位置：首页 > IC中文资料第4126页 > TC51
TC51价格
参考价格：￥22.2264
型号：TC510COG 品牌：Microchip 备注：这里有TC51多少钱，2024年最近7天走势，今日出价，今日竞价，TC51批发/采购报价，TC51行情走势销售排行榜，TC51报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
TC51 | 1關A Voltage Detector with Output Delay GeneralDescription TheTC51isaverylowpower,opendrainoutput,CMOSvoltagedetectorwithbuilt-indelay.Itisparticularlywell-suitedforbatterypoweredapplicationsbecauseofitsextremelylow1µAoperatingcurrentandsmallsurface-mountpackaging.Eachpartislasertrimmedtothede | MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司 |  |   |
TC51 | Axial Leaded Aluminum Electrolytic Capacitors 85ºC,HighRipple,GeneralPurposeCapacitor TypeTCisanaxialleaded,85ºC,1000hourlonglifegeneralpurposealuminumelectrolyticcapacitorwithahighripplecurrentratingandissuitableforconsumerelectronicequipmentapplications. Highlights •Generalpurpose •Highripplecurr | CDE Cornell Dubilier Electronics |  | |
TC51 | 1UA Voltage Detector with Output Delay GeneralDescription TheTC51isaverylowpower,opendrainoutput,CMOSvoltagedetectorwithbuilt-indelay.Itisparticularlywell-suitedforbatterypoweredapplicationsbecauseofitsextremelylow1µAoperatingcurrentandsmallsurface-mountpackaging.Eachpartislasertrimmedtothede | MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司 | | |
TC51 | 1A Voltage Detector with Output Delay 文件：449.93 Kbytes Page：14 Pages | MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司 | | |
TC51 | 封装/外壳：轴向，CAN 包装：散装 描述：CAP ALUM 8UF 250V AXIAL 电容器 铝电解电容器 | CDE Cornell Dubilier Electronics | | |
PRECISION ANALOG FRONT ENDS GENERALDESCRIPTION TheTC500/500A/510/514familyareprecisionanalogfrontendsthatimplementdualslopeA/Dconvertershavingamaximumresolutionof17bitsplussign.Asaminimum,eachdevicecontainstheintegrator,zerocrossingcomparatorandprocessorinterfacelogic.TheTC500isthe | TELCOM TELCOM |  | | |
Precision Analog Front Ends GENERALDESCRIPTION TheTC500/500A/510/514familyareprecisionanalogfrontendsthatimplementdualslopeA/Dconvertershavingamaximumresolutionof17bitsplussign.Asaminimum,eachdevicecontainstheintegrator,zerocrossingcomparatorandprocessorinterfacelogic.TheTC500isth | MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司 | | | |
PRECISION ANALOG FRONT ENDS GENERALDESCRIPTION TheTC500/500A/510/514familyareprecisionanalogfrontendsthatimplementdualslopeA/Dconvertershavingamaximumresolutionof17bitsplussign.Asaminimum,eachdevicecontainstheintegrator,zerocrossingcomparatorandprocessorinterfacelogic.TheTC500isthe | TELCOM TELCOM | | | |
Precision Analog Front Ends GENERALDESCRIPTION TheTC500/500A/510/514familyareprecisionanalogfrontendsthatimplementdualslopeA/Dconvertershavingamaximumresolutionof17bitsplussign.Asaminimum,eachdevicecontainstheintegrator,zerocrossingcomparatorandprocessorinterfacelogic.TheTC500isth | MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司 | | | |
PRECISION ANALOG FRONT ENDS GENERALDESCRIPTION TheTC500/500A/510/514familyareprecisionanalogfrontendsthatimplementdualslopeA/Dconvertershavingamaximumresolutionof17bitsplussign.Asaminimum,eachdevicecontainstheintegrator,zerocrossingcomparatorandprocessorinterfacelogic.TheTC500isthe | TELCOM TELCOM | | | |
Precision Analog Front Ends GENERALDESCRIPTION TheTC500/500A/510/514familyareprecisionanalogfrontendsthatimplementdualslopeA/Dconvertershavingamaximumresolutionof17bitsplussign.Asaminimum,eachdevicecontainstheintegrator,zerocrossingcomparatorandprocessorinterfacelogic.TheTC500isth | MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司 | | | |
SILICON GATE CMOS DESCRIPTION TheTC511000P/J/Zisthenewgenerationdynamic RAMorganized1,048,576wordsby1bit.The TC511000P/J/ZutilizesTOSHIBA'sCMOSSilicongate processtechnologyaswellasadvancedcircuittechniques toprovidewideoperatingmargins,bothinternallyandto thesystemuser.Mult | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 |  | | |
SILICON GATE CMOS DESCRIPTION TheTC511000P/J/Zisthenewgenerationdynamic RAMorganized1,048,576wordsby1bit.The TC511000P/J/ZutilizesTOSHIBA'sCMOSSilicongate processtechnologyaswellasadvancedcircuittechniques toprovidewideoperatingmargins,bothinternallyandto thesystemuser.Mult | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
SILICON GATE CMOS DESCRIPTION TheTC511000P/J/Zisthenewgenerationdynamic RAMorganized1,048,576wordsby1bit.The TC511000P/J/ZutilizesTOSHIBA'sCMOSSilicongate processtechnologyaswellasadvancedcircuittechniques toprovidewideoperatingmargins,bothinternallyandto thesystemuser.Mult | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
SILICON GATE CMOS DESCRIPTION TheTC511000P/J/Zisthenewgenerationdynamic RAMorganized1,048,576wordsby1bit.The TC511000P/J/ZutilizesTOSHIBA'sCMOSSilicongate processtechnologyaswellasadvancedcircuittechniques toprovidewideoperatingmargins,bothinternallyandto thesystemuser.Mult | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
SILICON GATE CMOS DESCRIPTION TheTC511000P/J/Zisthenewgenerationdynamic RAMorganized1,048,576wordsby1bit.The TC511000P/J/ZutilizesTOSHIBA'sCMOSSilicongate processtechnologyaswellasadvancedcircuittechniques toprovidewideoperatingmargins,bothinternallyandto thesystemuser.Mult | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
SILICON GATE CMOS DESCRIPTION TheTC511000P/J/Zisthenewgenerationdynamic RAMorganized1,048,576wordsby1bit.The TC511000P/J/ZutilizesTOSHIBA'sCMOSSilicongate processtechnologyaswellasadvancedcircuittechniques toprovidewideoperatingmargins,bothinternallyandto thesystemuser.Mult | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
SILICON GATE CMOS DESCRIPTION TheTC511000P/J/Zisthenewgenerationdynamic RAMorganized1,048,576wordsby1bit.The TC511000P/J/ZutilizesTOSHIBA'sCMOSSilicongate processtechnologyaswellasadvancedcircuittechniques toprovidewideoperatingmargins,bothinternallyandto thesystemuser.Mult | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
SILICON GATE CMOS DESCRIPTION TheTC511000P/J/Zisthenewgenerationdynamic RAMorganized1,048,576wordsby1bit.The TC511000P/J/ZutilizesTOSHIBA'sCMOSSilicongate processtechnologyaswellasadvancedcircuittechniques toprovidewideoperatingmargins,bothinternallyandto thesystemuser.Mult | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
SILICON GATE CMOS DESCRIPTION TheTC511000P/J/Zisthenewgenerationdynamic RAMorganized1,048,576wordsby1bit.The TC511000P/J/ZutilizesTOSHIBA'sCMOSSilicongate processtechnologyaswellasadvancedcircuittechniques toprovidewideoperatingmargins,bothinternallyandto thesystemuser.Mult | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
SILICON GATE CMOS DESCRIPTION TheTC511000P/J/Zisthenewgenerationdynamic RAMorganized1,048,576wordsby1bit.The TC511000P/J/ZutilizesTOSHIBA'sCMOSSilicongate processtechnologyaswellasadvancedcircuittechniques toprovidewideoperatingmargins,bothinternallyandto thesystemuser.Mult | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
SILICON GATE CMOS DESCRIPTION TheTC511000P/J/Zisthenewgenerationdynamic RAMorganized1,048,576wordsby1bit.The TC511000P/J/ZutilizesTOSHIBA'sCMOSSilicongate processtechnologyaswellasadvancedcircuittechniques toprovidewideoperatingmargins,bothinternallyandto thesystemuser.Mult | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
SILICON GATE CMOS DESCRIPTION TheTC511000P/J/Zisthenewgenerationdynamic RAMorganized1,048,576wordsby1bit.The TC511000P/J/ZutilizesTOSHIBA'sCMOSSilicongate processtechnologyaswellasadvancedcircuittechniques toprovidewideoperatingmargins,bothinternallyandto thesystemuser.Mult | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION TheTC511001AP/AJ/AZisthenewgenerationdynamicRAMorganized1,048,576wordsby 1bit.TheTC511001AP/AJ/AZutilizesTOSHIBA'sCMOSSilicongateprocesstechnologyas wellasadvancedcircuittechniquestoprovidewideoperatingmargins,bothinternally andtothesystemuser. | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION TheTC511001AP/AJ/AZisthenewgenerationdynamicRAMorganized1,048,576wordsby 1bit.TheTC511001AP/AJ/AZutilizesTOSHIBA'sCMOSSilicongateprocesstechnologyas wellasadvancedcircuittechniquestoprovidewideoperatingmargins,bothinternally andtothesystemuser. | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION TheTC511001AP/AJ/AZisthenewgenerationdynamicRAMorganized1,048,576wordsby 1bit.TheTC511001AP/AJ/AZutilizesTOSHIBA'sCMOSSilicongateprocesstechnologyas wellasadvancedcircuittechniquestoprovidewideoperatingmargins,bothinternally andtothesystemuser. | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION TheTC511001AP/AJ/AZisthenewgenerationdynamicRAMorganized1,048,576wordsby 1bit.TheTC511001AP/AJ/AZutilizesTOSHIBA'sCMOSSilicongateprocesstechnologyas wellasadvancedcircuittechniquestoprovidewideoperatingmargins,bothinternally andtothesystemuser. | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION TheTC511001AP/AJ/AZisthenewgenerationdynamicRAMorganized1,048,576wordsby 1bit.TheTC511001AP/AJ/AZutilizesTOSHIBA'sCMOSSilicongateprocesstechnologyas wellasadvancedcircuittechniquestoprovidewideoperatingmargins,bothinternally andtothesystemuser. | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION TheTC511001AP/AJ/AZisthenewgenerationdynamicRAMorganized1,048,576wordsby 1bit.TheTC511001AP/AJ/AZutilizesTOSHIBA'sCMOSSilicongateprocesstechnologyas wellasadvancedcircuittechniquestoprovidewideoperatingmargins,bothinternally andtothesystemuser. | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION TheTC511001AP/AJ/AZisthenewgenerationdynamicRAMorganized1,048,576wordsby 1bit.TheTC511001AP/AJ/AZutilizesTOSHIBA'sCMOSSilicongateprocesstechnologyas wellasadvancedcircuittechniquestoprovidewideoperatingmargins,bothinternally andtothesystemuser. | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION TheTC511001AP/AJ/AZisthenewgenerationdynamicRAMorganized1,048,576wordsby 1bit.TheTC511001AP/AJ/AZutilizesTOSHIBA'sCMOSSilicongateprocesstechnologyas wellasadvancedcircuittechniquestoprovidewideoperatingmargins,bothinternally andtothesystemuser. | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION TheTC511001AP/AJ/AZisthenewgenerationdynamicRAMorganized1,048,576wordsby 1bit.TheTC511001AP/AJ/AZutilizesTOSHIBA'sCMOSSilicongateprocesstechnologyas wellasadvancedcircuittechniquestoprovidewideoperatingmargins,bothinternally andtothesystemuser. | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION TheTC511001AP/AJ/AZisthenewgenerationdynamicRAMorganized1,048,576wordsby 1bit.TheTC511001AP/AJ/AZutilizesTOSHIBA'sCMOSSilicongateprocesstechnologyas wellasadvancedcircuittechniquestoprovidewideoperatingmargins,bothinternally andtothesystemuser. | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION TheTC511001AP/AJ/AZisthenewgenerationdynamicRAMorganized1,048,576wordsby 1bit.TheTC511001AP/AJ/AZutilizesTOSHIBA'sCMOSSilicongateprocesstechnologyas wellasadvancedcircuittechniquestoprovidewideoperatingmargins,bothinternally andtothesystemuser. | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION TheTC511001AP/AJ/AZisthenewgenerationdynamicRAMorganized1,048,576wordsby 1bit.TheTC511001AP/AJ/AZutilizesTOSHIBA'sCMOSSilicongateprocesstechnologyas wellasadvancedcircuittechniquestoprovidewideoperatingmargins,bothinternally andtothesystemuser. | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION TheTC511001P/J/Zisthenewgenerationdynamic RAMorganized1,048,576wordsby1bit.The TC511001P/J/ZutilizesTOSHIBA'sCMOSSilicongate processtechnologyaswellasadvancedcircuittechniques toprovidewideoperatingmargins,bothinternallyand tothesystemuser.Mult | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION TheTC511001P/J/Zisthenewgenerationdynamic RAMorganized1,048,576wordsby1bit.The TC511001P/J/ZutilizesTOSHIBA'sCMOSSilicongate processtechnologyaswellasadvancedcircuittechniques toprovidewideoperatingmargins,bothinternallyand tothesystemuser.Mult | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION TheTC511001P/J/Zisthenewgenerationdynamic RAMorganized1,048,576wordsby1bit.The TC511001P/J/ZutilizesTOSHIBA'sCMOSSilicongate processtechnologyaswellasadvancedcircuittechniques toprovidewideoperatingmargins,bothinternallyand tothesystemuser.Mult | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION TheTC511001P/J/Zisthenewgenerationdynamic RAMorganized1,048,576wordsby1bit.The TC511001P/J/ZutilizesTOSHIBA'sCMOSSilicongate processtechnologyaswellasadvancedcircuittechniques toprovidewideoperatingmargins,bothinternallyand tothesystemuser.Mult | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION TheTC511001P/J/Zisthenewgenerationdynamic RAMorganized1,048,576wordsby1bit.The TC511001P/J/ZutilizesTOSHIBA'sCMOSSilicongate processtechnologyaswellasadvancedcircuittechniques toprovidewideoperatingmargins,bothinternallyand tothesystemuser.Mult | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION TheTC511001P/J/Zisthenewgenerationdynamic RAMorganized1,048,576wordsby1bit.The TC511001P/J/ZutilizesTOSHIBA'sCMOSSilicongate processtechnologyaswellasadvancedcircuittechniques toprovidewideoperatingmargins,bothinternallyand tothesystemuser.Mult | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION TheTC511001P/J/Zisthenewgenerationdynamic RAMorganized1,048,576wordsby1bit.The TC511001P/J/ZutilizesTOSHIBA'sCMOSSilicongate processtechnologyaswellasadvancedcircuittechniques toprovidewideoperatingmargins,bothinternallyand tothesystemuser.Mult | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION TheTC511001P/J/Zisthenewgenerationdynamic RAMorganized1,048,576wordsby1bit.The TC511001P/J/ZutilizesTOSHIBA'sCMOSSilicongate processtechnologyaswellasadvancedcircuittechniques toprovidewideoperatingmargins,bothinternallyand tothesystemuser.Mult | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION TheTC511001P/J/Zisthenewgenerationdynamic RAMorganized1,048,576wordsby1bit.The TC511001P/J/ZutilizesTOSHIBA'sCMOSSilicongate processtechnologyaswellasadvancedcircuittechniques toprovidewideoperatingmargins,bothinternallyand tothesystemuser.Mult | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION TheTC511001P/J/Zisthenewgenerationdynamic RAMorganized1,048,576wordsby1bit.The TC511001P/J/ZutilizesTOSHIBA'sCMOSSilicongate processtechnologyaswellasadvancedcircuittechniques toprovidewideoperatingmargins,bothinternallyand tothesystemuser.Mult | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION TheTC511001P/J/Zisthenewgenerationdynamic RAMorganized1,048,576wordsby1bit.The TC511001P/J/ZutilizesTOSHIBA'sCMOSSilicongate processtechnologyaswellasadvancedcircuittechniques toprovidewideoperatingmargins,bothinternallyand tothesystemuser.Mult | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION TheTC511001P/J/Zisthenewgenerationdynamic RAMorganized1,048,576wordsby1bit.The TC511001P/J/ZutilizesTOSHIBA'sCMOSSilicongate processtechnologyaswellasadvancedcircuittechniques toprovidewideoperatingmargins,bothinternallyand tothesystemuser.Mult | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION TheTC511002P/J/Zisthenewgenerationdynamic RAMorganized1,048,576wordsby1bit.TheTC511002 P/J/ZutilizesTOSHIBA'sCMOSSilicongateprocess technologyaswellasadvancedcircuittechniquesto providewideoperatingmargins,bothinternallyandto thesystemuser.Mul | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION TheTC511002P/J/Zisthenewgenerationdynamic RAMorganized1,048,576wordsby1bit.TheTC511002 P/J/ZutilizesTOSHIBA'sCMOSSilicongateprocess technologyaswellasadvancedcircuittechniquesto providewideoperatingmargins,bothinternallyandto thesystemuser.Mul | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION TheTC511002P/J/Zisthenewgenerationdynamic RAMorganized1,048,576wordsby1bit.TheTC511002 P/J/ZutilizesTOSHIBA'sCMOSSilicongateprocess technologyaswellasadvancedcircuittechniquesto providewideoperatingmargins,bothinternallyandto thesystemuser.Mul | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION TheTC511002P/J/Zisthenewgenerationdynamic RAMorganized1,048,576wordsby1bit.TheTC511002 P/J/ZutilizesTOSHIBA'sCMOSSilicongateprocess technologyaswellasadvancedcircuittechniquesto providewideoperatingmargins,bothinternallyandto thesystemuser.Mul | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION TheTC511002P/J/Zisthenewgenerationdynamic RAMorganized1,048,576wordsby1bit.TheTC511002 P/J/ZutilizesTOSHIBA'sCMOSSilicongateprocess technologyaswellasadvancedcircuittechniquesto providewideoperatingmargins,bothinternallyandto thesystemuser.Mul | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION TheTC511002P/J/Zisthenewgenerationdynamic RAMorganized1,048,576wordsby1bit.TheTC511002 P/J/ZutilizesTOSHIBA'sCMOSSilicongateprocess technologyaswellasadvancedcircuittechniquesto providewideoperatingmargins,bothinternallyandto thesystemuser.Mul | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION TheTC511002P/J/Zisthenewgenerationdynamic RAMorganized1,048,576wordsby1bit.TheTC511002 P/J/ZutilizesTOSHIBA'sCMOSSilicongateprocess technologyaswellasadvancedcircuittechniquesto providewideoperatingmargins,bothinternallyandto thesystemuser.Mul | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION TheTC511002P/J/Zisthenewgenerationdynamic RAMorganized1,048,576wordsby1bit.TheTC511002 P/J/ZutilizesTOSHIBA'sCMOSSilicongateprocess technologyaswellasadvancedcircuittechniquesto providewideoperatingmargins,bothinternallyandto thesystemuser.Mul | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION TheTC511002P/J/Zisthenewgenerationdynamic RAMorganized1,048,576wordsby1bit.TheTC511002 P/J/ZutilizesTOSHIBA'sCMOSSilicongateprocess technologyaswellasadvancedcircuittechniquesto providewideoperatingmargins,bothinternallyandto thesystemuser.Mul | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION TheTC511002P/J/Zisthenewgenerationdynamic RAMorganized1,048,576wordsby1bit.TheTC511002 P/J/ZutilizesTOSHIBA'sCMOSSilicongateprocess technologyaswellasadvancedcircuittechniquesto providewideoperatingmargins,bothinternallyandto thesystemuser.Mul | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION TheTC511002P/J/Zisthenewgenerationdynamic RAMorganized1,048,576wordsby1bit.TheTC511002 P/J/ZutilizesTOSHIBA'sCMOSSilicongateprocess technologyaswellasadvancedcircuittechniquesto providewideoperatingmargins,bothinternallyandto thesystemuser.Mul | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
TOSHIBA MOS MEMORY PRODUCTS DESCRIPTION TheTC511002P/J/Zisthenewgenerationdynamic RAMorganized1,048,576wordsby1bit.TheTC511002 P/J/ZutilizesTOSHIBA'sCMOSSilicongateprocess technologyaswellasadvancedcircuittechniquesto providewideoperatingmargins,bothinternallyandto thesystemuser.Mul | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
32,768 WORD x 16 BIT CMOS PSEUDO STATIC RAM Description TheTC511632FL/FTLisa512KbithighspeedCMOSpseudostaticRAMorganizedas32,768wordsby16bits.The TC511632FL/FTL,utilizesaonetransistordynamicmemorycellwithCMOSperipheralcircuitrytoprovidehighcapacity,high speedandlowpowerstorage.TheTC511632FL/FTLop | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | |
TC51产品属性
- 类型
描述
- 型号
TC51
- 功能描述
铝质电解电容器 - 带引线 8uF 250Volts
- RoHS
否
- 制造商
Kemet
- 电容
220 uF
- 容差
20 %
- 电压额定值
25 V
- 端接类型
Radial
- 外壳直径
8 mm
- 外壳长度
11 mm
- 引线间隔
5 mm
- 产品
General Purpose Electrolytic Capacitors
- 封装
Bulk
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOS原装正品专卖价格 |
23+ |
BGA |
9526 |
专注原装正品现货特价中量大可定 |
|||
MICROCHIP(美国微芯) |
23+ |
SOIC-24 |
9990 |
原装正品，支持实单 |
|||
MICROCHIP(美国微芯) |
2021+ |
SOIC-24 |
499 |
||||
TOSHIBA |
22+ |
SOP |
6310 |
全新原装现货,欢迎询购!! |
|||
Microchip |
2021+ |
258000 |
科研单位合格供应商!常备大量现货库存 |
||||
MICROCHIP |
17+ |
sopdip |
6200 |
100%原装正品现货 |
|||
Microchip |
21+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
TELASIC |
16+ |
BGA |
1052 |
进口原装现货/价格优势! |
|||
TOSHIBA |
2016+ |
SOJ42 |
9000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
MICROCHIP(美国微芯) |
23+ |
PDIP28 |
917 |
只做原装,提供一站式配单服务,代工代料。BOM配单 |
TC51芯片相关品牌
TC51规格书下载地址
TC51参数引脚图相关
- tm7705
- tl7705
- tl494
- tl431
- tip127
- tip122
- td手机
- tda8844
- tda8361
- tda8023tt
- tda7294
- tda6101
- tda2822m
- tda2822
- tda2030功放电路图
- tda2030功放电路
- tda2030a
- tda2030
- tda2003功放电路图
- tda16846
- TC54VC2102ECB713
- TC54VC1402EZB
- TC54VC1402ECB713
- TC54_11
- TC54_07
- TC54_04
- TC-54.000MBD-T
- TC54
- TC5356
- TC5347A
- TC5345A
- TC5344AX
- TC5344A
- TC534
- TC533
- TC53257
- TC530
- TC53
- TC52A
- TC5299J
- TC5285C
- TC5282C
- TC520ACPD
- TC520ACOE
- TC520A
- TC520
- TC52_15
- TC52_13
- TC51V
- TC51N2702ECBTR
- TC514CPJ
- TC514COI713
- TC514COI
- TC5142
- TC5141
- TC514
- TC5124B
- TC5124
- TC510COG
- TC510
- TC50XA
- TC50X
- TC-50U
- TC50PNN-MC-85HZ
- TC-50N
- TC50L5I32K7680
- TC50A-P
- TC50A4V
- TC50A
- TC5090
- TC5088S
- TC5088
- TC5081
- TC5072P
- TC5071P
- TC5070P
- TC5070
- TC50500
- TC5043P
- TC504
- TC5036
- TC50300
- TC503
- TC5027
- TC5022
- TC50200
- TC50100A
- TC500CPE
- TC500COE713
- TC500COE
- TC500ACPE
- TC500ACOE
- TC-50.000MBD-T
- TC-5
- TC4W66FUTE12LF
- TC4W66FU
- TC4W66F
- TC4W53FUTE12LF
- TC4W53FU
- TC4W53F
TC51数据表相关新闻
TC51N2702ECBTR
TC51N2702ECBTR
2023-2-9TC58DVG3S0ETA00
TC58DVG3S0ETA00
2021-6-22TC4452VPA
TC4452VPA,全新.当天发货0755-82732291当天发货或门市自取.企鹅：一七五五二三二五七五/企鹅：一一五七六一一五八五，威:八七六八零五五八.
2021-5-31TC4452VOA
TC4452VOA,全新.当天发货0755-82732291当天发货或门市自取.企鹅：一七五五二三二五七五/企鹅：一一五七六一一五八五，威:八七六八零五五八.
2021-5-31TC58CVG2S0HRAIJ
原装现货
2020-10-15TC4432EOA
SOIC-8门驱动器,6A门驱动器,SOIC-16SMD/SMT门驱动器,PDIP-20门驱动器,2OutputMOSFETGateDrivers2Driver门驱动器,SOT-23-5SMD/SMT1Driver门驱动器
2020-7-29
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
