型号 功能描述 生产厂家&企业 LOGO 操作

262,144WORDx4BITDYNAMICRAM

DESCRIPTION TheTC514256AP/AJ/AZisthenewgenerationdynamicRAMorganized262,144wordsby4bits. TheTC514256AP/AJ/AZutilizesTOSHIBA'sCMOSSilicongateprocesstechnologyaswellasadvanced circuittechniquestoprovidewideoperatingmargins,bothinternallyandtothesystemuser. M

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

262,144WORDx4BITDYNAMICRAM

DESCRIPTION TheTC514256AP/AJ/AZisthenewgenerationdynamicRAMorganized262,144wordsby4bits. TheTC514256AP/AJ/AZutilizesTOSHIBA'sCMOSSilicongateprocesstechnologyaswellasadvanced circuittechniquestoprovidewideoperatingmargins,bothinternallyandtothesystemuser. M

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

262,144WORDx4BITDYNAMICRAM

DESCRIPTION TheTC514256AP/AJ/AZisthenewgenerationdynamicRAMorganized262,144wordsby4bits. TheTC514256AP/AJ/AZutilizesTOSHIBA'sCMOSSilicongateprocesstechnologyaswellasadvanced circuittechniquestoprovidewideoperatingmargins,bothinternallyandtothesystemuser. M

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

262,144WORDx4BITDYNAMICRAM

DESCRIPTION TheTC514256AP/AJ/AZisthenewgenerationdynamicRAMorganized262,144wordsby4bits. TheTC514256AP/AJ/AZutilizesTOSHIBA'sCMOSSilicongateprocesstechnologyaswellasadvanced circuittechniquestoprovidewideoperatingmargins,bothinternallyandtothesystemuser. M

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

262,144WORDx4BITDYNAMICRAM

DESCRIPTION TheTC514256AP/AJ/AZisthenewgenerationdynamicRAMorganized262,144wordsby4bits. TheTC514256AP/AJ/AZutilizesTOSHIBA'sCMOSSilicongateprocesstechnologyaswellasadvanced circuittechniquestoprovidewideoperatingmargins,bothinternallyandtothesystemuser. M

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

262,144WORDx4BITDYNAMICRAM

DESCRIPTION TheTC514256AP/AJ/AZisthenewgenerationdynamicRAMorganized262,144wordsby4bits. TheTC514256AP/AJ/AZutilizesTOSHIBA'sCMOSSilicongateprocesstechnologyaswellasadvanced circuittechniquestoprovidewideoperatingmargins,bothinternallyandtothesystemuser. M

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

262,144WORDx4BITDYNAMICRAM

DESCRIPTION TheTC514256AP/AJ/AZisthenewgenerationdynamicRAMorganized262,144wordsby4bits. TheTC514256AP/AJ/AZutilizesTOSHIBA'sCMOSSilicongateprocesstechnologyaswellasadvanced circuittechniquestoprovidewideoperatingmargins,bothinternallyandtothesystemuser. M

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

262,144WORDx4BITDYNAMICRAM

DESCRIPTION TheTC514256AP/AJ/AZisthenewgenerationdynamicRAMorganized262,144wordsby4bits. TheTC514256AP/AJ/AZutilizesTOSHIBA'sCMOSSilicongateprocesstechnologyaswellasadvanced circuittechniquestoprovidewideoperatingmargins,bothinternallyandtothesystemuser. M

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

262,144WORDx4BITDYNAMICRAM

DESCRIPTION TheTC514256AP/AJ/AZisthenewgenerationdynamicRAMorganized262,144wordsby4bits. TheTC514256AP/AJ/AZutilizesTOSHIBA'sCMOSSilicongateprocesstechnologyaswellasadvanced circuittechniquestoprovidewideoperatingmargins,bothinternallyandtothesystemuser. M

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

262,144WORDx4BITDYNAMICRAM

DESCRIPTION TheTC514256AP/AJ/AZisthenewgenerationdynamicRAMorganized262,144wordsby4bits. TheTC514256AP/AJ/AZutilizesTOSHIBA'sCMOSSilicongateprocesstechnologyaswellasadvanced circuittechniquestoprovidewideoperatingmargins,bothinternallyandtothesystemuser. M

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

262,144WORDx4BITDYNAMICRAM

DESCRIPTION TheTC514256AP/AJ/AZisthenewgenerationdynamicRAMorganized262,144wordsby4bits. TheTC514256AP/AJ/AZutilizesTOSHIBA'sCMOSSilicongateprocesstechnologyaswellasadvanced circuittechniquestoprovidewideoperatingmargins,bothinternallyandtothesystemuser. M

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

262,144WORDx4BITDYNAMICRAM

DESCRIPTION TheTC514256AP/AJ/AZisthenewgenerationdynamicRAMorganized262,144wordsby4bits. TheTC514256AP/AJ/AZutilizesTOSHIBA'sCMOSSilicongateprocesstechnologyaswellasadvanced circuittechniquestoprovidewideoperatingmargins,bothinternallyandtothesystemuser. M

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

262,144WORDSX4BITDYNAMICRAM

DESCRIPTION TheTCs142s6P/J/ZisthenewgenerationdynamicRAMorganized262,144wordsby4 bit.TheTCs142s6P/J/ZutilizesTOSHIBA'sCMOSSilicongateprocesstechnologyaswell asadvancedcircuittechniquestoprovidewideoperatingmargins,bothinternallyandto thesystemuser.Multip

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

262,144WORDSX4BITDYNAMICRAM

DESCRIPTION TheTCs142s6P/J/ZisthenewgenerationdynamicRAMorganized262,144wordsby4 bit.TheTCs142s6P/J/ZutilizesTOSHIBA'sCMOSSilicongateprocesstechnologyaswell asadvancedcircuittechniquestoprovidewideoperatingmargins,bothinternallyandto thesystemuser.Multip

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

262,144WORDSX4BITDYNAMICRAM

DESCRIPTION TheTCs142s6P/J/ZisthenewgenerationdynamicRAMorganized262,144wordsby4 bit.TheTCs142s6P/J/ZutilizesTOSHIBA'sCMOSSilicongateprocesstechnologyaswell asadvancedcircuittechniquestoprovidewideoperatingmargins,bothinternallyandto thesystemuser.Multip

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

262,144WORDSX4BITDYNAMICRAM

DESCRIPTION TheTCs142s6P/J/ZisthenewgenerationdynamicRAMorganized262,144wordsby4 bit.TheTCs142s6P/J/ZutilizesTOSHIBA'sCMOSSilicongateprocesstechnologyaswell asadvancedcircuittechniquestoprovidewideoperatingmargins,bothinternallyandto thesystemuser.Multip

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

262,144WORDSX4BITDYNAMICRAM

DESCRIPTION TheTCs142s6P/J/ZisthenewgenerationdynamicRAMorganized262,144wordsby4 bit.TheTCs142s6P/J/ZutilizesTOSHIBA'sCMOSSilicongateprocesstechnologyaswell asadvancedcircuittechniquestoprovidewideoperatingmargins,bothinternallyandto thesystemuser.Multip

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

262,144WORDSX4BITDYNAMICRAM

DESCRIPTION TheTCs142s6P/J/ZisthenewgenerationdynamicRAMorganized262,144wordsby4 bit.TheTCs142s6P/J/ZutilizesTOSHIBA'sCMOSSilicongateprocesstechnologyaswell asadvancedcircuittechniquestoprovidewideoperatingmargins,bothinternallyandto thesystemuser.Multip

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

262,144WORDSX4BITDYNAMICRAM

DESCRIPTION TheTCs142s6P/J/ZisthenewgenerationdynamicRAMorganized262,144wordsby4 bit.TheTCs142s6P/J/ZutilizesTOSHIBA'sCMOSSilicongateprocesstechnologyaswell asadvancedcircuittechniquestoprovidewideoperatingmargins,bothinternallyandto thesystemuser.Multip

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

262,144WORDSX4BITDYNAMICRAM

DESCRIPTION TheTCs142s6P/J/ZisthenewgenerationdynamicRAMorganized262,144wordsby4 bit.TheTCs142s6P/J/ZutilizesTOSHIBA'sCMOSSilicongateprocesstechnologyaswell asadvancedcircuittechniquestoprovidewideoperatingmargins,bothinternallyandto thesystemuser.Multip

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

262,144WORDSX4BITDYNAMICRAM

DESCRIPTION TheTCs142s6P/J/ZisthenewgenerationdynamicRAMorganized262,144wordsby4 bit.TheTCs142s6P/J/ZutilizesTOSHIBA'sCMOSSilicongateprocesstechnologyaswell asadvancedcircuittechniquestoprovidewideoperatingmargins,bothinternallyandto thesystemuser.Multip

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

262,144WORDSX4BITDYNAMICRAM

DESCRIPTION TheTCs142s6P/J/ZisthenewgenerationdynamicRAMorganized262,144wordsby4 bit.TheTCs142s6P/J/ZutilizesTOSHIBA'sCMOSSilicongateprocesstechnologyaswell asadvancedcircuittechniquestoprovidewideoperatingmargins,bothinternallyandto thesystemuser.Multip

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

262,144WORDSX4BITDYNAMICRAM

DESCRIPTION TheTCs142s6P/J/ZisthenewgenerationdynamicRAMorganized262,144wordsby4 bit.TheTCs142s6P/J/ZutilizesTOSHIBA'sCMOSSilicongateprocesstechnologyaswell asadvancedcircuittechniquestoprovidewideoperatingmargins,bothinternallyandto thesystemuser.Multip

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

262,144WORDSX4BITDYNAMICRAM

DESCRIPTION TheTCs142s6P/J/ZisthenewgenerationdynamicRAMorganized262,144wordsby4 bit.TheTCs142s6P/J/ZutilizesTOSHIBA'sCMOSSilicongateprocesstechnologyaswell asadvancedcircuittechniquestoprovidewideoperatingmargins,bothinternallyandto thesystemuser.Multip

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

256Kx4-BitDynamicRAMLowPower256Kx4-BitDynamicRAM

TheHYB514256B/BJ/BL/BJListhenewgenerationdynamicRAMorganizedas262144wordsby4-bit.TheHYB514256B/BJ/BL/BJLutilizesCMOSsilicongateprocesstechnologyaswellasadvancedcircuittechniquestoprovidewideoperatingmargins,bothinternallyandforthesystemuser.Multiplexedad

SIEMENSSiemens Semiconductor Group

西门子德国西门子股份公司

SIEMENS

262,144-Wordx4-BitDYNAMICRAM:FASTPAGEMODETYPE

DESCRIPTION TheMSM514256C/CLisa262,144-wordx4-bitdynamicRAMfabricatedinOkissilicon-gateCMOStechnology.TheMSM514256C/CLachieveshighintegration,high-speedoperation,andlow-powerconsumptionbecauseOkimanufacturesthedeviceinaquadruple-layerpolysilicon/single-layermetal

OKIOki Electric Cable Co.,Ltd

冲电线冲电线株式会社

OKI

CMOS256Kx4bitDynamicRAM

[NipponSteelSemiCorp] FastPageModeCMOS256kx4bitDynamicRAM

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

ETC1

CMOS256Kx4bitDynamicRAM

[NipponSteelSemiCorp] FastPageModeCMOS256kx4bitDynamicRAM

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

ETC1

TC514256产品属性

  • 类型

    描述

  • 型号

    TC514256

  • 制造商

    Toshiba America Electronic Components

  • 功能描述

    Dynamic RAM, Fast Page, 256K x 4, 20 Pin, Plastic, DIP

更新时间:2025-7-14 17:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ZIP19
23+
NA
15659
振宏微专业只做正品,假一罚百!
TOS
20+
ZIP19
35830
原装优势主营型号-可开原型号增税票
TOSHIBA/东芝
23+
ZIP19
9800
全新原装现货,假一赔十
TOSHIBA
24+
DIP
6868
原装现货,可开13%税票
Toshiba
23
公司优势库存 热卖中!!
TOSHIBA
9314+
ZIP19
26
普通
TOSHIBA/东芝
24+
NA/
4050
原厂直销,现货供应,账期支持!
TOS
22+
ZIP-19
8200
原装现货库存.价格优势
TOSHIBA/东芝
22+
ZIP19
25000
只做原装,一站式BOM配单,假一罚十
TOSHIBA
38
全新原装 货期两周

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