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TC51价格

参考价格：￥22.2264

型号：TC510COG 品牌：Microchip 备注：这里有TC51多少钱，2025年最近7天走势，今日出价，今日竞价，TC51批发/采购报价，TC51行情走势销售排行榜，TC51报价。

型号	功能描述	生产厂家企业	LOGO
TC51	1關A Voltage Detector with Output Delay General Description The TC51 is a very low power, open drain output, CMOS voltage detector with built-in delay. It is particularly well-suited for battery powered applications because of its extremely low 1µA operating current and small surface-mount packaging. Each part is lasertrimmed to the de	Microchip 微芯科技	Microchip
TC51	Axial Leaded Aluminum Electrolytic Capacitors 85 ºC, High Ripple, General Purpose Capacitor Type TC is an axial leaded, 85 ºC, 1000 hour long life general purpose aluminum electrolytic capacitor with a high ripple current rating and is suitable for consumer electronic equipment applications. Highlights • General purpose • High ripple curr	CDE	CDE
TC51	1UA Voltage Detector with Output Delay General Description The TC51 is a very low power, open drain output, CMOS voltage detector with built-in delay. It is particularly well-suited for battery powered applications because of its extremely low 1µA operating current and small surface-mount packaging. Each part is lasertrimmed to the de	Microchip 微芯科技	Microchip
TC51	1A Voltage Detector with Output Delay 文件：449.93 Kbytes Page：14 Pages	Microchip 微芯科技	Microchip
TC51	封装/外壳：轴向，CAN 包装：散装描述：CAP ALUM 8UF 250V AXIAL 电容器铝电解电容器	CDE	CDE
TC51	1uA Voltage detector with Output Delay	Microchip 微芯科技	Microchip
TC510	PRECISION ANALOG FRONT ENDS GENERAL DESCRIPTION The TC500/500A/510/514 family are precision analog front ends that implement dual slope A/D converters having a maximum resolution of 17 bits plus sign. As a minimum, each device contains the integrator, zero crossing comparator and processor interface logic. The TC500 is the	TELCOM	TELCOM
TC510	Precision Analog Front Ends GENERAL DESCRIPTION The TC500/500A/510/514 family are precision analog front ends that implement dual slope A/D converters having a maximum resolution of 17 bits plus sign. As a minimum, each device contains the integrator, zero crossing comparator and processor interface logic. The TC500 is th	Microchip 微芯科技	Microchip
TC510COG	PRECISION ANALOG FRONT ENDS GENERAL DESCRIPTION The TC500/500A/510/514 family are precision analog front ends that implement dual slope A/D converters having a maximum resolution of 17 bits plus sign. As a minimum, each device contains the integrator, zero crossing comparator and processor interface logic. The TC500 is the	TELCOM	TELCOM
TC510COG	Precision Analog Front Ends GENERAL DESCRIPTION The TC500/500A/510/514 family are precision analog front ends that implement dual slope A/D converters having a maximum resolution of 17 bits plus sign. As a minimum, each device contains the integrator, zero crossing comparator and processor interface logic. The TC500 is th	Microchip 微芯科技	Microchip
TC510CPF	PRECISION ANALOG FRONT ENDS GENERAL DESCRIPTION The TC500/500A/510/514 family are precision analog front ends that implement dual slope A/D converters having a maximum resolution of 17 bits plus sign. As a minimum, each device contains the integrator, zero crossing comparator and processor interface logic. The TC500 is the	TELCOM	TELCOM
TC510CPF	Precision Analog Front Ends GENERAL DESCRIPTION The TC500/500A/510/514 family are precision analog front ends that implement dual slope A/D converters having a maximum resolution of 17 bits plus sign. As a minimum, each device contains the integrator, zero crossing comparator and processor interface logic. The TC500 is th	Microchip 微芯科技	Microchip
TC511000J	SILICON GATE CMOS DESCRIPTION The TC511000P/J/Z is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511000P/J/Z utilizes TOSHIBA's CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Mult	TOSHIBA 东芝	TOSHIBA
TC511000J-10	SILICON GATE CMOS DESCRIPTION The TC511000P/J/Z is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511000P/J/Z utilizes TOSHIBA's CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Mult	TOSHIBA 东芝	TOSHIBA
TC511000J-12	SILICON GATE CMOS DESCRIPTION The TC511000P/J/Z is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511000P/J/Z utilizes TOSHIBA's CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Mult	TOSHIBA 东芝	TOSHIBA
TC511000J-85	SILICON GATE CMOS DESCRIPTION The TC511000P/J/Z is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511000P/J/Z utilizes TOSHIBA's CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Mult	TOSHIBA 东芝	TOSHIBA
TC511000P	SILICON GATE CMOS DESCRIPTION The TC511000P/J/Z is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511000P/J/Z utilizes TOSHIBA's CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Mult	TOSHIBA 东芝	TOSHIBA
TC511000P-10	SILICON GATE CMOS DESCRIPTION The TC511000P/J/Z is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511000P/J/Z utilizes TOSHIBA's CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Mult	TOSHIBA 东芝	TOSHIBA
TC511000P-12	SILICON GATE CMOS DESCRIPTION The TC511000P/J/Z is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511000P/J/Z utilizes TOSHIBA's CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Mult	TOSHIBA 东芝	TOSHIBA
TC511000P-85	SILICON GATE CMOS DESCRIPTION The TC511000P/J/Z is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511000P/J/Z utilizes TOSHIBA's CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Mult	TOSHIBA 东芝	TOSHIBA
TC511000Z	SILICON GATE CMOS DESCRIPTION The TC511000P/J/Z is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511000P/J/Z utilizes TOSHIBA's CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Mult	TOSHIBA 东芝	TOSHIBA
TC511000Z-10	SILICON GATE CMOS DESCRIPTION The TC511000P/J/Z is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511000P/J/Z utilizes TOSHIBA's CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Mult	TOSHIBA 东芝	TOSHIBA
TC511000Z-12	SILICON GATE CMOS DESCRIPTION The TC511000P/J/Z is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511000P/J/Z utilizes TOSHIBA's CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Mult	TOSHIBA 东芝	TOSHIBA
TC511000Z-85	SILICON GATE CMOS DESCRIPTION The TC511000P/J/Z is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511000P/J/Z utilizes TOSHIBA's CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Mult	TOSHIBA 东芝	TOSHIBA
TC511001AJ	TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION The TC511001AP/AJ/AZ is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511001AP/AJ/AZ utilizes TOSHIBA's CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user.	TOSHIBA 东芝	TOSHIBA
TC511001AJ-10	TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION The TC511001AP/AJ/AZ is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511001AP/AJ/AZ utilizes TOSHIBA's CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user.	TOSHIBA 东芝	TOSHIBA
TC511001AJ-70	TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION The TC511001AP/AJ/AZ is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511001AP/AJ/AZ utilizes TOSHIBA's CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user.	TOSHIBA 东芝	TOSHIBA
TC511001AJ-80	TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION The TC511001AP/AJ/AZ is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511001AP/AJ/AZ utilizes TOSHIBA's CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user.	TOSHIBA 东芝	TOSHIBA
TC511001AP	TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION The TC511001AP/AJ/AZ is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511001AP/AJ/AZ utilizes TOSHIBA's CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user.	TOSHIBA 东芝	TOSHIBA
TC511001AP-10	TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION The TC511001AP/AJ/AZ is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511001AP/AJ/AZ utilizes TOSHIBA's CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user.	TOSHIBA 东芝	TOSHIBA
TC511001AP-70	TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION The TC511001AP/AJ/AZ is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511001AP/AJ/AZ utilizes TOSHIBA's CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user.	TOSHIBA 东芝	TOSHIBA
TC511001AP-80	TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION The TC511001AP/AJ/AZ is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511001AP/AJ/AZ utilizes TOSHIBA's CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user.	TOSHIBA 东芝	TOSHIBA
TC511001AZ	TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION The TC511001AP/AJ/AZ is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511001AP/AJ/AZ utilizes TOSHIBA's CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user.	TOSHIBA 东芝	TOSHIBA
TC511001AZ-10	TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION The TC511001AP/AJ/AZ is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511001AP/AJ/AZ utilizes TOSHIBA's CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user.	TOSHIBA 东芝	TOSHIBA
TC511001AZ-70	TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION The TC511001AP/AJ/AZ is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511001AP/AJ/AZ utilizes TOSHIBA's CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user.	TOSHIBA 东芝	TOSHIBA
TC511001AZ-80	TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION The TC511001AP/AJ/AZ is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511001AP/AJ/AZ utilizes TOSHIBA's CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user.	TOSHIBA 东芝	TOSHIBA
TC511001J	TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION The TC511001P/J/Z is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511001P/J/Z utilizes TOSHIBA's CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Mult	TOSHIBA 东芝	TOSHIBA
TC511001J-10	TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION The TC511001P/J/Z is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511001P/J/Z utilizes TOSHIBA's CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Mult	TOSHIBA 东芝	TOSHIBA
TC511001J-12	TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION The TC511001P/J/Z is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511001P/J/Z utilizes TOSHIBA's CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Mult	TOSHIBA 东芝	TOSHIBA
TC511001J-85	TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION The TC511001P/J/Z is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511001P/J/Z utilizes TOSHIBA's CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Mult	TOSHIBA 东芝	TOSHIBA
TC511001P	TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION The TC511001P/J/Z is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511001P/J/Z utilizes TOSHIBA's CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Mult	TOSHIBA 东芝	TOSHIBA
TC511001P-10	TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION The TC511001P/J/Z is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511001P/J/Z utilizes TOSHIBA's CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Mult	TOSHIBA 东芝	TOSHIBA
TC511001P-12	TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION The TC511001P/J/Z is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511001P/J/Z utilizes TOSHIBA's CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Mult	TOSHIBA 东芝	TOSHIBA
TC511001P-85	TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION The TC511001P/J/Z is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511001P/J/Z utilizes TOSHIBA's CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Mult	TOSHIBA 东芝	TOSHIBA
TC511001Z	TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION The TC511001P/J/Z is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511001P/J/Z utilizes TOSHIBA's CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Mult	TOSHIBA 东芝	TOSHIBA
TC511001Z-10	TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION The TC511001P/J/Z is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511001P/J/Z utilizes TOSHIBA's CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Mult	TOSHIBA 东芝	TOSHIBA
TC511001Z-12	TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION The TC511001P/J/Z is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511001P/J/Z utilizes TOSHIBA's CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Mult	TOSHIBA 东芝	TOSHIBA
TC511001Z-85	TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION The TC511001P/J/Z is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511001P/J/Z utilizes TOSHIBA's CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Mult	TOSHIBA 东芝	TOSHIBA
TC511002J	TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION The TC511002P/J/Z is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511002 P/J/Z utilizes TOSHIBA's CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Mul	TOSHIBA 东芝	TOSHIBA
TC511002J-10	TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION The TC511002P/J/Z is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511002 P/J/Z utilizes TOSHIBA's CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Mul	TOSHIBA 东芝	TOSHIBA
TC511002J-12	TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION The TC511002P/J/Z is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511002 P/J/Z utilizes TOSHIBA's CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Mul	TOSHIBA 东芝	TOSHIBA
TC511002J-85	TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION The TC511002P/J/Z is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511002 P/J/Z utilizes TOSHIBA's CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Mul	TOSHIBA 东芝	TOSHIBA
TC511002P	TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION The TC511002P/J/Z is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511002 P/J/Z utilizes TOSHIBA's CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Mul	TOSHIBA 东芝	TOSHIBA
TC511002P-10	TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION The TC511002P/J/Z is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511002 P/J/Z utilizes TOSHIBA's CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Mul	TOSHIBA 东芝	TOSHIBA
TC511002P-12	TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION The TC511002P/J/Z is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511002 P/J/Z utilizes TOSHIBA's CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Mul	TOSHIBA 东芝	TOSHIBA
TC511002P-85	TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION The TC511002P/J/Z is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511002 P/J/Z utilizes TOSHIBA's CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Mul	TOSHIBA 东芝	TOSHIBA
TC511002Z	TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION The TC511002P/J/Z is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511002 P/J/Z utilizes TOSHIBA's CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Mul	TOSHIBA 东芝	TOSHIBA
TC511002Z-10	TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION The TC511002P/J/Z is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511002 P/J/Z utilizes TOSHIBA's CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Mul	TOSHIBA 东芝	TOSHIBA
TC511002Z-12	TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION The TC511002P/J/Z is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511002 P/J/Z utilizes TOSHIBA's CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Mul	TOSHIBA 东芝	TOSHIBA
TC511002Z-85	TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION The TC511002P/J/Z is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511002 P/J/Z utilizes TOSHIBA's CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Mul	TOSHIBA 东芝	TOSHIBA

TC51产品属性

类型
描述
型号
TC51
功能描述
铝质电解电容器 - 带引线 8uF 250Volts
RoHS
否
制造商
Kemet
电容
220 uF
容差
20 %
电压额定值
25 V
端接类型
Radial
外壳直径
8 mm
外壳长度
11 mm
引线间隔
5 mm
产品
General Purpose Electrolytic Capacitors
封装
Bulk

TC51供应商更多...

更新时间：2025-11-18 23:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	TC514CPJ	MICROCHIP(美国微芯)	24+	PDIP28	917	只做原装,提供一站式配单服务,代工代料。BOM配单	询价
深圳市得捷芯城科技有限公司	TC510COG	MROCHIP/微芯	24+	NA/	3264	原装现货,当天可交货,原型号开票	询价
深圳市凌旭科技有限公司	TC5118160BJ-60	TOSHIBA	2016+	SOJ42	9000	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市金芯世纪电子有限公司	TC510COG	MICROCHIP/微芯	22+	SOP	100000	代理渠道/只做原装/可含税	询价
中天科工半导体（深圳）有限公司	TC51N3002ECBTR	MICROCHIP/微芯	25+	SOT23	40584	MICROCHIP/微芯全新特价TC51N3002ECBTR即刻询购立享优惠#长期有货	询价
标准国际(香港)有限公司	TC51001APL-10	Toshiba	25+		86	公司优势库存热卖中!!	询价
千层芯半导体(深圳)有限公司	TC510COG	MicrochipTechnology	24+	原厂原装	6000	进口原装正品假一赔十,货期7-10天	询价
深圳市冠亿通科技有限公司	TC510COG	Microchip	25+		25000	原厂原包深圳现货主打品牌假一赔百可开票!	询价
深圳市昌和盛利电子有限公司	TC51YHM716BXGN75	TOS原装正品专卖价格	NEW	BGA	21978	全新原装正品,价格优势,长期供应,量大可订	询价
深圳市正纳电子有限公司	TC510COG	Microchip(微芯)	23+	NA	20094	正纳10年以上分销经验原装进口正品做服务做口碑有支持	询价

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