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型号	功能描述	生产厂家企业	LOGO
TC518129AF	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518129AF-10	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518129AF-12	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518129AF-80	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518129AFL	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518129AFL	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129A-LV is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A-LV utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129A-LV operates fr	TOSHIBA 东芝	TOSHIBA
TC518129AFL-10	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518129AFL-10LV	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129A-LV is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A-LV utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129A-LV operates fr	TOSHIBA 东芝	TOSHIBA
TC518129AFL-12	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518129AFL-12LV	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129A-LV is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A-LV utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129A-LV operates fr	TOSHIBA 东芝	TOSHIBA
TC518129AFL-80	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518129AFL-80LV	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129A-LV is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A-LV utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129A-LV operates fr	TOSHIBA 东芝	TOSHIBA
TC518129AFTL	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518129AFTL	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129A-LV is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A-LV utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129A-LV operates fr	TOSHIBA 东芝	TOSHIBA
TC518129AFTL-10	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518129AFTL-10LV	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129A-LV is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A-LV utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129A-LV operates fr	TOSHIBA 东芝	TOSHIBA
TC518129AFTL-12	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518129AFTL-12LV	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129A-LV is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A-LV utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129A-LV operates fr	TOSHIBA 东芝	TOSHIBA
TC518129AFTL-80	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518129AFTL-80LV	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129A-LV is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A-LV utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129A-LV operates fr	TOSHIBA 东芝	TOSHIBA
TC518129AFW	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518129AFW-10	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518129AFW-12	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518129AFW-80	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518129AFWL	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518129AFWL	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129A-LV is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A-LV utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129A-LV operates fr	TOSHIBA 东芝	TOSHIBA
TC518129AFWL-10	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518129AFWL-10LV	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129A-LV is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A-LV utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129A-LV operates fr	TOSHIBA 东芝	TOSHIBA
TC518129AFWL-12	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518129AFWL-12LV	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129A-LV is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A-LV utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129A-LV operates fr	TOSHIBA 东芝	TOSHIBA
TC518129AFWL-80	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518129AFWL-80LV	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129A-LV is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A-LV utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129A-LV operates fr	TOSHIBA 东芝	TOSHIBA
TC518129AP	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518129AP-10	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518129AP-12	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518129AP-80	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518129APL	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129A-LV is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A-LV utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129A-LV operates fr	TOSHIBA 东芝	TOSHIBA
TC518129APL	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518129APL-10	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518129APL-10LV	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129A-LV is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A-LV utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129A-LV operates fr	TOSHIBA 东芝	TOSHIBA
TC518129APL-12	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518129APL-12LV	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129A-LV is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A-LV utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129A-LV operates fr	TOSHIBA 东芝	TOSHIBA
TC518129APL-80	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518129APL-80LV	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129A-LV is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A-LV utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129A-LV operates fr	TOSHIBA 东芝	TOSHIBA
TC518129ASP	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518129ASP-10	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518129ASP-12	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518129ASP-80	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518129ASPL	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518129ASPL-10	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518129ASPL-12	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518129ASPL-80	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129A is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129A operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518129BFL	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129B-V is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129B-V utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129B-V operates from	TOSHIBA 东芝	TOSHIBA
TC518129BFL	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129B is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129B utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129B operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518129BFL-10	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129B is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129B utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129B operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518129BFL-10L	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129B is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129B utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129B operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518129BFL-10V	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129B-V is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129B-V utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129B-V operates from	TOSHIBA 东芝	TOSHIBA
TC518129BFL-70	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129B is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129B utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129B operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518129BFL-70L	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129B is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129B utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129B operates from a sing	TOSHIBA 东芝	TOSHIBA
TC518129BFL-70V	131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129B-V is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129B-V utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518129B-V operates from	TOSHIBA 东芝	TOSHIBA

TC518129产品属性

类型
描述
型号
TC518129
制造商
TOSHIBA
功能描述
*

TC518129供应商更多...

更新时间：2025-12-31 23:01:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	TC518129AFWL-10	TOSHIBA/东芝	24+	NA/	4222	原厂直销,现货供应,账期支持!	询价
深圳市凌旭科技有限公司	TC518129AFWL-10	TOSHIBA	2016+	SOP32	9000	只做原装,假一罚十,公司可开17%增值税发票!	询价
上海意淼电子科技有限公司	TC518129CFWL-80	TOSHIBA	23+	SMD	20000	全新原装假一赔十	询价
深圳市威雅利发展有限公司	TC518129CFWL-10	TOSHIBA	9527+	SOP-32	780	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市恒达亿科技有限公司	TC518129CFWL-80	TOSHIBA	25+	SOP-32	4500	全新原装、诚信经营、公司现货销售!	询价
深圳市创新迹电子有限公司	TC518129CFWL-10	TOSHIBA	22+	SOP-32	20000	公司只做原装品质保证	询价
深圳市宏世佳电子科技有限公司	TC518129AFWL-10	TOSHIBA	2025+	SOP32	3720	全新原厂原装产品、公司现货销售	询价
深圳市胜彬电子有限公司	TC518129AFWL-80	TOSHIBA	22+	SOP32	3000	原装正品,支持实单	询价
深圳市羿芯诚电子有限公司	TC518129CFWL-80	TOSHIBA	24+	SMD	3000	全新原装现货优势库存	询价
深圳市昌和盛利电子有限公司	TC518129AFWL80	TOSHIBA	NEW	TSOP	9526	代理全系列销售,全新原装正品,价格优势,长期供应,量大可订	询价

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