5/16 TIN-CAN DIODES

FEATURES 25 Ampere Operation At TL=125℃ With No Thermal Runaway. Low forward voltage drop Low leakage current High surge current capability

336- × 244-pixel ccd image sensor

336- 횞 244-pixel ccd image sensor

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Axial Leaded Aluminum Electrolytic Capacitors

85 ºC, High Ripple, General Purpose Capacitor Type TC is an axial leaded, 85 ºC, 1000 hour long life general purpose aluminum electrolytic capacitor with a high ripple current rating and is suitable for consumer electronic equipment applications. Highlights • General purpose • High ripple curr

封装/外壳：轴向，CAN 包装：散装 描述：CAP ALUM 5000UF 25V AXIAL 电容器 铝电解电容器

336- 횞 244-pixel ccd image sensor

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PIXEL CCD IMAGE SENSOR

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PIXEL CCD IMAGE SENSOR

文件：350.72 Kbytes Page：18 Pages

PIXEL CCD IMAGE SENSOR

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PNP video transistors

DESCRIPTION PNP video transistor in a SOT128B (TO-202) plastic package. NPN complements: BFQ235 and BFQ235A. FEATURES • High breakdown voltages • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability.

MEDIUM CURRENT PLASTIC RECTIFIER(VOLTAGE - 200 to 1300 Volts CURRENT - 3.0 Amperes)

FEATURES ● Exce High surge current capability ● Plastic package has Underwriters Laboratory Flammability Classification 94V-O ● Low leakage ● Void-free molded in DO-201AD plastic package ● High current operation of 3 Amperes at TA=95 ¢J with no thermal runaway ● eds environmental standards o

N-CHANNEL BROADBAND RF POWER FET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode Designed for broadband commercial and industrial applications at frequencies to 54 MHz. The high gain, broadband performance and linear characterization of this device makes it ideal for large–signal, common source a

RF Power Field-Effect Transistor

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode

Silicon NPN Transistor Horizontal Driver, Amp

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