIT STATIC RAM Description The TC554161FTL/TRL is a 4,194,304 bit CMOS static random access memory organized as 262,144 words by 16 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating current of 10mA/MHz (typ.) and a min | TOSHIBA 东芝 |   | ||
262,144-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC554161FTL is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5 V ± 10 power supply. Advanced circuit technology provides both high spee | TOSHIBA 东芝 | | ||
262,144 WORD x 16 BIT STATIC RAM Description The TC554161FTL/TRL is a 4,194,304 bit CMOS static random access memory organized as 262,144 words by 16 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating current of 10mA/MHz (typ.) and a min | TOSHIBA 东芝 | | ||
262,144-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC554161FTL is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5 V ± 10 power supply. Advanced circuit technology provides both high spee | TOSHIBA 东芝 | | ||
262,144 WORD x 16 BIT STATIC RAM Description The TC554161FTL/TRL is a 4,194,304 bit CMOS static random access memory organized as 262,144 words by 16 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating current of 10mA/MHz (typ.) and a min | TOSHIBA 东芝 | | ||
262,144-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC554161FTL is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5 V ± 10 power supply. Advanced circuit technology provides both high spee | TOSHIBA 东芝 | | ||
262,144 WORD x 16 BIT STATIC RAM Description The TC554161FTL/TRL is a 4,194,304 bit CMOS static random access memory organized as 262,144 words by 16 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating current of 10mA/MHz (typ.) and a min | TOSHIBA 东芝 | | ||
262,144-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC554161FTL is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5 V ± 10 power supply. Advanced circuit technology provides both high spee | TOSHIBA 东芝 | | ||
262,144 WORD x 16 BIT STATIC RAM Description The TC554161FTL/TRL is a 4,194,304 bit CMOS static random access memory organized as 262,144 words by 16 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating current of 10mA/MHz (typ.) and a min | TOSHIBA 东芝 | | ||
262,144 WORD x 16 BIT STATIC RAM Description The TC554161FTL/TRL is a 4,194,304 bit CMOS static random access memory organized as 262,144 words by 16 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating current of 10mA/MHz (typ.) and a min | TOSHIBA 东芝 | | ||
262,144 WORD x 16 BIT STATIC RAM Description The TC554161FTL/TRL is a 4,194,304 bit CMOS static random access memory organized as 262,144 words by 16 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating current of 10mA/MHz (typ.) and a min | TOSHIBA 东芝 | | ||
262,144 WORD x 16 BIT STATIC RAM Description The TC554161FTL/TRL is a 4,194,304 bit CMOS static random access memory organized as 262,144 words by 16 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating current of 10mA/MHz (typ.) and a min | TOSHIBA 东芝 | | ||
262,144 WORD x 16 BIT STATIC RAM Description The TC554161FTL/TRL is a 4,194,304 bit CMOS static random access memory organized as 262,144 words by 16 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating current of 10mA/MHz (typ.) and a min | TOSHIBA 东芝 | | ||
262,144 WORD x 16 BIT STATIC RAM Description The TC554161FTL/TRL is a 4,194,304 bit CMOS static random access memory organized as 262,144 words by 16 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating current of 10mA/MHz (typ.) and a min | TOSHIBA 东芝 | | ||
262,144 WORD x 16 BIT STATIC RAM Description The TC554161FTL/TRL is a 4,194,304 bit CMOS static random access memory organized as 262,144 words by 16 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating current of 10mA/MHz (typ.) and a min | TOSHIBA 东芝 | | ||
262,144 WORD x 16 BIT STATIC RAM Description The TC554161FTL/TRL is a 4,194,304 bit CMOS static random access memory organized as 262,144 words by 16 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating current of 10mA/MHz (typ.) and a min | TOSHIBA 东芝 | | ||
16,384 WORD x 4 BIT CMOS STATIC RAM DESCRIPTION The TC55416P/J is a 65,536 bit high speed static random access memory organized as 16,384 words by 4 bits using CMOS technology, and operated from a single 5-volt supply. Toshiba's high performance device technology provides both high speed and low power features with a maximum acc | TOSHIBA 东芝 | | ||
16,384 WORD x 4 BIT CMOS STATIC RAM DESCRIPTION The TC55416P/J is a 65,536 bit high speed static random access memory organized as 16,384 words by 4 bits using CMOS technology, and operated from a single 5-volt supply. Toshiba's high performance device technology provides both high speed and low power features with a maximum acc | TOSHIBA 东芝 | | ||
16,384 WORD x 4 BIT CMOS STATIC RAM DESCRIPTION The TC55416P/J is a 65,536 bit high speed static random access memory organized as 16,384 words by 4 bits using CMOS technology, and operated from a single 5-volt supply. Toshiba's high performance device technology provides both high speed and low power features with a maximum acc | TOSHIBA 东芝 | | ||
16,384 WORD x 4 BIT CMOS STATIC RAM DESCRIPTION The TC55416P/J is a 65,536 bit high speed static random access memory organized as 16,384 words by 4 bits using CMOS technology, and operated from a single 5-volt supply. Toshiba's high performance device technology provides both high speed and low power features with a maximum acc | TOSHIBA 东芝 | | ||
16,384 WORD x 4 BIT CMOS STATIC RAM DESCRIPTION The TC55416P/J is a 65,536 bit high speed static random access memory organized as 16,384 words by 4 bits using CMOS technology, and operated from a single 5-volt supply. Toshiba's high performance device technology provides both high speed and low power features with a maximum acc | TOSHIBA 东芝 | | ||
16,384 WORD x 4 BIT CMOS STATIC RAM DESCRIPTION The TC55416P/J is a 65,536 bit high speed static random access memory organized as 16,384 words by 4 bits using CMOS technology, and operated from a single 5-volt supply. Toshiba's high performance device technology provides both high speed and low power features with a maximum acc | TOSHIBA 东芝 | | ||
16,384 WORD x 4 BIT CMOS STATIC RAM DESCRIPTION The TC55416P/J is a 65,536 bit high speed static random access memory organized as 16,384 words by 4 bits using CMOS technology, and operated from a single 5-volt supply. Toshiba's high performance device technology provides both high speed and low power features with a maximum acc | TOSHIBA 东芝 | | ||
16,384 WORD x 4 BIT CMOS STATIC RAM DESCRIPTION The TC55416P/J is a 65,536 bit high speed static random access memory organized as 16,384 words by 4 bits using CMOS technology, and operated from a single 5-volt supply. Toshiba's high performance device technology provides both high speed and low power features with a maximum acc | TOSHIBA 东芝 | | ||
262,144-WORD BY 16-BIT STATIC RAM 文件：150.58 Kbytes Page：10 Pages | TOSHIBA 东芝 | | ||
262,144-WORD BY 16-BIT STATIC RAM 文件：150.58 Kbytes Page：10 Pages | TOSHIBA 东芝 | | ||
262,144-WORD BY 16-BIT STATIC RAM 文件：150.58 Kbytes Page：10 Pages | TOSHIBA 东芝 | | ||
262,144-WORD BY 16-BIT STATIC RAM 文件：150.58 Kbytes Page：10 Pages | TOSHIBA 东芝 | | ||
262,144-WORD BY 16-BIT STATIC RAM 文件：150.58 Kbytes Page：10 Pages | TOSHIBA 东芝 | | ||
262,144-WORD BY 16-BIT STATIC RAM 文件：150.58 Kbytes Page：10 Pages | TOSHIBA 东芝 | | ||
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 文件：142.37 Kbytes Page：10 Pages | TOSHIBA 东芝 | | ||
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS | TOSHIBA 东芝 | | ||
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 文件：142.37 Kbytes Page：10 Pages | TOSHIBA 东芝 | | ||
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 文件：142.37 Kbytes Page：10 Pages | TOSHIBA 东芝 | | ||
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 文件：142.37 Kbytes Page：10 Pages | TOSHIBA 东芝 | | ||
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 文件：142.37 Kbytes Page：10 Pages | TOSHIBA 东芝 | | ||
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 文件：142.37 Kbytes Page：10 Pages | TOSHIBA 东芝 | | ||
262,144-WORD BY 16-BIT STATIC RAM 文件：418.04 Kbytes Page：9 Pages | TOSHIBA 东芝 | | ||
262,144-WORD BY 16-BIT STATIC RAM 文件：418.04 Kbytes Page：9 Pages | TOSHIBA 东芝 | | ||
262,144-WORD BY 16-BIT STATIC RAM 文件：418.04 Kbytes Page：9 Pages | TOSHIBA 东芝 | | ||
262,144-WORD BY 16-BIT STATIC RAM 文件：478.98 Kbytes Page：11 Pages | TOSHIBA 东芝 | | ||
262,144-WORD BY 16-BIT STATIC RAM | TOSHIBA 东芝 | | ||
262,144-WORD BY 16 BIT STATIC RAM | TOSHIBA 东芝 | | ||
262,144-WORD BY 16 BIT STATIC RAM 文件：420.87 Kbytes Page：9 Pages | TOSHIBA 东芝 | | ||
262,144-WORD BY 16-BIT STATIC RAM 文件：478.98 Kbytes Page：11 Pages | TOSHIBA 东芝 | | ||
262,144-WORD BY 16 BIT STATIC RAM 文件：420.87 Kbytes Page：9 Pages | TOSHIBA 东芝 | | ||
262,144-WORD BY 16-BIT STATIC RAM 文件：478.98 Kbytes Page：11 Pages | TOSHIBA 东芝 | | ||
262,144-WORD BY 16 BIT STATIC RAM 文件：420.87 Kbytes Page：9 Pages | TOSHIBA 东芝 | | ||
262,144-WORD BY 16-BIT STATIC RAM 文件：478.98 Kbytes Page：11 Pages | TOSHIBA 东芝 | |
TC55416产品属性
- 类型
描述
- 型号
TC55416
- 制造商
TOSHIBA
- 制造商全称
Toshiba Semiconductor
- 功能描述
262,144-WORD BY 16-BIT STATIC RAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOSH |
22+ |
原厂原封 |
8200 |
原装现货库存.价格优势 |
|||
TOSHIBA |
22+ |
TSOP |
3000 |
原装正品,支持实单 |
|||
TOSHIBA |
22+ |
TSOP54 |
20000 |
公司只做原装 品质保证 |
|||
TOSHIBA |
24+ |
TSOP |
65200 |
一级代理/放心采购 |
|||
TOSHIBA/东芝 |
20+ |
TSOP54 |
35830 |
原装优势主营型号-可开原型号增税票 |
|||
TOSHIBA |
20+ |
TSOP-54 |
2960 |
诚信交易大量库存现货 |
|||
25+ |
TSOP |
5000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
||||
TOSHIBA |
16+ |
TSOP54 |
6532 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
TOSHIBA |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
24+ |
400 |
本站库存 |
TC55416规格书下载地址
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DdatasheetPDF页码索引
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