位置：首页 > IC中文资料第5794页 > TC551001BPL
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
TC551001BPL | 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL is a 1,048,576-bit static random access memory (SRAM) organized as 131,072 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5 V ± 10 power supply. Advanced circuit technology provides b | TOSHIBA 东芝 |   | |
TC551001BPL | 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL is a 1,048,576-bit static random access memory (SRAM) organized as 131,072 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5 V ± 10 power supply. Advanced circuit technology provides b | TOSHIBA 东芝 | | |
TC551001BPL | SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM 文件：584.22 Kbytes Page：13 Pages | TOSHIBA 东芝 | | |
SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM 文件：584.22 Kbytes Page：13 Pages | TOSHIBA 东芝 | | ||
131,072 WORD x 8 BIT STATIC RAM 文件：588.48 Kbytes Page：14 Pages | TOSHIBA 东芝 | | ||
131,072 WORD x 8 BIT STATIC RAM 文件：547.34 Kbytes Page：14 Pages | TOSHIBA 东芝 | | ||
131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL is a 1,048,576-bit static random access memory (SRAM) organized as 131,072 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5 V ± 10 power supply. Advanced circuit technology provides b | TOSHIBA 东芝 | | ||
131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL is a 1,048,576-bit static random access memory (SRAM) organized as 131,072 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5 V ± 10 power supply. Advanced circuit technology provides b | TOSHIBA 东芝 | | ||
131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL is a 1,048,576-bit static random access memory (SRAM) organized as 131,072 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5 V ± 10 power supply. Advanced circuit technology provides b | TOSHIBA 东芝 | | ||
131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL is a 1,048,576-bit static random access memory (SRAM) organized as 131,072 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5 V ± 10 power supply. Advanced circuit technology provides b | TOSHIBA 东芝 | | ||
131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL is a 1,048,576-bit static random access memory (SRAM) organized as 131,072 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5 V ± 10 power supply. Advanced circuit technology provides b | TOSHIBA 东芝 | | ||
131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL is a 1,048,576-bit static random access memory (SRAM) organized as 131,072 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5 V ± 10 power supply. Advanced circuit technology provides b | TOSHIBA 东芝 | | ||
131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL is a 1,048,576-bit static random access memory (SRAM) organized as 131,072 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5 V ± 10 power supply. Advanced circuit technology provides b | TOSHIBA 东芝 | | ||
131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL is a 1,048,576-bit static random access memory (SRAM) organized as 131,072 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5 V ± 10 power supply. Advanced circuit technology provides b | TOSHIBA 东芝 | | ||
SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM 文件：584.22 Kbytes Page：13 Pages | TOSHIBA 东芝 | | ||
SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM 文件：584.22 Kbytes Page：13 Pages | TOSHIBA 东芝 | | ||
131,072 WORD x 8 BIT STATIC RAM Description The TC551001API is a 1,048,576 bit CMOS static random access memory organized as 131,072 words by 8 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating cur- rent of 5mA/MHz (typ.) and a minimum | TOSHIBA 东芝 | | ||
131,072 WORD x 8 BIT STATIC RAM Description The TC551001API is a 1,048,576 bit CMOS static random access memory organized as 131,072 words by 8 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating cur- rent of 5mA/MHz (typ.) and a minimum | TOSHIBA 东芝 | |
TC551001BPL产品属性
- 类型
描述
- 型号
TC551001BPL
- 制造商
TOSHIBA
- 制造商全称
Toshiba Semiconductor
- 功能描述
SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOSHIBA/东芝 |
24+ |
NA/ |
13057 |
原厂直销,现货供应,账期支持! |
|||
TOSHIBA |
2016+ |
DIP32 |
2500 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
TOSHIBA/东芝 |
25+ |
DIP32 |
54658 |
百分百原装现货 实单必成 |
|||
TOSHIBA/东芝 |
22+ |
DIP32 |
100000 |
代理渠道/只做原装/可含税 |
|||
TOSHIBA/东芝 |
24+ |
DIP32 |
880000 |
明嘉莱只做原装正品现货 |
|||
TOSHIBA |
24+ |
DIP32 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
TOSHIBA |
25+23+ |
DIP |
24174 |
绝对原装正品全新进口深圳现货 |
|||
TOSHIBA |
22+ |
DIP32 |
3000 |
原装正品,支持实单 |
|||
TOSHIBA/东芝 |
2025+ |
DIP |
5000 |
原装进口,免费送样品! |
|||
Toshiba |
25+ |
2 |
公司优势库存 热卖中!! |
TC551001BPL芯片相关品牌
TC551001BPL规格书下载地址
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DdatasheetPDF页码索引
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