4,194,304 WORD X 4 BIT DYNAMIC RAM

Description The TC5116400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bit. The TC5116400BSJ/BST utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Mu

4,194,304 WORD X 4 BIT DYNAMIC RAM

Description The TC5116400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bit. The TC5116400BSJ/BST utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Mu

4,194,304 WORD X 4 BIT DYNAMIC RAM

Description The TC5116400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bit. The TC5116400BSJ/BST utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Mu

4,194,304 - WORD X 4-BIT DYNAMIC RAM

Description The Hitachi HM5116400 Series, HM5117400 Series are CMOS dynamic RAMs organized 4,194,304-word x 4-bit. They employ the most advanced 0.5 m CMOS technology for high performance and low power. The HM5116400 Series, HM5117400 Series offer Fast Page Mode as a high speed access mode. They

4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION The MSM5116400B is a 4,194,304-word x 4-bit dynamic RAM fabricated in Okis silicon-gate CMOS technology. The MSM5116400B achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal C

4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION The MSM5116400C is a 4,194,304-word x 4-bit dynamic RAM fabricated in Okis silicon-gate CMOS technology. The MSM5116400C achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal C

4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

DESCRIPTION The MSM5116400D is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM5116400D achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal